IXTP70N075T2 - Zilog - Pdf.Support

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 175°C75 V

VDGR TJ= 25°C to 175°C, RGS = 1MΩ75 V

VGSM Transient ± 20 V

ID25 TC= 25°C70 A

IDM TC= 25°C, pulse width limited by TJM 180 A

IAR TC= 25°C40 A

EAS TC= 25°C 300 mJ

PDTC= 25°C 150 W

TJ-55 ... +175 °C

TJM 175 °C

Tstg -55 ... +175 °C

TL1.6mm (0.062in.) from case for 10s 300 °C

Plastic body for 10 seconds 260 °C

MdMounting torque (TO-220) 1.13 / 10 Nm/lb.in.

Weight TO-263 2.5 g

TO-220 3.0 g

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 250μA 75 V

VGS(th) VDS = VGS, ID = 250μA 2.0 4.0 V

IGSS VGS = ± 20V, VDS = 0V ±200 nA

IDSS VDS = VDSS 2 μA

VGS = 0V TJ = 150°C 200 μA

RDS(on) VGS = 10V, ID = 25A, Notes 1, 2 10 12 mΩ

TrenchT2TM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

IXTA70N075T2

IXTP70N075T2

VDSS = 75V

ID25 = 70A

RDS(on) ≤≤

≤≤

≤ 12mΩΩ

ΩΩ

Ω

DS99951A(3/08)

G = Gate D = Drain

S = Source TAB = Drain

TO-263 (IXTA)

GS

(TAB)

TO-220 (IXTP)

GDS(TAB)

Features

International standard packages

Unclamped Inductive Switching (UIS)

rated

Low package inductance

175°C Operating Temperature

High current handling capability

ROHS Compliant

High performance Trench

Technology for extremely low RDS(on)

Advantages

Easy to mount

Space savings

High power density

Synchronous

Applications

Automotive Engine Control

Synchronous Buck Converter

(for notebook systempower & General

purpose point & load.)

DC/DC Converters

High Current Switching Applications

Power Train Management

 Distributed Power Architecture

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA70N075T2

IXTP70N075T2

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

gfs VDS = 10V, ID = 0.5 • ID25, Note 1 22 36 S

Ciss 2725 pF

Coss VGS = 0V, VDS = 25V, f = 1MHz 334 pF

Crss 60 pF

td(on) 15 ns

tr 28 ns

td(off) 31 ns

tf 22 ns

Qg(on) 46 nC

Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 25A 14 nC

Qgd 7.5 nC

RthJC 1.00 °C/W

RthCH TO-220 0.50 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

IS VGS = 0V 70 A

ISM Repetitive, Pulse width limited by TJM 280 A

VSD IF = 25A, VGS = 0V, Note 1 0.86 1.0 V

trr 48 ns

IRM 3.7 A

QRM 89 nC

Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

2. On through-hole packages, RDS(on) Kelvin test contact

location must be 5mm or less from the package body.

Resistive Switching Times

VGS = 10V, VDS = 38V, ID = 25A

RG = 5Ω (External)

IF = 50A, VGS = 0V

-di/dt = 100A/μs

VR = 38V

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

TO-263 (IXTA) Outline

Pins: 1 - Gate 2 - Drain

3 - Source 4 - Drain

TO-220 (IXTP) Outline

IXTA70N075T2

IXTP70N075T2

Fig. 1. Output Characteristics

@ 25º C

0

10

20

30

40

50

60

70

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

V

DS

- Volts

I

D

- Am peres

V

GS

= 15V

10V

9V

8V

7V

5V

6V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

25

50

75

100

125

150

175

200

225

250

275

0 2 4 6 8101214161820

V

DS

- Vo lts

I

D

- A mp ere s

V

GS

= 15V

8V

5V

6V

7V

9V

10V

Fig. 3. Output Characteristics

@ 150ºC

0

10

20

30

40

50

60

70

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

V

DS

- Volts

I

D

- A mpe res

V

GS

= 15V

10V

9V

8V

7

V

5

V

6

V

Fig. 4. R

DS(on)

