Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor's system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDA24N50F N-Channel UniFETTM FRFET(R) MOSFET 500 V, 24 A, 200 m Features Description * RDS(on) = 166 m (Typ.) @ VGS = 10 V, ID = 12 A UniFETTM MOSFET is Fairchild Semiconductor's high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode's reverse recovery performance of UniFET FRFET(R) MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET's body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. * Low Gate Charge (Typ. 65 nC) * Low Crss (Typ. 32 pF) * 100% Avalanche Tested * Improved dv/dt Capability * RoHS Compliant Applications * PDP TV * Uninterruptible Power Supply * AC-DC Power Supply D G G D TO-3PN S S MOSFET Maximum Ratings TC = Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage 25oC unless otherwise noted. Parameter - Continuous (TC = 25oC) FDA24N50F 500 Unit V 30 V 24 ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 24 A EAR Repetitive Avalanche Energy (Note 1) 27 mJ dv/dt Peak Diode Recovery dv/dt 20 V/ns - Continuous (TC = 100oC) - Pulsed 14 (Note 1) 96 A (Note 2) 1872 mJ (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds TL A - Derate Above 25oC 270 W 2.2 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter RJC Thermal Resistance, Junction to Case, Max. RJA Thermal Resistance, Junction to Ambient, Max. (c)2012 Fairchild Semiconductor Corporation FDA24N50F Rev. C2 FDA24N50F 0.46 40 1 Unit oC/W www.fairchildsemi.com FDA24N50F -- N-Channel UniFETTM FRFET(R) MOSFET May 2014 Part Number Top Mark FDA24N50F FDA24N50F Package TO-3PN Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 500 - - V - 0.6 - V/oC Off Characteristics BVDSS BVDSS / TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 A, VGS = 0 V, TJ = 25oC ID = 250 A, Referenced to 25oC VDS = 500 V, VGS = 0 V - - 1 VDS = 400 V, TC = 125oC - - 10 VGS = 30 V, VDS = 0 V - - 100 A nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 A 3.0 - 5.0 V Static Drain to Source On Resistance VGS = 10 V, ID = 12 A - 0.166 0.2 gFS Forward Transconductance VDS = 20 V, ID = 12 A - 30 - S VDS = 25 V, VGS = 0 V, f = 1 MHz - 3240 4310 pF - 450 600 pF - 32 48 pF - 65 85 nC - 18 - nC - 26 - nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge VDS = 400 V, ID = 24 A, VGS = 10 V (Note 4,) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 250 V, ID = 24 A, VGS = 10 V, RG = 25 (Note 4) - 49 108 ns - 105 220 ns - 165 340 ns - 87 185 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 24 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 96 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 24 A - - 1.4 V trr Reverse Recovery Time - 264 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 24 A, dIF/dt = 100 A/s - 1.4 - C Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 6.5 mH, IAS = 24 A, VDD = 50 V, RG = 25 , starting TJ = 25C. 3. ISD 24 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C. 4. Essentially independent of operating temperature typical characteristics. (c)2012 Fairchild Semiconductor Corporation FDA24N50F Rev. C2 2 www.fairchildsemi.com FDA24N50F -- N-Channel UniFETTM FRFET(R) MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 100 VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 ID,Drain Current[A] ID,Drain Current[A] 60 o 150 C o -55 C 10 o 25 C *Notes: 1. 250s Pulse Test 1 *Notes: 1. VDS = 20V 2. 250s Pulse Test o 0.5 0.1 2. TC = 25 C 1 VDS,Drain-Source Voltage[V] 1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage IS, Reverse Drain Current [A] 0.25 VGS = 10V VGS = 20V 0.20 o 150 C o 10 *Note: TJ = 25 C 0 20 40 60 ID, Drain Current [A] 1 0.2 80 Figure 5. Capacitance Characteristics 6000 1.4 Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd *Note: 1. VGS = 0V 2. f = 1MHz 4500 Ciss 3000 Coss 1500 VDS = 100V VDS = 250V VDS = 400V 8 6 4 2 Crss 0 0.1 2. 