BU406, BU407
NPN SILICON POWER TRANSISTORS
PRODUCT INFORMATION
1
AUGUST 1978 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
●7 A Continuous Collector Current
●15 A Peak Collector Current
●60 W at 25°C Case TemperatureB
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base. MDTRACA
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%.
RATINGSYMBOLVALUEUNIT
Collector-base voltage (IE = 0)BU406
BU407VCBO400
330V
Collector-emitter voltage (VBE = -2 V)BU406
BU407VCEX400
330V
Collector-emitter voltage (IB = 0)BU406
BU407VCEO200
150V
Emitter-base voltageVEB6V
Continuous collector current IC7A
Peak collector current (see Note 1)ICM15A
Continuous base current IB4A
Continuous device dissipation at (or below) 25°C case temperaturePtot60W
Operating junction temperature rangeTj-55 to +150°C
Storage temperature rangeTstg-55 to +150°C
BU406, BU407
NPN SILICON POWER TRANSISTORS
2
AUGUST 1978 - REVISED MARCH 1997
PRODUCT INFORMATION
NOTES: 2. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
3. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
4. To obtain ft the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [hFE] = 1.
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
V(BR)CEOCollector-emitter
breakdown voltageIC = 30 mAIB=0140V
ICESCollector-emitter
cut-off current
VCE= 400 V
VCE= 330 V
VCE= 250 V
VCE= 200 V
VCE= 250 V
VCE= 200 V
VBE=0
VBE=0
VBE=0
VBE=0
VBE=0
VBE=0TC = 150°C
TC = 150°C
BU406
BU407
BU406
BU407
BU406
BU407
5
5
0.1
0.1
1
1
mA
IEBOEmitter cut-off
currentVEB = 6 VIC=0 1 mA
hFEForward current
transfer ratioVCE = 10 V
VCE = 10 VIC= 4A
IC= 0.5A(see Notes 2 and 3)12
20
VCE(sat)Collector-emitter
saturation voltageIB = 0.5 AIC= 5A(see Notes 2 and 3)1V
VBE(sat)Base-emitter
saturation voltageIB = 0.5 AIC= 5A(see Notes 2 and 3)1.2V
ftCurrent gain
bandwidth productVCE = 5 VIC= 0.5Af = 1 MHz(see Note 4)6MHz
CobOutput capacitanceVCB = 20 VIE=0f = 1 MHz60 pF
thermal characteristics
PARAMETERMINTYPMAXUNIT
RθJCJunction to case thermal resistance2.08°C/W
RθJAJunction to free air thermal resistance 70 °C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETERTEST CONDITIONS †MINTYPMAXUNIT
tsStorage timeIC = 5 AIB(end) = 0.5A(see Figures 1 and 2)2.7µs
t(off)Turn off time750ns
3
AUGUST 1978 - REVISED MARCH 1997
BU406, BU407
NPN SILICON POWER TRANSISTORS
PRODUCT INFORMATION
PARAMETER MEASUREMENT INFORMATION
Figure 1. Inductive-Load Switching Test Circuit
Figure 2. Inductive-Load Switching Waveforms
Current
Probes
0
+4V
Vcc = 24V
47
ΩΩ
100
ΩΩ
100
ΩΩ
50
ΩΩ
22
ΩΩ
22
ΩΩ
1 k
ΩΩ
22
ΩΩ
5.6
ΩΩ
7.5
ΩΩ
µµ
H
14.8
µµ
H
240
5 pF
2N5337
2N6191
TIP31
TIP31
TIP31
TIP32
TIP32
TUT
BY205
BY205
OUTPUT
VBB+
V
BB-
SET
IB
INPUT
ts
IB(end)
µµ
s
64
42
µµ
s
50%
IB
IC
VCE
0
0
03 V
Vfly
toff
0.1 A
toff is the time for the collector
current IC to decrease to 0.1 A
after the collector to emitter
voltage VCE has risen 3 V into
its flyback excursion.
BU406, BU407
NPN SILICON POWER TRANSISTORS
4
AUGUST 1978 - REVISED MARCH 1997
PRODUCT INFORMATION
TYPICAL CHARACTERISTICS
Figure 3. Figure 4.
Figure 5.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·1 1·0 10
hFE - Typical DC Current Gain
0
10
20
30
40
50
60
70 TCD124AA
TC = 100°C
TC = 25°C
TC = -55°C
tp < 300 µs
d < 2%
VCE = 5 V
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·1 1·0 10
hFE - Typical DC Current Gain
0
10
20
30
40
50 TCD124AB
VCE = 1 V
VCE = 5 V
VCE = 10 V
TC = 25°C
tp < 300 µs
d < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
CASE TEMPERATURE
TC - Case Temperature - °C
-60 -40 -20 020 40 60 80 100 120 140 160
VCE(sat) - Collector-Emitter Saturation Voltage - V
0
0·1
0·2
0·3
0·4
0·5
0·6
0·7
0·8 TCD124AC
IC = 8 A
IB = 2 A
IC = 4 A
IB = 0.5 A
tp < 300 µs
d < 2%
5
AUGUST 1978 - REVISED MARCH 1997
BU406, BU407
NPN SILICON POWER TRANSISTORS
PRODUCT INFORMATION
MAXIMUM SAFE OPERATING REGIONS
Figure 6.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
VCE - Collector-Emitter Voltage - V
1·0 10 100 1000
IC - Collector Current - A
0.01
0·1
1·0
10 SAD124AA
BU407
BU406
BU406, BU407
NPN SILICON POWER TRANSISTORS
6
AUGUST 1978 - REVISED MARCH 1997
PRODUCT INFORMATION
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
TO220
ALL LINEAR DIMENSIONS IN MILLIMETERS
ø1,23
1,32
4,20
4,70
1 2 3
0,97
0,61
see Note C
see Note B
10,0
10,4
2,54
2,95
6,0
6,6
14,55
15,90
12,7
14,1
3,5
6,1
1,07
1,70
2,34
2,74
4,88
5,28
3,71
3,96
0,41
0,64
2,40
2,90
VERSION 2 VERSION 1
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
7
AUGUST 1978 - REVISED MARCH 1997
BU406, BU407
NPN SILICON POWER TRANSISTORS
PRODUCT INFORMATION
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
