To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
Is Now Part of
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FDS6670AS
30V N-Channel PowerTrench
SyncFET™
General Description
The FDS6670AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDS6670AS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
Applications
DC/DC converter
Low side notebook
Features
13.5 A, 30 V. RDS(ON) max= 9.0 m @ VGS = 10 V
RDS(ON) max= 11.5 m @ VGS = 4.5 V
Includes SyncFET Schottky body diode
Low gate charge (27nC typical)
High performance trench technology for extremely low
RDS(ON) and fast switching
High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage 20 V
IDDrain Current – Continuous (Note 1a) 13.5 A
– Pulsed 50
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b) 1.2
PD
(Note 1c) 1
W
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 C
Thermal Characteristics
RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 C/W
RJC Thermal Resistance, Junction-to-Case (Note 1) 25 C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6670AS FDS6670AS 13’’ 12mm 2500 units
FDS6670AS 30V N-Channel PowerTrench® SyncFET™
RoHS Compliant
©2010 Fairchild Semiconductor Corporation
FDS6670AS Rev.C1
www.fairchildsemi.com
1
July 2010
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test
Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA 30 V
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient ID = 10 mA, Referenced to 25C 27
mV/C
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 A
IGSS Gate–Body Leakage VGS = 20 V, VDS = 0 V 100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 1.7 3 V
VGS(th)
TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 10 mA, Referenced to 25C –4
RDS(on) Static Drain–Source
On–Resistance
VGS = 10 V, ID = 13.5 A
VGS = 4.5 V, ID = 11.2 A
VGS=10 V, ID =13.5A, TJ=125C
7.5
9
10
9
11.5
12.5
m
ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
gFS Forward
Transconductance VDS = 10 V, ID = 13.5 A 66 S
Dynamic Characteristics
Ciss Input Capacitance
1540 pF
Coss Output Capacitance
440 pF
Crss Reverse Transfer Capacitance
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
160 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 10 20 ns
trTurn–On Rise Time 5 10 ns
td(off) Turn–Off Delay Time 27 44 ns
tf Turn–Off Fall Time
VDS = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6
18 32 ns
td(on) Turn–On Delay Time 13 23 ns
trTurn–On Rise Time 15 27 ns
td(off) Turn–Off Delay Time 24 38 ns
tf Turn–Off Fall Time
VDS = 15 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6
13 23 ns
Qg(TOT) Total Gate Charge at Vgs=10V 27 38 nC
Qg Total Gate Charge at Vgs=5V 16 22 nC
Qgs Gate–Source Charge 4.2 nC
Qgd Gate–Drain Charge
VDD = 15 V, ID = 13.5 A,
5.1 nC
mV/C
FDS6670AS 30V N-Channel PowerTrench® SyncFET™
Rg4.2
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
2
FDS6670AS Rev.C1
2.1
Gate Resistance
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
VSD Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 3.5 A (Note 2)
VGS = 0 V, IS = 7 A (Note 2)
0.5
0.6
0.7 V
trr Diode Reverse Recovery Time 20 nS
Qrr Diode Reverse Recovery Charge
IF = 13.5A,
diF/dt = 300 A/µs (Note 3) 15 nC
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 50°C/W when
mounted on a 1 in2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
FDS6670AS 30V N-Channel PowerTrench® SyncFET™
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
3
FDS6670AS Rev.C1
Typical Characteristics
0
10
20
30
40
50
00.511.52
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
4.5V
4.0V
3.5V
V
GS
= 10V
6.0V
3.0V
2.5V
0.6
1
1.4
1.8
2.2
2.6
0 1020304050
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 3.0V
6.0V
10V
4.0V
4.5V
3.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
-50 -25 0 25 50 75 100 125
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 13.5A
V
GS
= 10V
0.005
0.01
0.015
0.02
0.025
246810
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 6.75A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
11.522.533.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.001
0.01
0.1
1
10
0 0.1 0.2 0.3 0.4 0.5 0.6
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6670AS 30V N-Channel PowerTrench ®
SyncFET™
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
4
FDS6670AS Rev.C1
Typical Characteristics (continued)
0
2
4
6
8
10
0 5 10 15 20 25 30
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
=13.5A V
DS
= 10V
15V
20V
0
600
1200
1800
2400
0 5 10 15 20 25 30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.01 0.1 1 10 100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DC
10s
1s
100ms
100
s
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JA
= 125
o
C/W
T
A
= 25
o
C
10ms1ms
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
JA
= 125°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
R
JA
(t) = r(t) * R
JA
R
JA
= 125 °C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6670AS 30V N-Channel PowerTrench® SyncFET™
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
5
FDS6670AS Rev.C1
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 12 shows the
reverse recovery characteristic of the FDS6670AS.
Figure 12. FDS6670AS SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6670A).
Figure 13. Non-SyncFET (FDS6670A) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
0.00001
0.0001
0.001
0.01
0.1
010 20 30
V
DS
, REVERSE VOLTAGE (V)
I
DSS
, REVERSE LEAKAGE CURRENT (A)
100
o
C
25
o
C
125
o
C
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
TIME : 12.5ns/div
CURRENT : 0.4A/div
TIME : 12.5ns/div
CURRENT : 0.4A/div
FDS6670AS 30V N-Channel PowerTrench® SyncFET™
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
6
FDS6670AS Rev.C1
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower
Auto-SPM
Build it Now
CorePLUS
CorePOWER
CROSSVOLT
CTL
Current Transfer Logic
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficientMax
ESBC
®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series
FACT®
FAST®
FastvCore
FETBench
FlashWriter®*
FPS
F-PFS
FRFET®
Global Power ResourceSM
Green FPS
Green FPS e-Series
Gmax
GTO
IntelliMAX
ISOPLANAR
MegaBuck
MICROCOUPLER
MicroFET
MicroPak
MicroPak2
MillerDrive
MotionMax
Motion-SPM
OptoHiT™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM
PowerTrench®
PowerXS™
Programmable Active Droop
QFET®
QS
Quiet Series
RapidConfigure
Saving our world, 1mW/W/kW at a time™
SignalWise
SmartMax
SMART START
SPM®
STEALTH
SuperFET
SuperSOT-3
SuperSOT-6
SuperSOT-8
SupreMOS
SyncFET
Sync-Lock™
®*
The Power Franchise®
TinyBoost
TinyBuck
TinyCalc
TinyLogic®
TINYOPTO
TinyPower
TinyPWM
TinyWire
TriFault Detect
TRUECURRENT*
SerDes
UHC®
Ultra FRFET
UniFET
VCX
VisualMax
XS™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR
CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,
under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.
Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,
and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of
counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are
listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have
full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information.
Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide
any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our
customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Preliminary First Production
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I48
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
7
FDS6670AS 30V N-Channel PowerTrench® SyncFET™
FDS6670AS Rev.C1
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
