MBRS130LT3G, SBRS8130LT3G Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 30 VOLTS Features Very Low Forward Voltage Drop (0.395 Volts Max @ 1.0 A, TJ = 25C) Small Compact Surface Mountable Package with J-Bend Leads Highly Stable Oxide Passivated Junction Guard-Ring for Stress Protection ESD Ratings: Human Body Model = 3B (> 16000 V) Machine Model = C (> 400 V) AEC-Q101 Qualified and PPAP Capable SBRS8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements All Packages are Pb-Free* SMB CASE 403A MARKING DIAGRAM AYWW 1BL3G G Mechanical Characteristics Case: Epoxy, Molded Weight: 100 mg (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds 1BL3 A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb-Free Package (Note: Microdot may be in either location) Cathode Polarity Band ORDERING INFORMATION Device Package Shipping MBRS130LT3G SMB (Pb-Free) 2,500 / Tape & Reel SBRS8130LT3G SMB (Pb-Free) 2,500 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2012 January, 2012 - Rev. 9 1 Publication Order Number: MBRS130LT3/D MBRS130LT3G, SBRS8130LT3G MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 30 V Average Rectified Forward Current TL = 120C TL = 110C IF(AV) Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Operating Junction Temperature A 1.0 2.0 A 40 TJ -65 to +125 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction-to-Lead YJL Thermal Resistance, Junction-to-Ambient (TA = 25C, Min Pad, 1 oz copper) Junction-to-Ambient (TA = 25C, 1" Pad, 1 oz copper) RqJA Value Unit C/W 12 C/W 228.8 71.3 ELECTRICAL CHARACTERISTICS Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 1) (iF = 1.0 A, TJ = 25C) (iF = 2.0 A, TJ = 25C) VF Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 25C) (Rated dc Voltage, TJ = 100C) IR Value Unit V 0.395 0.445 mA 1.0 10 10 TJ = 100C 1 25C 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 VF, INSTANTANEOUS VOLTAGE (V) 0.7 IF, MAXIMUM INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%. 10 TJ = 100C 1 25C 0.1 0 Figure 1. Typical Forward Voltage 0.1 0.2 0.3 0.4 0.5 0.6 VF, MAXIMUM INSTANTANEOUS VOLTAGE (V) Figure 2. Maximum Forward Voltage http://onsemi.com 2 0.7 IR, IREVERSE CURRENT (mA) IR, IREVERSE CURRENT (mA) MBRS130LT3G, SBRS8130LT3G 100 10 TJ = 100C 1.0 25C 0.1 0.01 0.001 100 10 TJ = 100C 1.0 25C 0.1 0.01 0.001 0 3 6 9 12 15 18 21 24 27 0 30 3 6 VR, REVERSE VOLTAGE (V) PF(AV), AVERAGE POWER DISSIPATION (W) SQUARE WAVE 1 0.8 0.6 0.4 0.2 0 100 105 110 115 120 125 130 TC, CASE TEMPERATURE (C) 24 27 30 0.7 0.6 0.5 SQUARE 0.4 0.3 DC 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 6. Typical Power Dissipation NOTE: TYPICAL CAPACITANCE AT 0 V = 290 pF 350 300 250 200 150 100 50 0 4 21 0.8 400 0 18 0.9 Figure 5. Current Derating (Case) C, CAPACITANCE (pF) IF(AV), AVERAGE FORWARD CURRENT (A) DC 1.4 1.2 15 Figure 4. Typical Maximum Reverse Leakage Curent 2 1.6 12 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Leakage Current 1.8 9 8 12 16 20 24 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Typical Capacitance http://onsemi.com 3 28 32 EFFECTIVE TRANSIENT THERMAL RESISTANCE MBRS130LT3G, SBRS8130LT3G 1000 100 D = 0.5 0.2 0.1 0.05 10 0.02 0.01 1 0.1 0.000001 SINGLE PULSE 0.00001 0.0001 0.01 t, TIME (s) 0.001 0.1 1 10 100 1000 1 10 100 1000 EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 8. Thermal Response, Min Pad 100 D = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 SINGLE PULSE 0.1 0.000001 0.0001 0.00001 0.001 0.1 0.01 t, TIME (s) Figure 9. Thermal Response, 1 Inch Pad 2.0 250 1.8 225 1.6 POWER DISSIPATION (W) 275 qJA (C/W) 200 175 150 125 100 1.0 oz 75 2.0 oz 50 1.0 oz 1.4 1.2 1.0 0.8 0.6 0.4 0.2 25 0 2.0 oz Power based on TA = 25C 0 100 200 300 400 500 600 700 0 0 100 200 300 400 500 600 700 COPPER AREA (mm2) COPPER AREA (mm2) Figure 10. Thermal Resistance vs. Copper Area Figure 11. Power Dissipation vs. Copper Area http://onsemi.com 4 MBRS130LT3G, SBRS8130LT3G PACKAGE DIMENSIONS SMB CASE 403A-03 ISSUE H HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. E b DIM A A1 b c D E HE L L1 D POLARITY INDICATOR OPTIONAL AS NEEDED MIN 1.90 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.20 2.28 0.10 0.19 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.075 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.087 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.090 0.007 0.087 0.012 0.156 0.181 0.220 0.063 A L L1 A1 c SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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