SEMICONDUCTORS
SUMMARY
V(BR)DSS = -60V: RDS(on) = 0.125 : ID= -4.1A
DESCRIPTION
ThisnewgenerationoftrenchMOSFETsfromZetexutilizesauniquestructurethat
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
·Low on-resistance
·Fast switching speed
·Low threshold
·Low gate drive
·SOT223 package
APPLICATIONS
·DC-DC converters
·Power management functions
·Relay and solenoid driving
·Motor control
DEVICE MARKING
·ZXMP
6A17
ZXMP6A17G
1
60V P-CHANNEL ENHANCEMENT MODE MOSFET
ISSUE 1 - MAY 2005
DEVICE REEL
SIZE TAPE
WIDTH QUANTITY
PER REEL
ZXMP6A17GTA 7” 12mm 1000 units
ZXMP6A17GTC 13” 12mm 4000 units
ORDERING INFORMATION
Top View
PINOUT
SOT223
ZXMP6A17G
SEMICONDUCTORS
2
ISSUE 1 - MAY 2005
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS -60 V
Gate-Source Voltage VGS ⫾20 V
Continuous Drain Current (VGS= -10V; TA=25°C)(b)
(VGS= -10V; TA=70°C)(b)
(VGS= -10V; TA=25°C)(a)
ID-4.1
-3.3
-3.0
A
Pulsed Drain Current (c) IDM -13.7 A
Continuous Source Current (Body Diode) (b) IS-4.8 A
Pulsed Source Current (Body Diode) (c) ISM -13.7 A
Power Dissipation at TA=25°C (a)
Linear Derating Factor PD2.0
16 W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor PD3.9
31 W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ABSOLUTE MAXIMUM RATING
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) RθJA 62.5 °C/W
Junction to Ambient (b) RθJA 32.2 °C/W
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.
ZXMP6A17G
SEMICONDUCTORS
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ISSUE 1 - MAY 2005
1 10 100
10m
100m
1
10
Single Pulse
Tamb=25°C
RDS(on)
Limited
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
-IDDrainCurrent (A)
-VDS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 160
0.0
0.4
0.8
1.2
1.6
2.0
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
50
60
70 Tamb=25°C
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
PulseWidth(s) 100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse
Tamb=25°C
Pulse Power Dissipation
PulseWidth(s)
MaximumPower (W)
CHARACTERISTICS
ZXMP6A17G
SEMICONDUCTORS
ISSUE 1 - MAY 2005
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage V(BR)DSS -60 V ID=-250µA, VGS=0V
Zero Gate Voltage Drain Current IDSS -1 ␮AV
DS=-60V, VGS=0V
Gate-Body Leakage IGSS 100 nA VGS=⫾20V, VDS=0V
Gate-Source Threshold Voltage VGS(th) -1.0 V ID=-250␮A, VDS=V
GS
Static Drain-Source On-State
Resistance (1) RDS(on) 0.125
0.190 ⍀
⍀VGS=-10V, ID=-2.2A
VGS=-4.5V, ID=-1.8A
Forward Transconductance (1)(3) gfs 4.7 S VDS=-15V,ID=-2.2A
DYNAMIC (3)
Input Capacitance Ciss 637 pF VDS=-30V, VGS=0V,
f=1MHz
Output Capacitance Coss 70 pF
Reverse Transfer Capacitance Crss 53 pF
SWITCHING (2) (3)
Turn-On Delay Time td(on) 2.6 ns
VDD =-30V, ID=-1A
RG6.0⍀,VGS=-10V
Rise Time tr3.4 ns
Turn-Off Delay Time td(off) 26.2 ns
Fall Time tf11.3 ns
Gate Charge Qg9.8 nC VDS=-30V,VGS=-5V,
ID=-2.2A
Total Gate Charge Qg17.7 nC VDS=-30V,VGS=-10V,
ID=-2.2A
Gate-Source Charge Qgs 1.6 nC
Gate-Drain Charge Qgd 4.4 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD -0.85 -0.95 V TJ=25⬚C, IS=-2A,
VGS=0V
Reverse Recovery Time (3) trr 25.1 ns TJ=25⬚C, IF=-1.7A,
di/dt= 100A/␮s
Reverse Recovery Charge (3) Qrr 27.2 nC
ELECTRICAL CHARACTERISTICS (at TA= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width ⱕ300µ s. Duty cycle ⱕ2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMP6A17G
SEMICONDUCTORS
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TYPICAL CHARACTERISTICS
TYPICAL CHARACTERISTICS
ZXMP6A17G
SEMICONDUCTORS
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ISSUE 1 - MAY 2005
ZXMP6A17G
SEMICONDUCTORS
ISSUE 1 - MAY 2005
7
Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
ZetexTechnologyPark,Chadderton
Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
Thispublicationisissuedtoprovideoutlineinformationonlywhich(unlessagreedbytheCompanyinwriting)maynotbeused,appliedorreproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
© Zetex Semiconductors plc 2005
PAD LAYOUT DETAILSPACKAGE OUTLINE
DIM Millimeters Inches DIM Millimeters Inches
Min Max Min Max Min Max Min Max
A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC
A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC
b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287
b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146
C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 -
D 6.30 6.70 0.248 0.264 - ----
PACKAGE DIMENSIONS