MMBD914 HIGH-SPEED SWITCHING DIODE
PRV : 100 Volts
Io : 200 mA
FEATURES :
* Silicon Epitaxial Planar Diode
* Fast switching speed
* Surface mount package ideally suited
for automatic insertion
* High conductance
* Pb / RoHS Free
MECHANICAL DATA :
* Case : SOT-23 plastic Case
* Marking Code : 5D
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (Ta =25 °C unless otherwise noted)
Parameter Symbol Unit
Reverse Voltage VRV
Forward Current IFmA
Maximum Peak Forward Surge Current IFSM mA
Total Power Dissipation, FR-5 Board Ta = 25 °C (Note 1) mW
Derate above 25 °C mW/°C
Thermal Resistance Junction to Ambient RӨJA °C/W
Total Power Dissipation, Alumina Substrate Ta=25 °C(Note 2) mW
Derate above 25 °C mW/°C
Thermal Resistance Junction to Ambient RӨJA °C/W
Junction and Storage Temperature Range TJ, TSTG °C
ELECTRICAL CHARACTERISTICS (Ta =25 °C unless otherwise noted
Parameter Test Condition Symbol Min. Max. Unit
Reverse Breakdown Voltage IR = 100 µAdc V(BR) 100 - V
Forward Voltage IF = 10 mAdc VF-1V
Reverse Current VR = 20 V -25nA
VR = 75 V - 5.0 µA
Diode Capacitance VR = 0 V, f = 1 MHz CT- 4.0 pF
Reverse Recovery Time IF = IR = 10 mAdc Trr - 4.0 ns
Notes :
(1) FR-5 = 1.0 x 0.75 x 0.062 in.
(2) Alumina = 0.4 x 0.3 x 0.024 in. 99.5 % alumina.
Page 1 of 2 Rev. 01 : May 22, 2006
Value
100
200
500
IR
PD1.8
PD
300
2.4
225
556
-55 to +150
417
3
bottom view
3
12
1.02
0.89
2.04
1.78
3.10
2.70
Dimensions in millimeters
12
0.19
0.08
3.0
2.2
0.50
0.35
0.100
0.013
1.40
0.95
SOT-23
1.65
1.20
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FIG.1 - POWER DERATING CURVE FIG.2 - TYPE CAPACITANCE VS.
REVERSE VOLTAGE
FIG.3 - FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS
Page 2 of 2 Rev. 01 : May 22, 2006
RATINGS AND CHARACTERISTIC CURVES ( MMBD914 )
POWER DISSIPATION, (mW)
AMBIENT TEMPERATURE, (°C)
50
0
0 100
100
150
200
250
50 150 0 2 4 6 8
0.44
0.48
0.52
0.64
0.60
0.56
REVERSE VOLTAGE, (V)
CAPACITANCE, (pF)
REVERSE VOLTAGE, (V)
FORWARD VOLTAGE, (V)
FORWARD CURRENT, (mA)
0.2 0.4 1.0
100
10
1.0
0.1
REVERSE CURRENT, (µA)
030
50
10 40
0.001
0.01
0.1
1.0
10
Ta = 25 °C
Ta = 85 °C
FR-5 Board
300 0.68
Alumina Substrate
0.6 0.8 1.2
20
Ta = 25 °C
Ta = 85 °C
Ta = 150 °C
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