- @5C D MM 8235605 0004156 O MBSIEG D BC 556 - BC 560 STEMENS AKTIENGESELLSCHAF 7- 29-2/ - PNP SiliconTransistors ~~ for AF input and driver stages BC 556, BC 557, BC 558, BC 559, and BC 560 are epitaxial PNP silicon planar transistors in TO 92 plastic package 10 A 3 DIN 41868. They are intended for use in AF input and driver stages (BC 559, BC 560 for low-noise input stages) and as complementary transistors to BC 546, BC 547, BC 548, BC 549, and BC 550. Type Ordering code Type | Ordering code Bc 656") Q62702-C692 BC 5591) Q62702-C695 BC 556 VI Q62702-C692-V3 BC559A Q62702-C695-V1 BC556A Q62702-C692-V1 BC5598 Q62702-C695-V2 BC5568 Q62702-C692-V2 BC659C Q62702-C695-V3 BC 5571) Q62702-C693 Bc 5601) Q62702-C696 BC557 VI Q62702-C693-V3 BC560A Q62702-C696-V1 BCS557A Q62702-C693-V1 BC560B Q62702-C696-V2 BC&57B Q62702-C693-V2 BC560C Q62702-C696-V3 BC 6681) Q62702-C694 25max. EBC BC 558 VI Q62702-C694-V4 Okx04 a 7 BC558A Q62702-C694-V1 ome JS & BC 558B Q62702-C694-V2 at ps BC558C 062702-C694-V3 t U1, *15.2 phe Bidgo be 7 Mounting Instruction: Fixing hole dia 0.6 Approx. weight 0.25 g Dimensions in mm Maximum ratings BC 656| BC 657| BC 65a| BC 559] BC 560 Collactor-base voltage Vogo | 80 50 30 30 50 Vv Collector-emitter voltage -Vces | 80 50 30 30 50 Vv Collector-emitter voltage Vceo | 65 45 30 30 45 Vv Emitter-base voltage -Vego | 5 5 5 5 5 Vv Collector current ~Ic 100 | 100 | 100 | 100 | 100 | mA Collector peak current leu 200 | 200 ; 200 | 200 | 200 | mA Base peak current Igm 200 {| 200 ; 200 | 200 | 200 | mA Emitter-peak current lem 200 | 200 | 200 | 200 {| 200 | mA Junction temperature Tj 150 |} 150 | 150 | 150 | 150 | c Storage temperature range Totg -65 to +150 C Total power dissipation Lot 500 | 500 | 500 | 500 | 500 | mw (Tamb = 26C) ; Thermal resistance Junction to ambient air Ringa $250 | 4250} $250| $250) $250! K/W Junction to case Rthuc $150) 3150; $150) $150} $150| K/w 1) tf the order does not include any exact indication of the current amplification group desired, a transistor of a current amplification group just available from stock will be delivered. 242 pe e72 A-OL 2ei e5sC ) @ a235b05 | OO041L9? 2 MESTEG . SIEMENS AKTIENGESELLSCHAF - Static characteristics (Tamp = 25C) The transistors are grouped in accordance with the DC current gain hg and are marked by V1, A, B, and C. At -Vcge = static characteristics apply. BC 556 - BC 560 T~ 27-2 5 V and the collector currents tabulated below the following 1673 Type BC 556 BC 556 BC 556 BC 558, BC 557 BC 557, BC 559 BC 557,BC 559 | BC 559, Bc 558 BC 558, BC 560 Bc 558,BC 560 | BC 560 hee group | VI A B Cc -Ic hee hee bre hee mA Ic/Ig Io/Ig Ico/Ig Ic/Ig 0.01 - 90 150 270 2 110 180 290 500 (75 to 150) | (110 to 220) (200 to 450} (420 to 800) 100 - 1203) 2003) 4003) BC 656 . BC 557 BC 559 BC 558 BC 560 Collector cutoff current (-Vogo = 30 Vv) -Icpo $15 $15 nA (~Vogo = 30 V; Tambp = 150C) Icpo $5 s5 pA Collector-emitter saturation voltage (-Ig = 10 mA; Jg = 0.5 mA) Veesat | 90 (<300) 90 (<300) mV (~J = 100 mA; Jg = 5 mA) Vegsat | 250 (<650) 250 (<650) | mV (-Ig = 10 mA)" Veesat | 300 (<600) 300 (<600) | mV Base-emitter saturation voltage?) (-Ig = 10 mA; /g = 0.5 mA) Veesat | 700 700 mV (~J = 100 mA; Jg = 5 mA) Vpesat | 900 900 mV Base-emitter voltage : (-Vee = 5 V; Ig = 2 mA) Vae 660 (600 to 700) | (580 to 700) | mV Base-emitter voltage (-Vce =5V; -lIc = 10 mA) -Vee ling DC cunent gain fre = f Uc) Vee = 5 V; Tamp = parameter (common emitter configuration) BC 5568, BC 557B, BC 5588, 8C 5598, BC 560B we 197 10 10! 1675s A~04 Permissible pulse load KO rua =f (0: v= parameter We BC 556, BC 557, BC 558, BC 559, BC 560 0 fina A 10? 40 107 wo 0? wt iw? wo? 07 w? tots Collector current Jc = f (Vee) Vee= 5V mA 3C 556, BC 557, BC 558, BC 659, BC 560 2 to le 10 io a a 05 10V > Vag 245 nore wantin Pneviganantaneneret ee AR Pa ett ae apa a Ru END ate Puta e wie ee ep a . 25 D MM 8235605 oooy2ca q MESIEG - eee ee _ - _ - 7 SIEMENS AKTIENGESELLSCHAF 777 297 2 BC 556 - BC 560 Collector-omitter saturation voltage Collector cutoff current versus potas mech Pre = 20; : temperature Icgo =f (Tambl formax. {common emitter configuration) permissible reverse voltages mA BC656,BC557,8C558,BC559,8C560 nA BC &56, BC 557, BC 568, BC G59, BC 560 10 -lp id 0? i" 0 (On 02 #03 O04 O5 O6Y 0 50 100 150C > ~Veesat lant Transition frequency fr = Flic): Collector-base capacitance Ccg = flVcao) Tamb = 25C Emitter-base capacitance Cepg =f Veno) Vcr = parameter f =1 MHz; Tamp = 28C Miz BC 656, BC 657, BC 558, BC 559, BC 560 pf 8C 556, BC 557, BC 668, BC 569, BC 660 10 f Th ie 10! mA * - Veea-- eno 246 cutee = 1 gh aan ot ata a a me 1 beaniee5C D MM 6235605 000420) O MMSIEG. SIEMENS AKTIENGESELLSCHAF - D 1 - 29 - 2 BC 556 BC 560 h-parameter versus collector currant Nolse figura NF =f (Vee) _ Ay (Ic) _ Ig = 0.2 mA; Ry = 2kOif = 1 kHz He= Foi aamay He At = 200 Hz: Tamp = 26C mA BC S56, BC S67, BC 658, BC 659, BC 660 eB BC 659, HC 560 10 10 a" i 0 wy _ Veg Noise figure NF =f (Jc) Noise figure NF =f (Ic) Vee = 6 V3 f= 1kHz Vog = 8 Vf =120 Hz dB BC 569, BC 560 0B BC559, BC 560 20 20 AF NE | 5 6 0 10 5 5 KQ 0 0 3 2 | 1 . a =2 - wc o =o wo ow? ow ata bs _ I, ~ i 247 1677 A-06