BLS3135-20 TRAY - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product speciﬁcation 2000 Feb 01

DISCRETE SEMICONDUCTORS

BLS3135-20

Microwave power transistor

halfpage

M3D259

2000 Feb 01 2

Philips Semiconductors Product speciﬁcation

Microwave power transistor BLS3135-20

FEATURES

•Suitable for short and medium pulse applications

•Internal input and output matching networks for an easy

circuit design

•Emitter ballasting resistors improve ruggedness

•Gold metallization ensures excellent reliability

•Interdigitated emitter-base structure provides high

emitter efficiency

•Multicellgeometryimprovespowersharingandreduces

thermal resistance.

APPLICATIONS

•Commonbaseclass-Cpulsedpoweramplifiersforradar

applications in the 3.1 to 3.5 GHz range.

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in

a 2-lead rectangular flange package with a ceramic cap

(SOT422A) with the common base connected to the

flange.

PINNING - SOT422A

PIN DESCRIPTION

1 collector

2 emitter

3 base; connected to ﬂange

handbook, halfpage

MBK051

Fig.1 Simplified outline.

QUICK REFERENCE DATA

RF performance at Th=25°C in a common base class-C test circuit.

MODE OF OPERATION f

(GHz) VCB

(V) PL

(W) Gp

(dB) ηC

(%)

Pulsed, class-C 3.1 to 3.5 40 20 typ. 8 typ. 40

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.

2000 Feb 01 3

Philips Semiconductors Product speciﬁcation

Microwave power transistor BLS3135-20

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

Note

1. Equivalent thermal impedance under pulsed microwave operating conditions.

CHARACTERISTICS

Tj=25°C unless otherwise speciﬁed.

APPLICATION INFORMATION

RF performance at Th=25°C in a common-base test circuit.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −75 V

VCES collector-emitter voltage RBE =0 −75 V

VEBO emitter-base voltage open collector −2V

CM peak collector current tp≤100 µs; δ≤10% −2A

tot total power dissipation tp= 100 µs; δ= 10%; Tmb =25°C−80 W

Tstg storage temperature −65 +200 °C

Tjoperating junction temperature −200 °C

Tsld soldering temperature up to 0.2 mm from ceramic cap;

t≤10 s −235 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Zth j-h thermal impedance from junction to heatsink tp= 100 µs; δ= 10%; note 1 2 K/W

tp= 200 µs; δ= 10%; note 1 2.45 K/W

tp= 300 µs; δ= 10%; note 1 2.75 K/W

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V(BR)CBO collector-base breakdown voltage IC= 15 mA; open emitter 75 −V

V(BR)CES collector-emitter breakdown voltage IC= 15 mA; VBE =0 75 −V

CBO collector leakage current VCB = 40 V; IE=0 −0.5 mA

ICES collector leakage current VCE = 40 V; VBE =0 −1mA

EBO emitter leakage current VEB = 1.5 V; IC=0 −0.1 mA

hFE DC current gain VCB =5V; I

C= 1.5 A 40 −

MODE OF OPERATION f

(GHz) VCE

(V) PL

(W) Gp

(dB) ηC

(%)

Class-C; tp= 100 µs; δ= 10% 3.1 to 3.5 40 ≥20

typ. 22 ≥7

typ. 8 ≥35

typ. 40

2000 Feb 01 4

Philips Semiconductors Product speciﬁcation

Microwave power transistor BLS3135-20

handbook, halfpage

(1) (2)

(3)

3PD (W)

(W)

MCD863

Fig.2 Load power as a function of drive power;

typical values.

VCB = 40 V; class-C; tp= 100 µs; δ= 10%.

(1) f = 3.1 GHz.

(2) f = 3.3 GHz.

(3) f = 3.5 GHz.

handbook, halfpage

025

5101520

(W)

(dB)

MCD864

(3)

(1)

(2)

Fig.3 Power gain as a function of load power;

typical values.

VCB = 40 V; class-C; tp= 100 µs; δ= 10%.

(1) f = 3.1 GHz.

(2) f = 3.3 GHz.

(3) f = 3.5 GHz.

handbook, halfpage

025

5101520

(W)

ηC

(dB)

MCD865

(3)

(1)

(2)

Fig.4 Collector efficiency as a function of load

power; typical values.

VCB = 40 V; class-C; tp= 100 µs; δ= 10%.

(1) f = 3.1 GHz.

(2) f = 3.3 GHz.

(3) f = 3.5 GHz.

handbook, halfpage

(dB)

3.2 3.4

ηC

3.6

f (GHz)

ηC

(%)

MCD866

Fig.5 Power gain and efficiency as functions of

frequency; typical values.

VCB = 40 V; class-C; PL= 20 W; tp= 100 µs; δ= 10%.

2000 Feb 01 5

Philips Semiconductors Product speciﬁcation

Microwave power transistor BLS3135-20

handbook, halfpage

3 3.2 3.4

3.6

f (GHz)

(Ω)

−10

−5

MCD867

Fig.6 Input impedance as a function of frequency

(series components); typical values.

VCB = 40 V; class-C; PL=20W.

handbook, halfpage

3 3.2 3.4

3.6

f (GHz)

(Ω)

−10

−5

MCD868

Fig.7 Load impedance as a function of frequency

(series components); typical values.

VCB = 40 V; class-C; PL=20W.

2000 Feb 01 6

Philips Semiconductors Product speciﬁcation

Microwave power transistor BLS3135-20

handbook, full pagewidth

MCD869

30 30

Dimensions in mm.

The components are situated on one side of the copper-clad printed-circuit board with Duroid dielectric (εr= 2.2), thickness 0.38 mm.

The other side is unetched and serves as a ground plane.

C1 = C2 = 4.7 pF (ATC 100A).

Fig.8 Component layout for 3.1 to 3.5 GHz class-C test circuit.

2000 Feb 01 7

Philips Semiconductors Product speciﬁcation

Microwave power transistor BLS3135-20

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOT422A 99-03-29

0 5 10 mm

scale

Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT422A

UNIT Q

cD E

EFH p q

mm 0.13

0.08

5.21

4.95 10.29

10.03

9.93

9.68 8.76

8.51

10.29

10.03 1.58

1.47 19.18

17.65

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

3.43

3.18 16.51 22.99

22.73

9.91

9.65 0.25

0.76

5.72

4.83 3.35

2.92

inches 0.005

0.003

0.205

0.195 0.405

0.395

0.391

0.381 0.345

0.335

0.405

0.395 0.062

0.058 0.755

0.695

4.52

3.74

0.178

0.147 0.135

0.125 0.65 0.905

0.895 0.390

0.380 0.01 0.03

0.225

0.190 0.132

0.115

U2E1E

M M

w1AB

M M M

2000 Feb 01 8

Philips Semiconductors Product speciﬁcation

Microwave power transistor BLS3135-20

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data Sheet Status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

2000 Feb 01 9

Philips Semiconductors Product speciﬁcation

Microwave power transistor BLS3135-20

NOTES

2000 Feb 01 10

Philips Semiconductors Product speciﬁcation

Microwave power transistor BLS3135-20

NOTES

2000 Feb 01 11

Philips Semiconductors Product speciﬁcation

Microwave power transistor BLS3135-20

NOTES

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

2000 69

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Printed in The Netherlands 603516/01/pp12 Date of release: 2000 Feb 01 Document order number: 9397 750 06722