250s Pulse Test 0.6 1.0 VSD, Body Diode Forward Voltage [V] 10 VGS, Gate-Source Voltage [V] 7500 25 C *Notes: 1. VGS = 0V o Capacitances [pF] 8 150 100 0.30 0.15 5 6 7 VGS,Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.35 RDS(ON) [], Drain-Source On-Resistance 4 0 1 10 VDS, Drain-Source Voltage [V] (c)2012 Fairchild Semiconductor Corporation FDA24N50F Rev. C2 30 3 *Note: ID = 24A 0 20 40 Qg, Total Gate Charge [nC] 60 70 www.fairchildsemi.com FDA24N50F -- N-Channel UniFETTM FRFET(R) MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250A 0.8 -75 -25 25 75 125 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 12A 0.5 0.0 -75 175 Figure 9. Maximum Safe Operating Area 200 100 2.5 -25 25 75 125 o TJ, Junction Temperature [ C] 175 Figure 10. Maximum Drain Current vs. Case Temperature 24 60s 10 ID, Drain Current [A] ID, Drain Current [A] 100s 1ms 10ms DC Operation in This Area is Limited by R DS(on) 1 *Notes: 0.1 o 18 12 6 1. TC = 25 C o 0.01 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 ZJC(t), Thermal Response [oC/W] Thermal Response [ZJC] Figure 11. Transient Thermal Response Curve 1 0.5 0.1 0.2 PDM 0.1 t1 0.05 0.01 0.02 o 0.01 1. ZJC(t) = 0.46 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) Single pulse 0.001 -5 10 t2 *Notes: -4 10 -3 -2 10 10 -1 10 0 10 1 10 [sec] tRectangular PulseDuration Duration [sec] 1, RectangularPulse (c)2012 Fairchild Semiconductor Corporation FDA24N50F Rev. C2 4 www.fairchildsemi.com FDA24N50F -- N-Channel UniFETTM FRFET(R) MOSFET Typical Performance Characteristics (Continued) FDA24N50F -- N-Channel UniFETTM FRFET(R) MOSFET IG = const. Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 13. Resistive Switching Test Circuit & Waveforms VGS Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms (c)2012 Fairchild Semiconductor Corporation FDA24N50F Rev. C2 5 www.fairchildsemi.com FDA24N50F -- N-Channel UniFETTM FRFET(R) MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms (c)2012 Fairchild Semiconductor Corporation FDA24N50F Rev. C2 6 www.fairchildsemi.com FDA24N50F -- N-Channel UniFETTM FRFET(R) MOSFET Mechanical Dimensions Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3PN-003 (c)2012 Fairchild Semiconductor Corporation FDA24N50F Rev. C2 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I68 (c)2012 Fairchild Semiconductor Corporation FDA24N50F Rev. C2 8 www.fairchildsemi.com FDA24N50F -- N-Channel UniFETTM FRFET(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPowerTM F-PFSTM (R)* (R) AX-CAP(R)* FRFET(R) (R) SM Global Power Resource PowerTrench BitSiCTM TinyBoost(R) GreenBridgeTM PowerXSTM Build it NowTM TinyBuck(R) Programmable Active DroopTM CorePLUSTM Green FPSTM TinyCalcTM (R) QFET CorePOWERTM Green FPSTM e-SeriesTM TinyLogic(R) CROSSVOLTTM QSTM GmaxTM TINYOPTOTM CTLTM Quiet SeriesTM GTOTM TinyPowerTM Current Transfer LogicTM RapidConfigureTM IntelliMAXTM TinyPWMTM DEUXPEED(R) ISOPLANARTM TM TinyWireTM Dual CoolTM Marking Small Speakers Sound Louder TranSiCTM Saving our world, 1mW/W/kW at a timeTM EcoSPARK(R) and BetterTM TriFault DetectTM SignalWiseTM EfficentMaxTM MegaBuckTM TRUECURRENT(R)* SmartMaxTM ESBCTM MICROCOUPLERTM SerDesTM SMART STARTTM MicroFETTM (R) Solutions for Your SuccessTM MicroPakTM SPM(R) MicroPak2TM Fairchild(R) UHC(R) STEALTHTM MillerDriveTM Fairchild Semiconductor(R) Ultra FRFETTM SuperFET(R) MotionMaxTM FACT Quiet SeriesTM UniFETTM SuperSOTTM-3 mWSaver(R) FACT(R) VCXTM OptoHiTTM SuperSOTTM-6 FAST(R) (R) VisualMaxTM OPTOLOGIC SuperSOTTM-8 FastvCoreTM (R) (R) VoltagePlusTM OPTOPLANAR SupreMOS FETBenchTM SyncFETTM XSTM FPSTM Sync-LockTM TM ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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