2SK2806-01 N-channel MOS-FET FAP-IIIB Series 30V > Features - 0,02 35A 30W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 30 35 140 16 129,3 30 150 -55 ~ +150 Unit V A A V mJ* W C C * L=0,07mH, VCC=12V - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Symbol V (BR)DSS V GS(th) I DSS Gate Source Leakage Current Drain Source On-State Resistance I R Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) g C C C t t t t I V t Q Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Symbol R th(ch-a) R th(ch-c) Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=30V Tch=25C VGS=0V Tch=125C VGS=16V VDS=0V ID=17,5A VGS=4V VGS=10V ID=17,5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=15V ID=35A VGS=10V RGS=10 Tch=25C L = 100H IF=2xIDR VGS=0V Tch=25C IF=2xIDR VGS=0V -dIF/dt=100A/s Tch=25C Min. 30 1,0 Test conditions channel to air channel to case Min. 16 Typ. 1,5 10 0,2 10 0,022 0,014 33 1100 550 240 9 15 75 50 Max. 2,0 500 1,0 100 0,03 0,02 1650 830 360 15 23 115 75 35 0,98 50 0,08 Typ. Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98 1,71 Max. 75 4,16 Unit V V A mA nA S pF pF pF ns ns ns ns A V ns C Unit C/W C/W 2SK2806-01 N-channel MOS-FET 30V 0,02 35A FAP-IIIB Series 30W > Characteristics Typical Output Characteristics Drain-Source On-State Resistance vs. Tch ID=f(VDS); 80s pulse test; TC=25C ID [A] RDS(ON) [m] 1 VDS [V] 2 Tch [C] VGS [V] Typical Forward Transconductance vs. ID Gate Threshold Voltage vs. Tch RDS(on)=f(ID); 80s pulse test; TC=25C gfs=f(ID); 80s pulse test; VDS=25V; Tch=25C VGS(th)=f(Tch); ID=1mA; VDS=VGS 5 ID [A] Typical Capacitances vs. VDS VGS(th) [V] gfs [S] 4 Tch [C] Typical Gate Charge Characteristic IF=f(VSD); 80s pulse test; Tch=25C VDS [V] 7 VDS [V] 8 Qg [nC] Maximum Avalanche Energy vs. starting Tch 9 VSD [V] Zth(ch-c) [K/W] ID=f(VDS): D=0,01, Tc=25C Transient Thermal impedance Zthch=f(t) parameter:D=t/T 12 ID [A] EAV [mJ] starting Tch [C] Safe Operation Area EAV=f(starting Tch): VCC=12V; IAV 35A 10 Forward Characteristics of Reverse Diode VGS=f(Qg); ID=35A; TC=25C IF [A] C=f(VDS); VGS=0V; f=1MHz 6 VGS [V] ID [A] 3 Typical Drain-Source On-State-Resistance vs. ID RDS(ON) [m] ID=f(VGS); 80s pulse test; VDS=25V; Tch=25C ID [A] C [F] Typical Transfer Characteristics RDS(on) = f(Tch); ID=17,5A; VGS=10V VDS [V] This specification is subject to change without notice! t [s] 2SK2806-01 N-channel MOS-FET 30V 0,02 35A FAP-IIIB Series 30W > Characteristics Power Dissipation PD=f(TC) 110 100 90 80 PD / PDmax [%] 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 125 150 TC [C] Maximum Avalanche Current vs. starting Tch IAV=f(starting Tch) 110 100 90 80 IAV / IAVmax [%] 70 60 50 40 30 20 10 0 0 25 50 75 100 starting Tch [C] This specification is subject to change without notice!