Spec.No.IGBT-SP-03013 R2 IGBT MODULE MBL1200E17D PRELIMINARY SPEC. Silicon N-channel IGBT OUTLINE DRAWING FEATURES High thermal fatigue durability.(delta Tc=70,N>30,000cycles) High speed, low loss IGBT module. Low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). Low driving power due to low input capacitance MOS gate. High reliability, high durability module. Isolated heat sink(terminal to base). CIRCUIT DIAGRAM 57 43.5 10.65 49.4 10.35 Collector Current DC 1ms DC 1ms DC 1ms Forward Current (Free wheel Diode) Forward Current (Chopper Diode) Junction Temperature lsolation Test Voltage Terminals (M4/M8) Screw Torque Mounting (M6) Unit VCES VGES IC ICp V V 40 MBL1200E17D 1,700 20 1,200 2,400 600 1,200 1,200 2,400 -40 +125 4,000(AC 1 minute) 2/10 (1) 6 (2) A IF(FWD) IFM(FWD) IF(chopper) A A IFM(chopper) Tstg VISO - Notes: (1) Recommended Value 1.80.2/91N*m 38 Weight : 1100(g) Symbol Collector Emitter Voltage Gate Emitter Voltage 124 140 7 40 18 5.2 28.7 Item 7 M8 M4 ABSOLUTE MAXIMUM RATINGS (TC=25) Unit in mm 130 57 18 VRMS N*m (2) Recommended Value 5.50.5N*m ELECTRICAL CHARACTERISTICS 1) IGBT + FWD Item Symbol Unit Min. mA nA V V nF /W 5.5 - Symbol Unit Min. Typ. IAKS mA - - Peak Forward Voltage Drop VF V - 2.4 Reverse Recovery Time trr s - 0.7 Reverse Recovery Loss Err(10%) J/P - 0.42 10.0 VAK=1,700V, Tj=25 IF=1,200A, Tj=125 2.8 Terminal Resistance Typ. 0.4m 1.0 VCC=900V, Ic=1,200A, L=90nH(TBD), CGE=120nF(TBD), RG=1.5(TBD) (3) 0.6 V =15V, Tj=125oC GE Thermal Impedance Contact Thermal Impedance Rth(j-c) Rth(c-f) /W /W - 0.016 0.030 Junction to case Case to fin (at Chopper Diode part) Collector Emitter Cut-Off Current Gate Emitter Leakage Current Collector Emitter Saturation Voltage Gate Emitter Threshold Voltage Input Capacitance Rise Time Turn On Time Switching Times Fall Time Turn Off Time Turn On Loss Turn Off Loss Peak Forward Voltage Drop IGBT Thermal Impedance FWD Contact Thermal Impedance ICES IGES VCE(sat) VGE(TO) Cies tr ton tf toff Eon(10%) Eoff(10%) VFM Rth(j-c) Rth(j-c) Rth(c-f) s J/P J/P V /W Typ. Max. Test Conditions 10 VCE=1,700V, VGE=0V, Tj=25 500 VGE=20V, VCE=0V, Tj=25 2.7 3.3 IC=1,200A, VGE=15V, Tj=125 7.0 8.5 VCE=10V, IC=120mA, Tj=25 100 VCE=10V, VGE=0V,f=100kHz, Tj=25 0.9 1.5 VCC=900V, Ic=1,200A 1.6 2.4 L=90nH(TBD), 0.2 0.4 CGE=120nF(TBD) (3) 1.7 3.4 RG=1.5(TBD) (3) o 0.4 0.6 VGE=15V, Tj=125 C 0.45 0.65 1.8 2.6 Ic=600A, VGE=0V, Tj=125oC 0.020 Junction to case 0.060 0.016 Case to fin (at IGBT+FWD part) 2) Chopper DIODE Item Collector Emitter Cut-Off Current Max. Notes: (3) RG value is the test condition's value for decision of the switching times, not recommended value. Please, determine the suitable RG value after the measurement of switching waveforms(overshoot voltage, etc.)with appliance mounted. Test Conditions