5SNS0225U172100 - Abb Switzerland Ltd. Semiconductors

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

VCE = 1700 V

IC= 225 A

Doc. No. 5SYA1537-01 Jan. 04

·Low-loss, rugged IGBT SPT chip-set

·EMC friendly switching

characteristics

·Low profile compact baseless

package for good power cycling

·Suitable for snap-on gate-driver

connection

·Integrated PTC substrate

temperature sensor

·Aluminium nitride substrate for low

thermal resistance

Maximum rated values 1) 2)

Parameter Symbol Conditions min max Unit

Collector-emitter voltage VCES VGE = 0 V, Tvj ³ 25 °C 1700 V

DC collector current ICTh = 85 °C 225 A

Peak collector current ICM tp = 1 ms, Th = 85 °C 450 A

Gate-emitter voltage VGES -20 20 V

Total power dissipation Ptot Th = 25 °C, per switch (IGBT) 1250 W

DC forward current IF225 A

Peak forward current IFM 450 A

Surge current IFSM

VR = 0 V, Tvj = 125 °C,

tp = 10 ms, half-sinewave 2700 A

IGBT short circuit SOA tpsc

VCC = 1300 V, VCEM CHIP £ 1700 V

VGE £ 15 V, Tvj £ 125 °C 10 µs

Isolation voltage Visol 1 min, f = 50 Hz 4000 V

Junction temperature Tvj 150 °C

Case operating temperature Tc(op) -40 125 °C

Storage temperature Tstg -40 125 °C

M1Base-heatsink, M5 screws 2 3

Mounting torques M2Main terminals, M6 screws 4 6 Nm

1) Maximum rated values indicate limits beyond which damage to the device may occur

IGBT Module LoPak5 SPT

5SNS 0225U172100

PRELIMINARY

5SNS 0225U172100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1537-01 Jan. 04 page 2 of 9

IGBT characteristic values 2)

Parameter Symbol Conditions min typ max Unit

Collector (-emitter)

breakdown voltage V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 °C 1700 V

Tvj = 25 °C 2.30 2.70 V

Collector-emitter 3)

saturation voltage VCE sat IC = 225 A, VGE = 15 V Tvj = 125 °C 2.60 V

Tvj = 25 °C 1.5 mA

Collector cut-off current ICES VCE = 1700 V, VGE = 0 V Tvj = 125 °C 15 mA

Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C -500 500 nA

Gate-emitter threshold voltage VGE(TO) IC = 30 mA, VCE = VGE, Tvj = 25 °C 4.5 6.5 V

Gate charge Qge

IC = 225 A, VCE = 900 V,

VGE = -15 V .. 15 V 1890 nC

Input capacitance Cies 20.7

Output capacitance Coes 1.45

Reverse transfer capacitance Cres

VCE = 25 V, VGE = 0 V, f = 1 MHz,

Tvj = 25 °C

0.87

Tvj = 25 °C 135

Turn-on delay time td(on) Tvj = 125 °C 180 ns

Tvj = 25 °C 100

Rise time tr

VCC = 900 V,

IC = 225 A,

RG = 5.6 W,

VGE = ±15 V,

Ls = 55 nH, inductive load Tvj = 125 °C 110 ns

Tvj = 25 °C 515

Turn-off delay time td(off) Tvj = 125 °C 600 ns

Tvj = 25 °C 65

Fall time tf

VCC = 900 V,

IC = 225 A,

RG = 5.6 W,

VGE = ±15 V,

Ls = 55 nH, inductive load Tvj = 125 °C 110 ns

Tvj = 25 °C 50

Turn-on switching energy Eon

VCC = 900 V, IC = 225 A,

VGE = ±15, RG = 5.6 W,

Ls = 55 nH, inductive load Tvj = 125 °C 70

Tvj = 25 °C 37

Turn-off switching energy Eoff

VCC = 900 V, IC = 225 A,

VGE = ±15, RG = 5.6 W,

Ls = 55 nH, inductive load Tvj = 125 °C 60

Short circuit current ISC

tpsc  10 µs, VGE = 15 V, Tvj = 125 °C,

VCC = 1300 V, VCEM CHIP  1700 V 1050 A

Module stray inductance

plus to minus Ls DC 20 nH

Th = 25 °C 0.9

Resistance, terminal-chip RCC’+EE’ Th = 125 °C 1.1 m

3) Collector emitter saturation voltage is given at chip level

5SNS 0225U172100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1537-01 Jan. 04 page 3 of 9

