SEMICONDUCTOR es TECHNICAL DATA 2N5581 2N5582 NPN Silicon CRYSTALONCS Small-Signal Transistors eae veloraes Highway Ronkor kerma, NY. 11776 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VoEO 50 Vee Collector-Base Voltage Vceo 75 Vdc Collector Current . ic 800 mAdc Z Device Dissipation Pr : @ T= 25C 500 mw : 2.28 mWrc Derate above 25C 2.0 Watts @ Tc = 25C 11.43 ne Derate above 25C mr CASE 26-03 Storage Tempsrature Tatg -65 to 200 C eee ) ELECTRICAL CHARACTERISTICS {Ta = 25C unless otherwise noted.) Characteristic | symbot [wn] ax Un OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage!) V(BR)CEO 50 ~ Vide (Ic = 10 mAde) Colector-Base Breakdown Voltage V(BR)CBO 75 _ Vde (Ig = 10 Ade) Collector Cutoff Current IcBO (Vp = 80 Vae) _ 10 nAde (Vop = 60 Vac, Ta = 150C) - 10 wAdc Emitter Cutoff Current lEBo (Veg = 4.0 Vae) 10 nAdc (Veg = 6.0 Vac) - 10 yAde 1) Pulsed Pulse Wieth 250 to 380 ys, Duty Cycle 1.0 10 2.0% (cantina)2N5581JAN, 2N5582JAN SERIES ELECTRICAL CHARACTERISTICS continued Ta = 25 unless otherwise noted.) Characteristic | Symbot Min | Max Unit ON CHARACTERISTICS OC Current Gain hee _ fig = 0.1 mAdc. Voge = 10 Vac) 2N5581 30 = {ig = 1.0 mAdc. VcgE = 10 Vdc) 35 a tig = 10 mAdc. VcE = 10 Vde} 40 (ic = 150 mAdc. VogE = 10 Vde)i 1? 40 120 (Ic = $00 MAde. Vog = 10 Ve) 1) 20 _ (Ig = 10 mAdc. Veg = 10 Vde. Ta = -85C) 15 7 ilg = 0.1 mAde. Vog = 10 Vde) 2N5582 a - (Ic = 1.0 mAdc. Veg = 10 Vde} 75 _ fig = 10 mAdc, Veg = 10 Vdc} 100 = tle = 180 mAdc. Veg = 10 Vdc)!1) 406 300 ic = 500 mAdc. Veg = 10 Vde)(1! 30 - Ig = 10 mAde, VcE = 10 Vde. Ta = -55 C) ae ~ Collector-Emitter Saturation Voltage VCEtsat) tlc = 150 mAdc. Ig = 15 mAdc) ~ 03 (Ig = 500 mAde. Ip = 50 mAde) _ 10 Base-Emitter Saturation Voltage! 1} VBE; sat) tig = 150 mAdc. tp = 15 mAdc) 06 12 (Ic = 500 mAdc. Ig = 50 mAde) = 2.0 SMALL-SIGNAL CHARACTERISTICS Output Capacitance (Vog = 10 Vdc. Ip = 0 t= 0.1 to 10 MHz) i Input Capacitance (Veg = 0.5 Vdc. Ic = 0.f = 0.1 to 1.0 MHz) [ Cibo a 25 pF Smaill-Signal Current Gain 2N5581 Me 30 _ _ (VCE = 10 Vdc. Ig = 1.0 mAdc. f = 1.0 KHz) 2N5582 50 = co Vde Cobo 7 8.0 pF Smalt-Signal Current Transfer Ratio, Magnitude thtei 25 (VCE = 20 Vdc, ic = 50 mAdc. f = 100 MHz) SWITCHING CHARACTERISTICS (See Figure 21) Saturated Turn-On Time ton = 35 ns totf [ 300 ns Saturated Turn-Off Time Nonsaturated Puise Response Time ton > toff ASSURANCE TESTING (Pre/Post Burn-in) Burn-in Conditions: Ta = 25, +3C, Veg = 30 Vde Pr = 400 mw y initial and End Point Limits Characteristics Tested Symbot Min | Max Unit IcBo | 10 rAdc Collector Cutoff Current (VoBp = 60 vde) DC Current Gaintti 2N5581 hee 40 120 _ I co = 150 MAdc. VCE = 10 Vde) 2N5582 100 300 Max ] | i Delta Collector Cutott Current SiCBO 7 i +100 | | | t f | Delta from Pre-Burn-In Measured Values Min *, of Initial Value or 250 coed whichever 's greater 4 of Initial Value Delta DC Current Gain!) Shree 15 fo Pula ise Width 255 9 5E as Day Cece te