IGBT MODULE PBMB200B12 H-Bridge 200A 1200V CIRCUIT OUTLINE DRAWING 14 13 11 12 8- fasten- tab No 110 Dimension(mm) Approximate Weight : 650g MAXMUM RATINGS (Tc=25C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol PBMB200B12 Unit VCES VGES IC ICP PC Tj Tstg VISO 1200 +/ - 20 200 400 960 -40 to +150 -40 to +125 2500 V V W C C V FTOR 3 N*m Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff Test Condition A Min. Typ. Max. 4.0 - 1.9 16600 0.25 0.40 0.25 0.80 4.0 1.0 2.4 8.0 0.45 0.70 0.35 1.10 VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=200A,VGE=15V VCE=5V,IC=200mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 3 ohm RG= 2 ohm VGE= +/- 15V FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25C) Item Symbol Rated Value DC 1 ms Forward Current Characteristic s Unit 200 400 A Symbol Test Condition Min. Typ. Max. VF trr IF=200A,VGE=0V IF=200A,VGE=-10V,di/dt=400A/s - 1.9 0.2 2.4 0.3 Unit V s Test Condition Min. Typ. Max. Unit Junction to Case - - 0.125 0.24 C/W Peak Forward Voltage Reverse Recovery Time THERMAL CHARACTERISTICS Characteristic Thermal Impedance IF IFM Unit mA A V V pF Symbol IGBT DIODE Rth(j-c) http://store.iiic.cc/ PBMB200B12 Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Fig.1- Output Characteristics (Typical) TC=25 400 12V I C=100A 10V 15V Collector Current I C (A) 300 9V 200 8V 100 7V 0 0 2 TC=25 16 Collector to Emitter Voltage V CE (V) VGE =20V 4 6 8 14 200A 12 10 8 6 4 2 0 10 0 4 Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Collector to Emitter Voltage V CE (V) 10 8 6 4 2 12 16 700 14 600 12 500 10 8 400 VCE =600V 6 300 400V 200 4 200V 2 100 0 300 600 900 1200 Gate to Emitter Voltage V GE (V) Total Gate Charge Qg (nC) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) Fig.6- Collector Current vs. Switching Time (Typical) 100000 Capacitance C (pF) 16 RL=3 TC=25 0 20 50000 V GE =0V f=1MHZ TC=25 20000 Cies 10000 5000 Coes 2000 1000 0 1500 1.4 VCC=600V RG= 2.0 VGE =15V TC=25 1.2 Switching Time t (s) Collector to Emitter Voltage V CE (V) 12 8 20 1 tOFF 0.8 tf 0.6 0.4 500 Cres 200 100 0.1 0.2 0.5 1 2 5 10 20 50 100 200 0.2 0 tON tr 0 Collector to Emitter Voltage V CE (V) 50 100 Collector Current IC (A) http://store.iiic.cc/ 150 200 Gate to Emitter Voltage V GE (V) 200A 4 16 800 400A 14 0 12 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) TC=125 16 0 8 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) IC=100A 400A PBMB200B12 Fig.8- Forward Characteristics of Free Wheeling Diode (Typical) Fig.7- Series Gate Impedance vs. Switching Time (Typical) 400 10 VCC=600V IC=200A VGE =15V TC=25 TC=125 toff tr 2 Forward Current I F (A) Switching Time t (s) 5 TC=25 ton 1 tf 0.5 0.2 300 200 100 0.1 0.05 1 2 5 10 20 50 100 0 200 0 1 Series Gate Impedance R G () Fig.9- Reverse Recovery Characteristics (Typical) 3 4 Fig.10- Reverse Bias Safe Operating Area (Typical) 1000 1000 IF=200A TC=25 500 R G=2 V GE =15V TC125 500 200 Collector Current I C (A) 200 trr 100 50 20 IRrM 100 50 20 10 5 2 1 0.5 10 0.2 200 400 600 800 1000 0.1 1200 0 400 800 Fig.11- Transient Thermal Impedance 1 5x10 -1 2x10 FRD -1 IGBT 1x10 -1 5x10 -2 2x10 -2 1x10 -2 5x10 -3 2x10 -3 TC=25 1x10 -3 1 Shot Pulse 5x10 -4 10 -5 1200 Collector to Emitter Voltage V CE (V) -di/dt (A/s) (/W) 0 (J-C) 5 Transient Thermal Impedance Rth Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) 2 Forward Voltage V F (V) 10 -4 10 -3 10 -2 Time t (s) http://store.iiic.cc/ 10 -1 1 10 1 1600