DPG 20 C 300 PN V RRM = 300 V I FAV = 2x 10 A t rr = 35 ns HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPG 20 C 300 PN Backside: isolated Features / Advantages: Applications: Package: Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Housing: TO-220FP Conditions rIndustry standard outline rPlastic overmolded tab for r electrical isolation rIsolation Voltage 2500 V rUL registered E 72873 rEpoxy meets UL 94V-0 rRoHS compliant Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF forward voltage I FAV average forward current VF0 threshold voltage rF slope resistance thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current CJ reverse recovery time junction capacitance IXYS reserves the right to change limits, conditions and dimensions. typ. max. Unit 300 V VR = 300 V 1 A VR = 300 V TVJ = 150 C 0.06 mA TVJ = 25 C 1.27 V 1.45 V 0.98 V 1.17 V TC = 125C 10 A TVJ = 175C 0.74 V IF = 10 A IF = 20 A IF = 10 A IF = 20 A rectangular TVJ = 150 C d = 0.5 for power loss calculation only RthJC t rr min. TVJ = 25 C TVJ = 25 C -55 17.7 m 4.40 K/W 175 C TC = 25 C 35 W t = 10 ms (50 Hz), sine TVJ = 45C 140 A TVJ = 25 C 3 A IF = TVJ = 125C 5.5 A 10 A; VR = 200 V -di F /dt = 200 A/s VR = 150 V; f = 1 MHz TVJ = 25 C 35 ns TVJ = 125C 45 ns TVJ = 25 C 15 pF Data according to IEC 60747and per diode unless otherwise specified (c) 2009 IXYS all rights reserved http://store.iiic.cc/ 20090323a DPG 20 C 300 PN Ratings Symbol Definition min. Conditions I RMS RMS current RthCH thermal resistance case to heatsink Tstg storage temperature per pin typ. 1) max. Unit 35 0.50 -55 Weight A K/W 150 C 2 MD mounting torque FC mounting force with clip VISOL isolation voltage g 0.4 0.6 Nm 20 60 N t = 1 second 2500 t = 1 minute V 2000 V dS creapage distance on surface 1.07 mm dA striking distance through air 1.07 mm 1) IRMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Product Marking Part number Marking on product Logo DateCode Assembly Code Ordering Standard D P G 20 C 300 PN abcdef YYWW = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Common Cathode Reverse Voltage [V] TO-220ABFP (3) XXXXXX Part Name DPG 20 C 300 PN Similar Part DPG20C300PB IXYS reserves the right to change limits, conditions and dimensions. Marking on Product DPG20C300PN Package TO-220AB (3) Delivering Mode Tube Base Qty Code Key 50 503665 Voltage Class 300 Data according to IEC 60747and per diode unless otherwise specified (c) 2009 IXYS all rights reserved http://store.iiic.cc/ 20090323a DPG 20 C 300 PN Outlines TO-220FP OP A E A1 H Q D L1 A2 L b1 b c e IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per diode unless otherwise specified (c) 2009 IXYS all rights reserved http://store.iiic.cc/ 20090323a DPG 20 C 300 PN 30 0.4 12 TVJ = 125C VR = 200 V 25 TVJ = 25C 125C 150C 20 IF 10 IF = 5 A 0.3 20 A Qrr 15 [C] [A] 10 A 0.2 5A 8 IRR 10 A 20 A 6 [A] 10 4 0.1 5 TVJ = 125C 2 0 0.0 0.0 0.4 0.8 1.2 VF [V] 1.6 0 2.0 0 Fig. 1 Forward current IF versus forward voltage drop VF 1.4 VR = 200 V 100 200 300 400 -diF/dt [A/s] 500 0 100 200 300 400 500 -diF/dt [A/s] Fig. 3 Typ. reverse recovery current IRR versus -diF /dt Fig. 2 Typ. reverse recovery charge Qrr versus -diF /dt 100 12 400 9 300 TVJ = 125C VR = 200 V 1.2 80 1.0 60 0.8 trr [ns] Kf 0.6 IF = 20 A IRR 40 Qrr 20 VFR [V] 5A 0.0 40 80 120 TVJ [C] 160 100 200 300 400 500 0 -diF /dt [A/s] Fig. 5 Typ. reverse recovery time trr versus -diF /dt 10 [ns] 100 tfr 0 0 Fig. 4 Dynamic parameters Qrr, IRR versus TVJ 200 VFR 3 0 0 IF = 10 A VR = 200 V 10 A 0.4 0.2 tfr TVJ = 125C 6 100 200 300 400 -diF /dt [A/s] 0 500 Fig. 6 Typ. forward recovery voltage VFR and tfr versus diF /dt 10 TVJ = 125C VR = 200 V 8 IF = 5 A 6 Erec ZthJH 10 A 20 A [J] 1 [K/W] 4 Rthi [K/W] 0.3474 0.633 0.5473 2.162 0.7102 2 0 0 100 200 300 400 -diF/dt [A/s] 500 0.1 0.001 Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. 0.01 0.1 1 10 ti [s] 0.0003 0.0035 0.029 1.2 7.8 100 t [s] Fig. 8 Transient thermal resistance junction to case Data according to IEC 60747and per diode unless otherwise specified (c) 2009 IXYS all rights reserved http://store.iiic.cc/ 20090323a