TrenchT2TM Power MOSFET IXTA70N075T2 IXTP70N075T2 VDSS ID25 = 75V = 70A 12m RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions VDSS TJ = 25C to 175C 75 V VDGR TJ = 25C to 175C, RGS = 1M 75 V VGSM Transient 20 V S Maximum Ratings ID25 TC = 25C IDM TC = 25C, pulse width limited by TJM IAR 70 A 180 A TC = 25C 40 A EAS TC = 25C 300 mJ PD TC = 25C 150 W -55 ... +175 C TJM 175 C Tstg -55 ... +175 C 300 260 C C 1.13 / 10 Nm/lb.in. 2.5 3.0 g g TJ TL 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Md Mounting torque (TO-220) Weight TO-263 TO-220 (TAB) TO-220 (IXTP) G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance 175C Operating Temperature High current handling capability ROHS Compliant High performance Trench Technology for extremely low RDS(on) Advantages Symbol Test Conditions (TJ = 25C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 75 VGS(th) VDS = VGS, ID = 250A 2.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) V 4.0 V 200 nA 2 A 200 A TJ = 150C VGS = 10V, ID = 25A, Notes 1, 2 (c) 2008 IXYS CORPORATION, All rights reserved 10 12 m Easy to mount Space savings High power density Synchronous Applications Automotive Engine Control Synchronous Buck Converter (for notebook systempower & General purpose point & load.) DC/DC Converters High Current Switching Applications Power Train Management Distributed Power Architecture DS99951A(3/08) IXTA70N075T2 IXTP70N075T2 Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 0.5 * ID25, Note 1 22 TO-263 (IXTA) Outline 36 S 2725 pF 334 pF 60 pF 15 ns 28 ns 31 ns tf 22 ns Qg(on) 46 nC 14 nC 7.5 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) Qgs Resistive Switching Times VGS = 10V, VDS = 38V, ID = 25A RG = 5 (External) VGS = 10V, VDS = 0.5 * VDSS, ID = 25A Qgd 1.00 C/W RthJC RthCH TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse width limited by TJM VSD IF = 25A, VGS = 0V, Note 1 trr IF = 50A, VGS = 0V IRM -di/dt = 100A/s VR = 38V QRM 0.86 70 A 280 A 1.0 V 48 ns 3.7 A 89 nC TO-220 (IXTP) Outline Notes: 1. Pulse test, t 300s; duty cycle, d 2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA70N075T2 IXTP70N075T2 Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 275 70 VGS = 15V 10V 9V 8V 60 225 10V 200 ID - Amperes 50 ID - Amperes VGS = 15V 250 7V 40 30 6V 20 9V 175 150 8V 125 100 7V 75 50 10 6V 25 5V 5V 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1.0 2 4 6 8 Fig. 3. Output Characteristics @ 150C 12 14 16 18 20 Fig. 4. RDS(on) Normalized to ID = 35A Value vs. Junction Temperature 70 2.6 VGS = 15V 10V 9V 8V 60 2.4 VGS = 10V 2.2 RDS(on) - Normalized 50 ID - Amperes 10 VDS - Volts VDS - Volts 7V 40 30 6V 20 2.0 I D = 70A 1.8 I D = 35A 1.6 1.4 1.2 1.0 0.8 10 5V 0.6 0 0.4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 35A Value vs. Drain Current 50 75 100 125 150 175 Fig. 6. Drain Current vs. Case Temperature 80 4.0 VGS = 10V 15V - - - 3.5 70 60 3.0 TJ = 175C ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade 2.5 2.0 1.5 50 40 30 20 1.0 10 TJ = 25C 0 0.5 0 20 40 60 80 100 120 ID - Amperes (c) 2008 IXYS CORPORATION, All rights reserved 140 160 180 200 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTA70N075T2 IXTP70N075T2 Fig. 7. Input Admittance Fig. 8. Transconductance 80 60 TJ = - 40C 70 50 g f s - Siemens ID - Amperes 60 50 40 TJ = 150C 25C - 40C 30 40 25C 30 150C 20 20 10 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 10 20 30 VGS - Volts 50 60 70 80 Fig. 10. Gate Charge 250 10 225 9 200 8 175 7 150 6 VDS = 37V I D = 25A VGS - Volts IS - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 125 100 75 I G = 10mA 5 4 3 TJ = 150C 50 2 TJ = 25C 25 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 5 10 15 20 25 30 35 40 45 50 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1,000 10,000 f = 1 MHz RDS(ON) Limit 1ms 1,000 Coss 100s 25s 10ms 100ms Ciss I D - Amperes Capacitance - PicoFarads 40 ID - Amperes 100 10 100 TJ = 175C Crss TC = 25C Single Pulse 10 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 VDS - Volts 100 IXTA70N075T2 IXTP70N075T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 32 32 RG = 5 30 30 TJ = 25C VDS = 38V 28 t r - Nanoseconds t r - Nanoseconds VGS = 10V 26 I D = 30A 24 22 I 28 RG = 5 VGS = 10V 26 VDS = 38V 24 = 10A D 22 20 TJ = 125C 20 18 25 35 45 55 65 75 85 95 105 115 10 125 12 14 16 18 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 28 VDS = 38V 24 22 I D = 10A, 30A 20 20 14 19 12 18 12 14 16 18 44 I D = 10A 36 20 32 I D = 30A 28 25 20 35 45 55 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current tf 80 48 70 44 40 TJ = 25C 21.0 36 20.5 32 TJ = 25C 20.0 28 tf TJ = 125C 19.0 14 16 18 20 115 24 125 td(off) - - - - 90 VDS = 38V 80 50 70 I D = 10A, 30A 40 60 30 50 20 40 I 12 105 100 60 t f - Nanoseconds 21.5 10 95 22 24 ID - Amperes (c) 2008 IXYS CORPORATION, All rights reserved 26 28 30 24 10 20 0 D = 30A 30 20 4 6 8 10 12 RG - Ohms 14 16 18 20 t d(off) - Nanoseconds VDS = 38V 19.5 85 TJ = 125C, VGS = 10V t d(off) - Nanoseconds t f - Nanoseconds td(off) - - - - 52 RG = 5, VGS = 10V 22.0 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 23.0 TJ = 125C 65 TJ - Degrees Centigrade RG - Ohms 22.5 40 21 16 10 48 RG = 5, VGS = 10V 22 25 15 td(off) - - - - 23 18 8 30 VDS = 38V 30 6 28 t d(off) - Nanoseconds t d(on) - Nanoseconds 40 4 26 52 tf 24 35 24 25 26 TJ = 125C, VGS = 10V 45 t r - Nanoseconds td(on) - - - - t f - Nanoseconds 50 22 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 55 tr 20 ID - Amperes IXTA70N075T2 IXTP70N075T2 Fig. 19. Maximum Transient Thermal Impedance Z (th)JC - C / W 10.00 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_70N075T2(V2)03-06-08-B