Diode characteristic values 2)

Parameter Symbol Conditions min typ max Unit

Tvj = 25 °C 2.00 2.30

Continous forward voltage 4) VFIF = 225 A Tvj = 125 °C 2.05 V

Tvj = 25 °C 175

Peak reverse recovery

current Irr Tvj = 125 °C 200 A

Tvj = 25 °C 28

Recovered charge Qrr Tvj = 125 °C 58 µC

Tvj = 25 °C 300

Reverse recovery time trr Tvj = 125 °C 600 ns

Tvj = 25 °C 14

Reverse recovery energy Erec

VCC = 900 V,

IF = 225 A,

VGE = ±15 V,

RG = 5.6 W

Ls = 55 nH

inductive load

Tvj = 125 °C 30 mJ

2) Maximum rated and characteristic values according to IEC 60747-9

4) Forward voltage is given at chip level

Thermal properties

Parameter Symbol Conditions min typ max Unit

IGBT thermal resistance 5)

junction to heatsink Rth(j-h)IGBT 0.12 K/W

Diode thermal resistance 5)

junction to heatsink Rth(j-h)DIODE

Heatsink: flatness < ±50 µm,

roughness < 6 µm without ridge

Thermal grease: conductivity ³ 0.8 W/mK,

thickness 30 µm < t < 50 µm 0.23 K/W

Temperature sensor PTC RT = RT0 exp [B (1/T - 1/T0)]

RT0 = 1k (±3%), B = -760 K (±2%), T0 = 298 K

Mechanical properties

Parameter Symbol Conditions min typ max Unit

Dimensions L x W x H Typical , see outline drawing 184.5 x 106.5 x 34.5 mm

Term. to base: 9.5

Clearance distance DC

according to IEC 60664-1

and EN 50124-1 Term. to term: 11 mm

Term. to base: 9.5

Surface creepage distance DSC

according to IEC 60664-1

and EN 50124-1 Term. to term: 12.5 mm

Weight 485 gr

PCB mounting Self tapping screw, Hole 2.5mm diameter, 6.0mm deep

Mounting 5)

Control terminal Spring pins, pitch of pins = 4mm, pcb thickness = 1.6mm

5) For detailed mounting instructions refer to ABB Document No. 5SYA 2017

5SNS 0225U172100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1537-01 Jan. 04 page 4 of 9

Electrical configuration

Outline drawing

Note: all dimensions are shown in mm

For mounting instructions refer to ABB document No. 5SYA 2017

This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.

5SNS 0225U172100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1537-01 Jan. 04 page 5 of 9

100

150

200

250

300

350

400

450

0123456

VCE [V]

[A]

Tvj = 25 °C

11V

13V

15V

17V

100

150

200

250

300

350

400

450

0123456

VCE [V]

[A]

Tvj = 125 °C

11V

13V

15V

17V

Fig. 1 Typical output characteristics, chip level Fig. 2 Typical output characteristics, chip level

100

150

200

250

300

350

400

450

0123456789101112

VGE [V]

[A]

125 °C

25 °C

VGE = 25 V

0.5

1.5

2.5

0 500 1000 1500 2000

VCE [V]

C pulse

/ I

Chip

Power terminals

VGE = ±15 V, RG = 5.6 ohm

Tvj = 150 °C

Fig. 3 Typical transfer characteristics, chip level Fig. 4 Turn-off safe operating area (RBSOA)

5SNS 0225U172100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1537-01 Jan. 04 page 6 of 9

0.00

0.05

0.10

0.15

0.20

0 100 200 300 400 500

IC [A]

, E

off

[J]

VCC = 900 V

RG = 5.6 ohm

VGE = ±15 V

Tvj = 125 °C

Ls = 55 nH

Eon

Eoff

0.00

0.05

0.10

0.15

0.20

0 5 10 15 20 25

RG [ohm]

