2SK2806-01 N-channel MOS-FET
FAP-IIIB Series 30V 0,02Ω 35A 30W
>Features > Outline Drawing
-High Current
-Low On-Resistance
-No Secondary Breakdown
-Low Driving Power
-Avalanche Rated
>Applications
-Motor Control
-General Purpose Power Amplifier
-DC-DC converters
>Maximum Ratings and Characteristics > Equivalent Circuit
-Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Symbol Rating Unit
Drain-Source-Voltage VDS 30 V
Continous Drain Current ID 35 A
Pulsed Drain Current ID(puls) 140 A
Gate-Source-Voltage VGS ±16 V
Maximum Avalanche Energy EAV 129,3 mJ*
Max. Power Dissipation PD 30 W
Operating and Storage Temperature Range Tch 150 °C
Tstg -55 ~ +150 °C
* L=0,07mH, VCC=12V
-Electrical Characteristics (TC=25°C), unless otherwise specified
Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage V(BR)DSS ID=1mA VGS=0V 30 V
Gate Threshhold Voltage VGS(th) ID=1mA VDS=VGS 1,0 1,5 2,0 V
Zero Gate Voltage Drain Current IDSS VDS=30V Tch=25°C 10 500 µA
VGS=0V Tch=125°C 0,2 1,0 mA
Gate Source Leakage Current IGSS VGS=±16V VDS=0V 10 100 nA
Drain Source On-State Resistance RDS(on) ID=17,5A VGS=4V 0,022 0,03 Ω
VGS=10V 0,014 0,02 Ω
Forward Transconductance gfs ID=17,5A VDS=25V 16 33 S
Input Capacitance Ciss VDS=25V 1100 1650 pF
Output Capacitance Coss VGS=0V 550 830 pF
Reverse Transfer Capacitance Crss f=1MHz 240 360 pF
Turn-On-Time ton (ton=td(on)+tr) td(on) VCC=15V 9 15 ns
tr ID=35A 15 23 ns
Turn-Off-Time toff (ton=td(off)+tf) td(off) VGS=10V 75 115 ns
tf RGS=10 Ω 50 75 ns
Avalanche Capability IAV L = 100µH Tch=25°C 35 A
Diode Forward On-Voltage VSD IF=2xIDR VGS=0V Tch=25°C 0,98 1,71 V
Reverse Recovery Time trr IF=2xIDR VGS=0V 50 ns
Reverse Recovery Charge Qrr -dIF/dt=100A/µs Tch=25°C 0,08 µC
- Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit
Thermal Resistance Rth(ch-a) channel to air 75 °C/W
Rth(ch-c) channel to case 4,16 °C/W
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98
N-channel MOS-FET
2SK2806-01
30V 0,02Ω 35A 30W
FAP-IIIB Series
> Characteristics
Typical Output Characteristics
Drain-Source On-State Resistance vs. T
ch
Typical Transfer Characteristics
↑
ID=f(VDS); 80µs pulse test; TC=25°C
↑
RDS(on) = f(Tch); ID=17,5A; VGS=10V
↑
ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C
ID [A]
1
RDS(ON) [mΩ]
2
ID [A]
3
VDS [V]
→
Tch [°C]
→
VGS [V]
→
Typical Drain-Source On-State-Resistance vs. I
D
Typical Forward Transconductance vs. I
D
Gate Threshold Voltage vs. T
ch
↑
RDS(on)=f(ID); 80µs pulse test; TC=25°C
↑
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
↑
VGS(th)=f(Tch); ID=1mA; VDS=VGS
RDS(ON) [mΩ]
4
gfs [S]
5
VGS(th) [V]
6
ID [A]
→
ID [A]
→
Tch [°C]
→
Typical Capacitances vs. V
DS
Typical Gate Charge Characteristic
Forward Characteristics of Reverse Diode
↑
C=f(VDS); VGS=0V; f=1MHz
↑
VGS=f(Qg); ID=35A; TC=25°C
↑ ↑
IF=f(VSD); 80µs pulse test; Tch=25°C
C [F]
7
VDS [V]
8
VGS [V]
IF [A]
9
VDS [V]
→
Qg [nC]
→
VSD [V]
→
Maximum Avalanche Energy vs. starting T
ch
Safe Operation Area
EAV=f(starting Tch): VCC=12V; IAV ≤ 35A ID=f(VDS): D=0,01, Tc=25°C ↑
Zth(ch-c) [K/W]
Transient Thermal impedance
↑10 ↑12 Zthch=f(t) parameter:D=t/T
EAV [mJ]
ID [A]
starting Tch [°C]
→
VDS [V]
→
t [s]
→
This specification is subject to change without notice!
N-channel MOS-FET
2SK2806-01
30V 0,02Ω 35A 30W
FAP-IIIB Series
> Characteristics
This specification is subject to change without notice!
Power Dissipation
PD=f(TC)
0
10
20
30
40
50
60
70
80
90
100
110
0 25 50 75 100 125 150
TC [°C]
P
D / P
Dmax
[%]
Maximum Avalanche Current vs. starting Tch
IAV=f(starting Tch)
0
10
20
30
40
50
60
70
80
90
100
110
0 25 50 75 100 125 150
starting Tch [°C]
I
AV / I
AVmax
[%]
