©2008 Fairchild Semic ond uct or Cor porati on
FGL60N100BNTD Rev.A2 www.fairchildsemi.com
IGBT
FGL60N100BNTD
FGL60N100BNTD
NPT-Trench IGBT
General Description
Trench insulated gate bipolar transistors (IGBTs) with NPT
technology show outstanding performance in conduction
and switching characteristics as well as enhanced
avalanche ruggedness. These devices are well suited for
Induction Heating ( I-H ) applications
Features
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A
• High Input Impedance
• Built-in Fast Recovery Diode
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temper ature
Thermal Characteristics
Symbol Description FGL60N100BNTD Units
VCES Collector-Emitter Voltage 1000 V
VGES Gate-Emitter Voltage ± 25 V
ICCollector Current @ TC = 25°C60 A
Collector Current @ TC = 100°C42 A
ICM (1) Pulsed Collector Current 200 A
IFDiode Continuous Forward Current @ TC = 100°C15 A
IFM Diode Maximum Forward Current 200 A
PDM a x i m u m P o w e r Di ssipation @ TC = 25°C 180 W
Maximum Power Dissipation @ TC = 100°C72 W
TJ Operating Junction Temperature -55 to +150 °C
Tstg Storage Temperature Range -55 to +150 °C
TLMaximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300 °C
Symbol Parameter Typ. Max. Units
RθJC(IGBT) Thermal Resistance, Junction-to-Case -- 0.69 °C/W
RθJC(DIODE) Thermal Resistance, Junction-to-Case -- 2.08 °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 25 °C/W
Application
Micro- Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home Appliance
GCETO-264
G
C
E
G
C
E
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FGL60N100BNTD
FGL60N100BNTD Rev.A2
Electrical Characteristics of IGBT TC = 25°C unless otherwise noted
Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characterist ic s
BVCES Collector Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1000 -- -- V
ICES Collector Cut-Off Current VCE = 1000V, VGE = 0V -- -- 1.0 mA
IGES G-E Leakage Current VGE = ± 25, VCE = 0V -- -- ± 500 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 60mA, VCE = VGE 4.0 5.0 7.0 V
VCE(sat) Collector to Emitter
Saturation Voltage IC = 10A, VGE = 15V -- 1.5 1.8 V
IC = 60A, VGE = 15V -- 2.5 2.9 V
Dynamic Characteristics
Cies Input Capacitance VCE=10V, VGE = 0V,
f = 1MHz
-- 6000 -- pF
Coes Output Capacitance -- 260 -- pF
Cres Reverse Transfer Capacitance -- 200 -- pF
Switching Characteristics
td(on) Turn-On Delay Time VCC = 600 V, IC = 60A,
RG = 51Ω, VGE=15V,
Resistive Load, TC = 25°C
-- 140 -- ns
trRise Time -- 320 -- ns
td(off) Turn-Off Delay Time -- 630 -- ns
tfFall Time -- 130 250 ns
QgTotal Gate Charge VCE = 600 V, IC = 60A,
VGE = 15V , TC = 25°C
-- 275 350 nC
Qge Gate-Emitter Charge -- 45 -- nC
Qgc Gate-Collector Charge -- 95 -- nC
Symbol Parameter Test Conditions Min. Typ. Max. Units
VFM Diode Forward Voltage IF = 15A -- 1.2 1.7 V
IF = 60A -- 1.8 2.1 V
trr Diode Reverse Recovery Time IF = 60A di/dt = 20 A/us -- 1.2 1.5 µs
IRInstantaneous Reverse Current VRRM = 1000V -- 0.05 2 µA
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FGL60N100BNTD
FGL60N100BNTD Rev.A2
01234
0
50
100
150
200 20V
15V 10V
9V
8V
7V
VGE = 6V
Common Emit ter
TC = 25oC
Collector Current, I C [A]
Collector-Emitter Voltage, VCE [V] 01234
0
10
20
30
40
50
60
70
80
90
TC = 125oC
TC = 2 5 oC
Common Emit t er
VGE = 15V
TC = 25oC
TC = 125oC ------
Collector Current, I C [A]
Collector-Emitter Voltage, VCE [V]
-50 0 50 100 150
1
2
3
IC=10A
30A
60A
80A
Common Emitter
VGE=15V
Collector-Emitter Voltage, VCE [V]
Case Temperature, TC []℃
4 8 12 16 20
0
2
4
6
8
10 Common Emitter
TC= - 40 OC
IC=10A
80A
60A
30A
Collector-Emitter Voltage, VCE[V]
Gate-Emitter Voltage, VGE [V]
4 8 12 16 20
0
2
4
6
8
10 Common Emitt er
TC = 25oC
80A
60A
30A
IC = 10A
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, VGE [V]
4 8 12 16 20
0
2
4
6
8
10 Common Emitter
TC = 125oC
80A
60A
30A
IC = 10A
Collector-Emitter Voltage, VCE [V]
Gate-Em itter Voltag e, VGE [V]
Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteris tics
Fig 4. Saturation Voltage vs. VGE Fig 3. Saturation Voltage vs. Case
Temperature at Varient Current Level
Fig 5. Saturation Voltage vs. VGE Fig 6. Saturation Voltage vs. VGE
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FGL60N100BNTD
FGL60N100BNTD Rev.A2
0 5 10 15 20 25 30
100
1000
10000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Cres
Coes
Cies
Capacitance [pF ]
Collector-Emitter Volt age, VCE [V] 0 50 100 150 200
10
100
1000
10000
VCC=600V, IC=60A
VGE=15V
TC=25oCTdoff
Tdon
Tr
Tf
Switching Time [ns]
Gate Resistance, RG [?]