, E

off

[J]

VCC = 900 V

IC = 225 A

VGE = ±15 V

Tvj = 125 °C

Ls = 55 nH

Eon

Eoff

Fig. 5 Typical switching energies per pulse

vs collector current

Fig. 6 Typical switching energies per pulse

vs gate resistor

0.01

0.10

1.00

0 100 200 300 400 500

IC [A]

d(on)

, t

d(off)

, t

[µs]

VCC = 900 V

RG = 5.6 ohm

VGE = ±15 V

Tvj = 125 °C

Ls = 55 nH

td(off)

td(on)

0.01

0.10

1.00

10.00

0 5 10 15 20 25

RG [ohm]

d(on)

, t

d(off)

, t

[µs]

VCC = 900 V

IC = 225 A

VGE = ±15 V

Tvj = 125 °C

Ls = 55 nH td(off)

td(on)

Fig. 7 Typical switching times

vs collector current

Fig. 8 Typical switching times

vs gate resistor

5SNS 0225U172100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1537-01 Jan. 04 page 7 of 9

0.1

100

0 5 10 15 20 25 30 35

VCE [V]

C [nF]

VGE = 0 V

fOSC = 1 MHz

VOSC = 50 mV

Cies

Coes

Cres

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

Qg [µC]

[V]

VCC = 900 V

VCC = 1300

IC = 225 A

Tvj = 25 °C

Fig. 9 Typical capacitances

vs collector-emitter voltage

Fig. 10 Typical gate charge characteristics

100

200

300

400

0 20 40 60 80 100 120 140 160

Th [°C]

, I

[A]

IGBT

Diode

VGE ³ 15 V

Tvj = 150 °C

200

400

600

800

1000

1200

1400

1600

1800

2000

0 20406080100120140

T [°C]

[ohm]

)11(

TTB

TT eRR -

298%),2(760%),3(1 00

T=±

=±W=

Fig. 11 Rated current vs temperature Fig. 12 PTC temperature sensor

5SNS 0225U172100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1537-01 Jan. 04 page 8 of 9

0 100 200 300 400 500

IF [A]

rec

[mJ]

100

150

200

250

[A], Q

[µC]

VCC = 900 V

RG = 5.6 ohm

Tvj = 125 °C

Ls = 55 nH Irr

Erec

Qrr

100

150

200

250

300

350

400

450

0.0 1.0 2.0 3.0

VF [V]

[A]

25°C

125°C

Fig. 13 Typical reverse recovery characteristics

vs forward current

Fig. 14 Typical diode forward characteristics,

chip level

0 5 10 15 20 25

RG [ohm]

rec

[mJ]

100

150

200

250

300

350

400

[A], Q

[µC]

VCC = 900 V

IF = 225 A

Tvj = 125 °C

Ls = 55 nH

Erec

Irr

Qrr

Fig. 15 Typical reverse recovery characteristics

vs gate resistor

5SNS 0225U172100

This technical information specifies semiconductor devices but promises no characteristics. No warranty or

guarantee expressed or implied is made regarding delivery, performance or suitability.

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

ABB Switzerland Ltd Doc. No. 5SYA1537-01 Jan. 04

Semiconductors

Fabrikstrasse 3

CH-5600 Lenzburg, Switzerland

Telephone +41 (0)58 586 1419

Fax +41 (0)58 586 1306

Email abbsem@ch.abb.com

Internet www.abb.com/semiconductors

Analytical function for transient thermal

impedance:

)e-(1R = (t)Z

t/-

ih)-(jth å

i 12345

Ri(K/kW) 101 12.1 3.6 3.0

IGBT

ti(ms) 198 14.2 3.0 0.5

Ri(K/kW) 60.0 160 5.72 9.82

DIODE

ti(ms) 195 190 5.67 1.38

0.0001

0.001

0.01

0.1

0.001 0.01 0.1 1 10

t [s]

th(j-h)

[K/W] IGBT, DIODE

Zth(j-h) IGBT

Zth(j-h) Diode

Fig. 16 Typical thermal impedance vs time