© Semiconductor Components Industries, LLC, 2012
August, 2012 − Rev. 4
1Publication Order Number:
2N5401/D
2N5401
Amplifier Transistors
PNP Silicon
Features
•These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage VCEO 150 Vdc
Collector − Base Voltage VCBO 160 Vdc
Emitter − Base Voltage VEBO 5.0 Vdc
Collector Current − Continuous IC600 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W
Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
123
12
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO−92
CASE 29
STYLE 1
MARKING DIAGRAM
2N
5401
AYWW G
G
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
(Note: Microdot may be in either location)
2N5401
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO 150 −
Vdc
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO 160
−
Vdc
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO 5.0 −
Vdc
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
ICBO
−
−
50
50
nAdc
mAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
−50
nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 5.0 Vdc)
hFE 50
60
50
−
240
−
−
Collector−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
−
−
0.2
0.5
Vdc
Base−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
−
−
1.0
1.0
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT100 300
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
−6.0
pF
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe 40 200
−
Noise Figure
(IC = 250 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)
NF
−8.0
dB
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
ORDERING INFORMATION
Device Package Shipping†
2N5401G TO−92
(Pb−Free)
5000 Unit / Bulk
2N5401RLRAG TO−92
(Pb−Free)
2000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
2N5401
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3
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
30
100
150
200
0.1
h , CURRENT GAIN
0.5 2.0 3.0 100.2 0.3
20
1.0 5.0
FE
TJ = 125°C
25°C
-55°C
70
50
20 30 50 100
VCE = -1.0 V
VCE = -5.0 V
Figure 2. Collector Saturation Region
IB, BASE CURRENT (mA)
1.0
0.1 0.5 2.0 100.2 1.0 5.0 20 50
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.005 0.01 0.02 0.05
Figure 3. Collector Cut−Off Region
VBE, BASE-EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
, COLLECTOR CURRENT (A)μIC
103
0.10.3 0.2
102
101
100
10-1
10-2
10-3
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
IC = 1.0 mA 10 mA 30 mA 100 mA
VCE = 30 V
IC = ICES
TJ = 125°C
75°C
25°C
REVERSE FORWARD
Figure 4. “On” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.7
1.0
0.2
V, VOLTAGE (VOLTS)
0
TJ = 25°C
VCE(sat) @ IC/IB = 10
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
0.9
0.8
0.5
0.3
0.1
VBE(sat) @ IC/IB = 10
0.3 3.0 30
2N5401
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4
Figure 5. Temperature Coefficients Figure 6. Switching Time Test Circuit
IC, COLLECTOR CURRENT (mA)
2.5
C, CAPACITANCE (pF)
100
TJ = 25°C
Cibo
Figure 7. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
V, TEMPERATURE COEFFICIENT (mV/ C)°θ
Figure 8. Turn−On Time
10.2 V
Vin
10 ms
INPUT PULSE
VBB
+8.8 V
100
RB
5.1 k
0.25 mF
Vin 100 1N914
Vout
RC
VCC
-30 V
3.0 k
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
Values Shown are for IC @ 10 mA
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 1000.3 3.0 30
2.0
1.5
1.0
0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
TJ = -55°C to 135°C
qVC for VCE(sat)
qVB for VBE(sat)
Cobo
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
0.2 0.5 1.0 2.0 5.0 10 200.3 3.0
0.7 7.0
t, TIME (ns)
1000
100
200
300
500
700
10
20
30
50
70
0.2 0.5 1.0 2.0 5.0 10 200.3 3.0 30 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 9. Turn−Off Time
IC/IB = 10
TJ = 25°C
td @ VBE(off) = 1.0 V
VCC = 120 V
tr @ VCC = 30 V
tr @ VCC = 120 V
t, TIME (ns)
2000
100
200
300
500
700
20
30
50
70
0.2 0.5 1.0 2.0 5.0 10 200.3 3.0 30 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 10. Safe Operating Area
1000 tf @ VCC = 120 V
tf @ VCC = 30 V
ts @ VCC = 120 V
IC/IB = 10
TJ = 25°C
1000
100
1.0
1.0 10 100 1000
VCE, COLLECTOR EMITTER VOLTAGE (V)
Single Pulse Test
at TA = 25°C
100 ms
1 ms
10 ms
0.1 ms
1 s
10
IC, COLLECTOR CURRENT (mA)
2N5401
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5
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X−X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 --- 12.70 ---
L0.250 --- 6.35 ---
N0.080 0.105 2.04 2.66
P--- 0.100 --- 2.54
R0.115 --- 2.93 ---
V0.135 --- 3.43 ---
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION:
MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN
P AND BEYOND DIMENSION K MINIMUM.
RA
P
J
B
K
G
SECTION X−X
C
V
D
N
XX
SEATING
PLANE DIM MIN MAX
MILLIMETERS
A4.45 5.20
B4.32 5.33
C3.18 4.19
D0.40 0.54
G2.40 2.80
J0.39 0.50
K12.70 ---
N2.04 2.66
P1.50 4.00
R2.93 ---
V3.43 ---
1
T
STRAIGHT LEAD
BULK PACK
BENT LEAD
TAPE & REEL
AMMO PACK
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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2N5401/D
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