10 20 30 40 50 60
100
1000 V CC=600V, Rg=51Ω
V GE=15V, T C=25oC
Tdon
Tr
Tf
Tdoff
Switching Time [ns]
Colle c to r Curren t, IC [A]
0 50 100 150 200 250 300
0
5
10
15
20 Common Emitter
VCC=600V, RL=10Ω
TC=25 oC
Gate-Emitter Voltage,VGE [V]
Gate Charge, Qg [nC]
1 10 100 1000
0.1
1
10
100
Single Nonrepetitive Pul se
TC = 25oC
Curve must be darated
linearly with incr ease
in temperature
50us
100us
1ms
DC Operation
IC MAX. (Pulse d)
IC MAX. (Continuous)
Collector Current , I C [A]
Collector-Emitter Voltage, VCE [V] 10-4 10-3 10-2 10-1 100101
1E-3
0.01
0.1
1
10
0.1
0.5
0.2
0.05
0.02
0.01
single pulse
Thermal Response, ZθJC [oC/W]
Rectang u lar Pulse Duration [sec]
Fig 7. Capacitance Characteristics Fig 8. Switching Characteristics vs.
Gate Resistance
Fig 9. Switchin g Ch aracteristics vs.
Collector Current Fig 10. Gate Charge Characteristics
Fig 11. SOA Characteristics Fig 12. Transient Thermal Impedance of IGBT
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FGL60N100BNTD
FGL60N100BNTD Rev.A2
Fig 17. Junction capacitance
0.1
1
10
100
0.0 0.5 1.0 1.5 2.0 2.5
TC = 25 oC
TC = 100 oC
Forward Voltage, VFM [V]
Forward Current, IF[A]
0 40 80 120 160 200 240
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Irr
trr
IF= 60A
TC= 25oC
di/dt [A/µs]
Reverse Recovery Time, trr [ns]
0
20
40
60
80
100
120
Reverse Recovery Current Irr [A]
10 20 30 40 50 60
0.4
0.6
0.8
1.0
1.2
Irr
trr
Forward Current, IF [A]
Reverse Recovery Time, trr [ns]
4
6
8
10
12
di/dt=-20A/µs
TC=25oC
Reverse Recovery Current Irr [A]
0 300 600 900
1E-3
0.01
0.1
1
10
100
1000
TC = 150oC
TC= 25oC
Reverse Current, IR [µA]
Reverse Voltage, VR [V]
0.1 1 10 100
0
50
100
150
200
250 TC = 25 oC
Capacitance, Cj [pF]
Reverse Voltage, VR [V]
Fig 14. Reverse Recovery Characteristics
vs. di/dt
Fig 13. Forward Characteristics
Fig 15. Reverse Recovery Characte ristics vs.
Forward Current Fig 16. Reverse Current vs. Reverse Volt age
FGL60N100BNTD Rev.A2 www.fairchildsemi.com
FGL60N100BNTD
Package Dimension
5.45TYP
[5.45
±0.30
]5.45TYP
[5.45
±0.30
]
4.90
±0.20
20.00
±0.20
(8.30) (8.30) (1.00)
(0.50)
(2.00)
(7.00)
(R1.00)
(R2.00)
ø3.30 ±0.20
(7.00)
(1.50)
(1.50) (1.50)
2.50
±0.20
3.00
±0.20
2.80
±0.30
1.00
+0.25
–0.10
0.60
+0.25
–0.10
1.50
±0.20
6.00
±0.20
20.00
±0.20
20.00
±0.50
5.00
±0.20
3.50
±0.20
2.50
±0.10
(9.00)
(9.00)
(2.00)
(1.50)
(0.15)
(2.80) (4.00)
(11.00)
TO-264
Dimensions in Millimeters
FGL60N100BNTD Rev.A2
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OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
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SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
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2. A critical component in any component of a life support,
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or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
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EcoSPARK®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FPS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GOT™
i-Lo™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
PDP-SPM™
Power220®
Power247®
POWEREDGE®
Power-SPM™
PowerTrench®
Programmable Active Droop™
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
The Power Franchise®
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TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
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TinyWire™
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UHC®
UniFET™
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Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary First Production This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to
improve design.
Obsolete Not In Production This datasheet contains specifications on a product that has been dis-
continued by Fairchild Semiconductor.The datasheet is printed for refer-
ence information only.
tm
Rev. I29
tm
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