UTC 2SA1627 PNP EPITAXIAL S I L ICON T R A N S I S T O R
UTC UNISONIC TECHNOLOGIES CO. LTD 1
QW-R204-010,B
PNP EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
The UTC 2SA1627 is designed for general purpose
amplifier and high speed switching applications.
FEATURES
*High voltage
*Low collector saturation voltage.
*High-speed switching
TO-126
1
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -600 V
Collector-Emitter Voltage VCEO -600 V
Emitter-Base Voltage VEBO -7.0 V
Collector Power Dissipation PC 1.0 W
Collector Current(DC) Ic -1.0 A
Collector Current(PULSE) Icp *1 -2.0 A
Junction Temperature Tj 150 °C
Storage Temperature TSTG -55 to +150 °C
*1 : PW≦10ms,Duty Cycle≦50%
ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Cut-Off Current ICBO VCB= -600V,IE=0 -10 µA
Emitter Cut-Off Current IEBO VEB= -7.0V,Ic=0 -10 µA
DC Current Gain hFE1*2 VCE= -5.0V,Ic= -0.1A 30 58 120
DC Current Gain hFE2*2 VCE= -5.0V,Ic= -0.5A 5 19
Collector-Emitter Saturation Voltage VCE(sat)*2 Ic= -0.3A,IB= -0.06A -0.28 -0.5 V
Base-Emitter Saturation Voltage VBE(sat)*2 Ic= -0.3A,IB= -0.06A -0.85 -1.2 V
Gain Bandwidth Product fT VCE= -10V, IE=0.1A 10 28 MHz