tm
February 2012
FDA24N50F N-Channel MOSFET
©2012 Fairchild Semiconductor Corporation
FDA24N50F Rev.C0
www.fairchildsemi.com1
UniFET
TM
FDA24N50F
N-Channel MOSFET
500V, 24A, 0.2Ω
Features
•R
DS(on) = 0.166Ω ( Typ.)@ VGS = 10V, ID = 12A
• Low Gate Charge ( Typ. 65nC)
• Low Crss ( Typ. 32pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
D
G
S
TO-3PN
GSD
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Thermal Characteristics
Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 500 V
VGSS Gate to Source Voltage ±30 V
IDDrain Current -Continuous (TC = 25oC) 24 A
-Continuous (TC = 100oC) 14
IDM Drain Current - Pulsed (Note 1) 96 A
EAS Single Pulsed Avalanche Energy (Note 2) 1872 mJ
IAR Avalanche Current (Note 1) 24 A
EAR Repetitive Avalanche Energy (Note 1) 27 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns
PDPower Dissipation (TC = 25oC) 270 W
- Derate above 25oC2.2W/
oC
TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds 300 oC
Symbol Parameter Ratings Units
RθJC Thermal Resistance, Junction to Case 0.46
oC/WRθCS Thermal Resistance, Case to Sink Typ. 0.24
RθJA Thermal Resistance, Junction to Ambient 40
FDA24N50F N-Channel MOSFET
FDA24N50F Rev.C0
www.fairchildsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics TC = 25oC unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Device Marking Device Package Reel Size Tape Width Quantity
FDA24N50F FDA24N50F TO-3PN - - 30
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TJ = 25oC 500 - - V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 250μA, Referenced to 25oC-0.6-V/
oC
IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V - - 1 μA
VDS = 400V, TC = 125oC--10
IGSS Gate to Body Leakage Current VGS = ±30V, VDS = 0V - - ±100 nA
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250μA3.0-5.0V
RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 12A - 0.166 0.2 Ω
gFS Forward Transconductance VDS = 20V, ID = 12A (Note 4) -30-S
Ciss Input Capacitance VDS = 25V, VGS = 0V
f = 1MHz
- 3240 4310 pF
Coss Output Capacitance - 450 600 pF
Crss Reverse Transfer Capacitance - 32 48 pF
Qg(tot) Total Gate Charge at 10V
VDS = 400V, ID = 24A
VGS = 10V
(Note 4, 5)
-6585nC
Qgs Gate to Source Gate Charge - 18 - nC
Qgd Gate to Drain “Miller” Charge - 26 - nC
td(on) Turn-On Delay Time
VDD = 250V, ID = 24A
RG = 25Ω
(Note 4, 5)
- 49 108 ns
trTurn-On Rise Time - 105 220 ns
td(off) Turn-Off Delay Time - 165 340 ns
tfTurn-Off Fall Time - 87 185 ns
ISMaximum Continuous Drain to Source Diode Forward Current - - 24 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 96 A
VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 24A - - 1.4 V
trr Reverse Recovery Time VGS = 0V, ISD = 24A
dIF/dt = 100A/μs (Note 4)
- 264 - ns
Qrr Reverse Recovery Charge - 1.4 - μC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 6.5mH, IAS = 24A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 24A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDA24N50F N-Channel MOSFET
FDA24N50F Rev.C0
www.fairchildsemi.com
3
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
0.1 1 10
1
10
60
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
VGS = 15.0V
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
ID,Drain Current[A]
VDS,Drain-Source Voltage[V]
0.5
45678
1
10
100
-55oC
150oC
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
25oC
ID,Drain Current[A]
VGS,Gate-Source Voltage[V]
0 20406080
0.15
0.20
0.25
0.30
0.35
*Note: TJ = 25oC
VGS = 20V
VGS = 10V
RDS(ON) [Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.2 0.6 1.0 1.4
1
10
100
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
150oC
IS, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
150
0.1 1 10
0
1500
3000
4500
6000
7500
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
30
0204060
0
2
4
6
8
10
*Note: ID = 24A
VDS = 100V
VDS = 250V
VDS = 400V
VGS, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
70
FDA24N50F N-Channel MOSFET
FDA24N50F Rev.C0
www.fairchildsemi.com
4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-75 -25 25 75 125 175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
*Notes:
1. VGS = 10V
2. ID = 12A
RDS(on), [Normalized]
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
1 10 100 1000
0.01
0.1
1
10
100
200
60μs
100μs
1ms
10ms
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Operation in This Area
is Limited by R DS(on)
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
DC
25 50 75 100 125 150
0
6
12
18
24
ID, Drain Current [A]
TC, Case Temperature [oC]
10-5 10-4 10-3 10-2 10-1 100101
0.001
0.01
0.1
1
0.01
0.1
0.2
0.05
0.02 *Notes:
1. ZθJC(t) = 0.46oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.5
Single pulse
Thermal Response [ZθJC]
Rectangular Pulse Duration [sec]
t
1
P
DM
t
2
FDA24N50F N-Channel MOSFET
FDA24N50F Rev.C0
www.fairchildsemi.com
5
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDA24N50F N-Channel MOSFET
FDA24N50F Rev.C0
www.fairchildsemi.com
6
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
FDA24N50F N-Channel MOSFET
FDA24N50F Rev.C0
www.fairchildsemi.com
7
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
FDA24N50F N-Channel MOSFET
FDA24N50F Rev.C0 www.fairchildsemi.com
8
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
2Cool™
AccuPower™
AX-CAP™*
BitSiC®
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
ESBC™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FlashWriter® *
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green Bridge™
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
mWSaver™
OptoHiT™
OPTOLOGIC®
OPTOPLANAR®
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM®
STEALTH™
SuperFET®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS®
SyncFET™
Sync-Lock™
®*
The Power Franchise®
®
TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC®
TriFault Detect™
TRUECURRENT®*
μSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
™
tm
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
Rev. I61
tm
®