11/11/2010
IRF6201PbF
HEXFET® Power MOSFET
PD - 97500A
Applications
• OR-ing or hot-swap MOSFET
• Battery operated DC motor inverter MOSFET
• System/Load switch
Features and Benefits
Note
Form Quantit
y
IRF6201PbF SO8 Tube/Bulk 95
IRF6201TRPbF SO8 Ta
p
e and Reel 4000
Orderable part number Package Type Standard Pack
6
6
6
*
'
'
'
'
SO-8
Absolute Maximum Ratin
g
s
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 4.5V
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 4.5V
I
DM
Pulsed Drain Current
c
P
D
@T
A
= 25°C Power Dissipation
e
P
D
@T
A
= 70°C Power Dissipation
e
Linear Derating Factor W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
V
A
W
°C
Max.
27
22
110
±12
20
-55 to + 150
2.5
0.02
1.6
www.irf.com 1
V
DS
20 V
R
DS(on) max
(@V
GS
= 4.5V)
2.45 mΩ
R
DS(on) max
(@V
GS
= 2.5V)
2.75 mΩ
Q
g (typical)
130 nC
I
D
(@T
A
= 25°C)
27 A
Features Benefits
Low R
DSon
(≤ 2.45mΩ @ V
g
s = 4.5V)Lower conduction losses
Industry-standard SO-8 packa
g
e Multi-vendor compatibility
RoHS compliant containing no lead, no bromide and no halogen Environmentally Friendly
results in
⇒
IRF6201PbF
2
S
D
G
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
Rθ is measured at TJ approximately 90°C.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 20 ––– ––– V
∆ΒV
DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 4.6 ––– mV/°C
R
DS(on)
––– 1.90 2.45
––– 2.10 2.75
V
GS(th)
Gate Threshold Voltage 0.5 ––– 1.1 V V
DS
= V
GS
, I
D
= 100µA
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
Q
g
Total Gate Charge ––– 130 195
Q
gs
Gate-to-Source Charge ––– 16 –––
Q
gd
Gate-to-Drain Charge ––– 60 –––
t
d(on)
Turn-On Delay Time ––– 29 –––
t
r
Rise Time ––– 100 –––
t
d(off)
Turn-Off Delay Time ––– 320 –––
t
f
Fall Time ––– 265 –––
C
iss
Input Capacitance ––– 8555 –––
C
oss
Output Capacitance ––– 1735 –––
C
rss
Reverse Transfer Capacitance ––– 1290 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
c
V
SD
Diode Forward Voltage ––– ––– 1.2 V
t
rr
Reverse Recovery Time ––– 82 120 ns
Q
rr
Reverse Recovery Charge ––– 180 270 nC
Thermal Resistance
Parameter Units
R
θJL
Junction-to-Drain Lead
f
R
θJA
Junction-to-Ambient
e
Typ.
–––
––– °C/W
Max.
20
50
Static Drain-to-Source On-Resistance
A
––– –––
––– –––
2.5
110
nA
nC
ns
pF
R
G
= 6.8Ω
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
DD
= 20V, V
GS
= 4.5V
I
D
= 1.0A
V
DS
= 10V
V
GS
= 12V
V
GS
= -12V
V
GS
= 4.5V
mΩ
µA
T
J
= 25°C, I
F
= 2.5A, V
DD
= 16V
di/dt = 100/µs
d
T
J
= 25°C, I
S
= 2.5A, V
GS
= 0V
d
showing the
integral reverse
p-n junction diode.
MOSFET symbol
I
D
= 22A
V
DS
= 16V, V
GS
= 0V
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 4.5V, I
D
= 27A
d
V
GS
= 2.5V, I
D
= 22A
d
Conditions
See Figs. 10a & 10b
ƒ = 1.0MHz
V
GS
= 0V
V
DS
= 16V
IRF6201PbF
www.irf.com
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance
vs. Temperature
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 10V
4.5V
3.5V
2.5V
2.0V
1.8V
1.5V
BOTTOM 1.3V
≤60µs PULSE WIDTH
Tj = 25°C
1.3V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
1.3V
≤60µs PULSE WIDTH
Tj = 150°C
VGS
TOP 10V
4.5V
3.5V
2.5V
2.0V
1.8V
1.5V
BOTTOM 1.3V
0123
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 150°C
VDS = 10V
≤60µs PULSE WIDTH
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 27A
VGS = 4.5V
IRF6201PbF
4
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating AreaFig 7. Typical Source-Drain Diode
Forward Voltage
110 100
VDS, Drain-to-Source Voltage (V)
1000
10000
100000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD, Source-to-Drain Voltage (V)
1.0
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 150°C
VGS = 0V
0 0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
TA = 25°C
Tj = 150°C
Single Pulse
100µsec
1msec
10msec
DC
0 50 100 150 200 250 300
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VGS, Gate-to-Source Voltage (V)
VDS= 16V
VDS= 10V
ID= 22A
IRF6201PbF
www.irf.com
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
25 50 75 100 125 150
TC , Case Temperature (°C)
0
5
10
15
20
25
30
ID, Drain Current (A)
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
1E-006 1E-005 0.0001 0.001 0.01 0.1 110 100 1000
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
100
Thermal Response ( Z thJA ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + TA
IRF6201PbF
6
Fig 13. Typical On-Resistance vs. Drain
Current
Fig 12. Typical On-Resistance vs. Gate
Voltage
Fig 14b. Gate Charge Test Circuit
Fig 14a. Basic Gate Charge Waveform
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12345678910 11 12
VGS, Gate -to -Source Voltage (V)
1
2
3
4
5
RDS(on), Drain-to -Source On Resistance (mΩ)
ID = 27A
TJ = 25°C
TJ = 125°C
050 100 150 200
ID, Drain Current (A)
1.0
1.5
2.0
2.5
3.0
RDS(on), Drain-to -Source On Resistance (mΩ)
Vgs = 2.5V
Vgs = 4.5V
Q
G
Q
GS
Q
GD
V
G
Charge
VGS
IRF6201PbF
www.irf.com
Fig 15. Typical Threshold Voltage vs.
Junction Temperature
Fig 16. Typical Power vs. Time
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS(th), Gate threshold Voltage (V)
ID = 100µA
1E-08 1E-07 1E-06 1E-05 1E-04 1E-03
Time (sec)
0
10000
20000
30000
40000
50000
60000
70000
80000
90000
Power (W)
IRF6201PbF
8
SO-8 Package Outline (Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
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IRF6201PbF
www.irf.com
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 11/10
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
 Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
 Applicable version of JEDEC standard at the time of product release.
MSL1
(p
er JEDEC J-STD-020D
†††
RoHS Compliant
Moisture Sensitivity Level SO-8
Yes
Qualification Information
†
Qualification level Consumer
††
(per JEDEC JESD47F
†††
guidelines)