ZXMP6A17G 60V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -60V: RDS(on) = 0.125 : ID = -4.1A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT223 FEATURES * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * SOT223 package APPLICATIONS * DC-DC converters * Power management functions * Relay and solenoid driving * Motor control PINOUT ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMP6A17GTA 7" 12mm 1000 units ZXMP6A17GTC 13" 12mm 4000 units DEVICE MARKING Top View * ZXMP 6A17 ISSUE 1 - MAY 2005 1 SEMICONDUCTORS ZXMP6A17G ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS -60 V V GS 20 V Continuous Drain Current (V GS = -10V; (V GS = -10V; (V GS = -10V; T A =25C) ID -4.1 -3.3 -3.0 A Pulsed Drain Current (c) I DM -13.7 A -4.8 A Gate-Source Voltage T A =25C) (b) T A =70C) (b) (a) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (b) IS (c) I SM -13.7 A (a) PD 2.0 16 W mW/C Power Dissipation at T A =25C (b) Linear Derating Factor PD 3.9 31 W mW/C Operating and Storage Temperature Range T j :T stg -55 to +150 C VALUE UNIT Power Dissipation at T A =25C Linear Derating Factor THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a) R JA 62.5 C/W Junction to Ambient (b) R JA 32.2 C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature. ISSUE 1 - MAY 2005 SEMICONDUCTORS 2 ZXMP6A17G CHARACTERISTICS Max Power Dissipation (W) -ID Drain Current (A) R DS(on) 10 Limited 1 DC 1s 100ms 100m 10ms Single Pulse Tamb=25C 10m 1 1ms 100s 10 -VDS Drain-Source Voltage (V) 100 2.0 1.6 1.2 0.8 0.4 0.0 0 20 40 60 80 100 120 140 160 Temperature (C) Derating Curve Safe Operating Area 60 Tamb=25C MaximumPower (W) Thermal Resistance (C/W) 70 50 40 D=0.5 30 20 Single Pulse D=0.2 D=0.05 10 0 100 1m D=0.1 10m 100m 1 10 100 Single Pulse Tamb=25C 100 10 1 100 1m 1k Pulse Width (s) 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation ISSUE 1 - MAY 2005 3 SEMICONDUCTORS ZXMP6A17G ELECTRICAL CHARACTERISTICS (at TA = 25C unless otherwise stated) PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage V (BR)DSS -60 Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (1)(3) g fs Input Capacitance TYP. MAX. UNIT CONDITIONS STATIC V I D =-250A, V GS =0V -1 A V DS =-60V, V GS =0V 100 nA V I =-250A, V DS = V GS V GS =-10V, I D =-2.2A V GS =-4.5V, I D =-1.8A 4.7 S V DS =-15V,I D =-2.2A C iss 637 pF Output Capacitance C oss 70 pF Reverse Transfer Capacitance C rss 53 pF Turn-On Delay Time t d(on) 2.6 ns Rise Time tr 3.4 ns Turn-Off Delay Time t d(off) 26.2 ns Fall Time tf 11.3 ns Gate Charge Qg 9.8 nC Total Gate Charge Qg 17.7 nC Gate-Source Charge Q gs 1.6 nC Gate-Drain Charge Q gd 4.4 nC V SD -0.85 t rr Q rr DYNAMIC -1.0 V GS =20V, V DS =0V 0.125 0.190 D (3) SWITCHING V DS =-30V, V GS =0V, f=1MHz (2) (3) V DD =-30V, I D =-1A R G 6.0, V GS =-10V V DS =-30V,V GS =-5V, I D =-2.2A V DS =-30V,V GS =-10V, I D =-2.2A SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) -0.95 V T J =25C, I S =-2A, V GS =0V 25.1 ns T J =25C, I F =-1.7A, di/dt= 100A/s 27.2 nC NOTES (1) Measured under pulsed conditions. Width 300 s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - MAY 2005 SEMICONDUCTORS 4 ZXMP6A17G TYPICAL CHARACTERISTICS ISSUE 1 - MAY 2005 5 SEMICONDUCTORS ZXMP6A17G TYPICAL CHARACTERISTICS ISSUE 1 - MAY 2005 SEMICONDUCTORS 6 ZXMP6A17G PACKAGE OUTLINE PAD LAYOUT DETAILS PACKAGE DIMENSIONS DIM Millimeters Inches DIM Millimeters Min Max Inches Min Max Min Max Min Max A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287 b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146 C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 - D 6.30 6.70 0.248 0.264 - - - - - (c) Zetex Semiconductors plc 2005 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - MAY 2005 7 SEMICONDUCTORS