MAXIMUM RATINGS: (TA=25°C)
SYMBOL UNITS
Continuous Reverse Voltage VR30 V
Continuous Forward Current IF200 mA
Peak Repetitive Forward Current IFRM 300 mA
Forward Surge Current, tp=10ms IFSM 600 mA
Power Dissipation PD350 mW
Operating and Storage
Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 357 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MAX UNITS
IRVR=25V 2.0 µA
VFIF=0.1mA 200 mV
VFIF=1.0mA 260 mV
VFIF=10mA 340 mV
VFIF=30mA 420 mV
VFIF=100mA 500 mV
CdVR=1.0V, f=1.0 MHz 10 pF
trr IF=IR=10mA, Irr=1.0mA, RL=100Ω5.0 ns
CBAT754
CBAT754A
CBAT754C
CBAT754S
SURFACE MOUNT
SILICON SCHOTTKY DIODES
SOT-23 CASE
Central
Semiconductor Corp.
TM
R0 (27-January 2005)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBAT754
Series types are Silicon Schottky Diodes in an
SOT-23 Surface Mount Package.
CBAT754: SINGLE MARKING CODE: C2K
CBAT754A: DUAL, COMMON ANODE MARKING CODE: C2LA
CBAT754C: DUAL, COMMON CATHODE MARKING CODE: C2MC
CBAT754S: DUAL, IN SERIES MARKING CODE: C2NS
Central
Semiconductor Corp.
TM CBAT754
CBAT754A
CBAT754C
CBAT754S
SURFACE MOUNT
SILICON SCHOTTKY DIODES
R0 (27-January 2005)
SOT-23 CASE - MECHANICAL OUTLINE
MARKING
CODE: C2MC
MARKING
CODE: C2NS
MARKING
CODE: C2K
MARKING
CODE: C2LA
CBAT754 CBAT754A CBAT754C CBAT754S
1) Anode 1) Cathode D2 1) Anode D2 1) Anode D2
2) No Connection 2) Cathode D1 2) Anode D1 2) Cathode D1
3) Cathode 3) Anode D1, Anode D2 3) Cathode D1, Cathode D2 3) Anode D1, Cathode D2
2
3
1
D1 D2
2
3
1
D1 D2
2
3
1
D1 D2
2
3
1
LEAD CODE: LEAD CODE: LEAD CODE:
LEAD CODE:
