Diodes Ultra High-Speed Switching Diode Arrays DA114/DA121/DA227 DAN202K/DAN202U/DAN212K/DAN222 DAP202K/DAP202U/DAP222 @Applications @xternal dimensions (Units: mm) Ultra high speed switching DAN202K / DAP202K / DAN212K 29402 _, 11402 @Features [ eee [on | (0.86 0.95 | 80. 1)Compact size | poe ee ee ce ye 4 2)High reliability Ath J pe 3)High speed (tr=1.5ns Typ.) | Hl fone, 4)Can be assembled automatically | apt - | nn t | | oat9 0.45 2858/1, 8 3 (All leads have the same dimensions) ' @Construction ROHM * SMD3 Silicon epitaxial planar FIAJ 2 SC-59 DA114 / DAN202U / DAP202U 2040.2 Piato1 0940.1 ~~ ey i 0.65 085 | 3 06 i es i coer Tee ii Fi Hl | o~os = Rig | Ho ot | o3t01 0164008 | =| (Aa pins have the same dimensions) S: ROHM : UMD3 EIAJ : SC-70 1.25+0.1 i DA227 ie | BA121 /DAN222/DAP222 0.349.110.2401. Ty me 4.60.2 Qo 1.00.1 o7to. | 3] 5 022835, Psa g2hes. ly 5404 BT Fil ae a ee an F_8s S| igre nat | +H vee Sl eo) o~01 Ve at ne eee 0.2401 0240.1 anand Are ou Jiggtos 0.16:0.05'| / ae [[OSTo08 = S| 19401 | ~ 3) ers 2040.2 : ROHM : UMD4 / ROHM : EMD3 34 RomDA114/DA121/DA227/DAN202K Diodes DAN202U/DAN212K/DAN222/DAP202K/DAP202U/DAP222 @internal circuit diagram 3 {23 a fas Vy (23 (3) (2) tf tt oc b 4 , (3) 3) (3) (4) rap) DAN202K DAP202K DA114 DA227 DAN202U DAP202U DA121 DAN222 DAP222 DAN212K High-speed switching diodes | Switching diodes @Absclute maximum ratings (Ta=25C) Peak reverse} DC reverse |Peak forward|Mean rectilying|Surge current| Power | Junction | Storage Type voltag voltage current current (1 us) ssp temperature temperature | TYPE Vam (V) 1 Va (VW) Hew (mA) | lo (mA) |heuge (A) Pd (mW) Ti CC) Tstg (C) DA114 80 80 300 100 4 200 150 55~150 N DA121 80 80 300 100 4 150 150 55~150 N DAN202K 80 80 300 100 4 200 150 55~150 N DAP202K 80 80 300 100 4 200 150 5~150 P DAN202U 80 80. 300 100 4 150 150 55~ 150 N DAP202U 80 80 300 100 4 150 150 55~-150 P DAN212K 80 80 300 100 4 200 150 ~55~150 N DAN222 80 80 300 400 4 150 150 5~150 N DAP222 80 80 300 100 4 150 150 ~55~150 P DA227 80 80 | 300 4 00 4 | 450 150 5~150 NDiodes @Electrical characteristics (Ta=25C) DA114/DA121/DA227/DAN202K DAN202U/DAN212K/DAN222/DAP202K/DAP202U/DAP222 Forward voltage | Reverse current /Capacitance between terminals Reverse recovery time Type | ve (vy | COD. | ta (a) | COND | Cr (pF) Cond. tr (ns) Cond. Max. | je (ma) | Max. | va (v) | Max. | va (v) of (MHz) | Max | ve (Vv) | te (ma) [Measurement DA114 1.2 100 0.1 70 3.5 6 1 4 6 5 Fig.8 DA121 1.2 100 0.1 70 3.5 6 1 4 6 5 Fig.8 DAN202K 1.2 100 0.1 70 3.5 6 1 4 6 5 Fig.8 DAP202K 1.2 100 0.1 70 3.5 6 1 4 6 5 Fig.8 DAN202U 1.2 100 0.1 70 3.5 6 1 4 6 5 Fig.8 DAP202U 1.2 100 0.1 70 3.5 6 1 4 6 5 Fig.8 DAN212K 1.2 100 0.1 70 3.5 6 1 4 6 5 Fig.8 DAN222 1.2 100 0.1 70 3.5 6 1 4 6 5 Fig.8 DAP222 1.2 100 01 70 3.5 6 1 4 6 5 Fig.8 DA227 1.2 100 0.1 70 3.5 6 1 4 6 5 Fig.8 @Electrical characteristic curves (Ta=25'C) ge 128 ss oO = 100 xz a @ 75 NS Zz 8 N\ & MN & 50 N 3 QO IN 25 x NI = 5 a) 0 2 50 75 100 125 150 AMBIENT TEMPERATURE Ta (C) Fig. 1 Power reduction curve FORWARD CURRENT: Ir (mA) 50 20 = ft 10 E Zz 2 x 3 1 a 0.5 faa uw > ul 02 c Ot9 0204 066 08 10 12 14 16 0 10 20 30 40 50 FORWARD VOLTAGE : Vr (V) REVERSE VOLTAGE: Va (V: Fig. 2 Forward current vs. Fig. 3 Reverse current vs. forward voltage reverse voltage characteristic (P TYPE) characteristic (P TYPE) 36Diodes DA114/DA121/DA227/DAN202K DAN202U/DAN212K/DAN222/DAP202K/DAP202U/DAP222 @Electrical characteristic curves (Ta=25C) a o 1 En 8 _ 3 Oo ao 5 20 5 ~ & = = 2 4 ~ 40 x 3 = & & = a ~ 2 oO 5B gy = 5 re G = 2 1 & @ B s w 8 & im) = oO x = a ie 3 3 < CG ot 2 6 D <= 0 02 04 06 08 10 12 14 16 0 10 20 30 4Q 50 Go 0 2 4 6 8 10 12 14 16 18 20 & pon FORWARD VOLTAGE: Ve (V; REVERSE VOLTAGE: Vr (V} REVERSE VOLTAGE: Va V} = Fig. 4 Forward current vs. Fig. 5 Reverse current vs. Fig. 6 Capacitance between c forward voltage reverse voltage terminals vs. 2 characteristic (N TYPE) characteristic (N TYPE) reverse voltage characteristic a 0.01 wF DUT, _ 10 Irs > & I : = 5a = a PULSE GENERATOR i S00 SAMPLING w OUTPUT 500 OSCILLOSCOPE = | | > m5 > 8 4 INPULSE uy x ud a 2 c S 4 a 100ns : "HS 0 1 2 3 4 5 6 7 8 Y 10 FORWARD CURRENT ir imA: OUTPULSE Fig. 7 Reverse recovery time vs. forward current characteristic Fig. 8 Reverse recovery time (tr) measurement circuit RoHmM 37