8.5 Volt Temperature Compensated Zener
Reference Diodes
SCOTTSDALE DIVISION
1N4775 thru 1N4784A
WWW.Microsemi .COM 1N4775 – 1N4784A 4775 – 1N4784A
DESCRIPTION APPEARANCE
The 1N4775 thru 1N4784A series of Zero-TC Reference Diodes provides a
selection of 8.5 V nominal voltages and temperature coefficients to as low
as 0.0005%/oC for minimal voltage change with temperature when operated
at 7.5 mA. Options for screening similar to JAN, JANTX, JANTXV, and
JANS also exist by using MQ, MX, MV or MSP respectively for part number
prefixes and high reliability screening. Microsemi also offers numerous
other Zener Reference Diode products for a variety of other voltages from
6.2 V to 200 V
DO-7
(DO-204AA)
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES APPLICATIONS / BENEFITS
JEDEC registered 1N4775 thru 1N4784A series
Standard reference voltage of 8.5 V +/- 5%
Internal metallurgical bonds
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers. For example,
designate “MX1N4779A” for a JANTX, or
MV1N4784A for a JANTXV screen.
Radiation Hardened devices available by changing
the “1N” prefix to “RH”, e.g. RH4779A, RH4784A,
etc. Also consult factory for “RH” data sheet
brochure for other radiation hardened reference
diode products.
Provides minimal voltage changes over a broad
temperature range for instrumentation and other
circuit designs requiring a voltage reference
Temperature coefficient selections available from
0.01%/ºC to 0.0005%/ºC
Tight voltage tolerances available by adding
tolerance 1%, 2%, 3%, etc. after part number for
further identification, e.g. 1N4773A-2%, 1N4774A-
1%, 1N4769-3%, 1N4769A-1%, etc.
Flexible axial-leaded mounting terminals
Nonsensitive to ESD per MIL-STD-750 Method 1020
MAXIMUM RATINGS MECHANICAL AND PACKAGING
Operating & StorageTemperature: -65oC to +175oC
DC Power Dissipation: 250 mW @ TL = 25oC
NOTE: For optimum voltage-temperature stability,
the test current IZT = 0.5 or 1.0 mA as shown in
Electrical Characteristics (less than 10 mW in
dissipated power)
Solder temperatures: 260 oC for 10 s (maximum)
CASE: Hermetically sealed glass case with DO-7
(DO-204AA) package
TERMINALS: Tin-lead plated and solderable per
MIL-STD-750, Method 2026
MARKING: Part number and cathode band
POLARITY: Reference diode to be operated with
the banded end positive with respect to the
opposite end
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
WEIGHT: 0.2 grams.
See package dimensions on last page
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright 2003
8-19-2003 REV A
8.5 Volt Temperature Compensated Zener
Reference Diodes
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright 2003
8-19-2003 REV A
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N4775 thru 1N4784A
1N4775 – 1N4784A
*ELECTRICAL CHARACTERISTICS @ 25oC, unless otherwise specified
ZENER
VOLTAGE
(Note 5)
ZENER
TEST
CURRENT
MAXIMUM
DYNAMIC
IMPEDANCE
MAXIMUM
REVERSE
CURRENT
IR @ 6 V
MAXIMUM
VOLTAGE
TEMPERATURE
STABILITY
(Note 3 & 5)
TEMPERATURE
RANGE
EFFECTIVE
TEMPERATURE
COMPENSIATIONS
αVZ
VZ @ IZT IZT Z
ZT I
R VZT
JEDEC
TYPE
NUMBER
VOLTS mA OHMS µA mV oC %/oC
1N4775
1N4775A
1N4776
1N4776A
8.5
8.5
8.5
8.5
0.5
0.5
0.5
0.5
200
200
200
200
10
10
10
10
64
132
32
66
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0.01
0.01
0.005
0.005
1N4777
1N4777A
1N4778
1N4778A
8.5
8.5
8.5
8.5
0.5
0.5
0.5
0.5
200
200
200
200
10
10
10
10
13
26
6
13
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0.002
0.002
0.001
0.001
1N4779
1N4779A
1N4780
1N4780A
8.5
8.5
8.5
8.5
0.5
0.5
1.0
1.0
200
200
100
100
10
10
10
10
3
7
64
132
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0.0005
0.0005
0.01
0.01
1N4781
1N4781A
1N4782
1N4782A
8.5
8.5
8.5
8.5
1.0
1.0
1.0
1.0
100
100
100
100
10
10
10
10
32
66
13
26
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0.005
0.005
0.002
0.002
1N4783
1N4783A
1N4784
1N4784A
8.5
8.5
8.5
8.5
1.0
1.0
1.0
1.0
100
100
100
100
10
10
10
10
6
13
3
7
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0.001
0.001
0.0005
0.0005
*JEDEC Registered Data.
NOTES:
1. Designate Radiation Hardened devices with “RH” prefix instead of “1N,” i.e., RH4784A. Consult factory for TX, TXV or
JANS equivalent SCDs.
2. Measured by superimposing IZ ac rms on IZ dc @ 25oC where IZ ac rms = 10% IZ dc.
3. Maximum allowable change between any two discrete temperatures over the specified temperature change.
4. When ordering devices with a tighter tolerance than specified, use a nominal center voltage of 8.4 volts.
5. Voltage measurements to be performed 15 seconds after application of dc current.
PACKAGE DIMENSIONS
All dimensions in: INCH
mm