Normalized to I

D

= 35A Val u e

vs. Ju ncti o n Temp er ature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

R

DS(on)

- N orma lize d

V

GS

= 10V

I

D

= 70A

I

D

= 35A

Fig. 5. R

DS(on)

Normalized to I

D

= 35A Value

vs. Drain Current

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0 20 40 60 80 100 120 140 160 180 200

I

D

- Amperes

R

DS(on)

- No rm a lized

V

GS

= 10V

15V - - -

T

J

= 175ºC

T

J

= 25ºC

Fig. 6. Drain Current vs. Case T emperature

0

10

20

30

40

50

60

70

80

-50 -25 0 25 50 75 100 125 150 175

T

C

- Degrees Centigrade

I

D

- A mp ere s

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA70N075T2

IXTP70N075T2

Fig. 7. Input Admittance

0

10

20

30

40

50

60

70

80

3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0

V

GS

- Vo lt s

I

D

- Am peres

T

J

= 150ºC

25ºC

- 40ºC

Fig. 8. T ransconductance

0

10

20

30

40

50

60

0 1020304050607080

I

D

- Amperes

g

f s - Siem ens

T

J

= - 40ºC

150ºC

25ºC

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

0

25

50

75

100

125

150

175

200

225

250

0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5

V

SD

- Volts

I

S

- Am peres

T

J

= 150ºC

T

J

= 25ºC

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0 5 10 15 20 25 30 35 40 45 50

Q

G

- NanoCoulombs

V

GS

- V o lts

V

DS

= 37V

I

D

= 25A

I

G

= 10mA

Fig. 11. Capacitance

10

100

1,000

10,000

0 5 10 15 20 25 30 35 40

V

DS

- Volts

Capacitance - PicoFarads

f

= 1 MHz

Ciss

Crss

Coss

Fig. 12. Forward-Bias Safe Operating Area

1

10

100

1,000

1 10 100

V

DS

- Vo lt s

I

D

- Am peres

T

J

= 175ºC

T

C

= 25ºC

Single Pulse

25µs1ms 100µs

10ms

100ms

R

DS(ON)

Limit

IXTA70N075T2

IXTP70N075T2

Fig. 14. R esistive Turn- o n

Rise Time vs. D rai n Cu r ren t

20

22

24

26

28

30

32

10 12 14 16 18 20 22 24 26 28 30

I

D

- Amp e res

t

r

- Nanoseconds

R

G

= 5Ω

V

GS

= 10V

V

DS

= 38V

T

J

= 25ºC

T

J

= 125ºC

Fig. 15. Resistive Turn-on

Switchi ng Times vs. Gate Resi stan ce

15

20

25

30

35

40

45

50

55

4 6 8 101214161820

R

G

- Ohms

t

r

- Nanoseconds

12

14

16

18

20

22

24

26

28

t

d(on)

- Nanoseconds

t r

td(on)

- - - -

T

J

= 125ºC, V

GS

= 10V

V

DS

= 38V

I

D

= 10A, 30A

Fi g . 16. R esi sti ve Tur n -o ff

Switching Times vs. Junction Temperature

18

19

20

21

22

23

24

25

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f

- N an o se co nd s

24

28

32

36

40

44

48

52

t

d(off)

- Na nose con ds

t f

td(off)

- - - -

R

G

= 5Ω, V

GS

= 10V

V

DS

= 38V

I

D

= 30A

I

D

= 10A

Fi g . 17. R esi sti ve Tur n -o ff

Switchi n g Ti mes vs. D r ai n C u r r en t

19.0

19.5

20.0

20.5

21.0

21.5

22.0

22.5

23.0

10 12 14 16 18 20 22 24 26 28 30

I

D

- Amperes

t

f

- Nanoseconds

20

24

28

32

36

40

44

48

52

t

d(off)

- Nanoseconds

t f

td(off)

- - - -

R

G

= 5Ω, V

GS

= 10V

V

DS

= 38V

T

J

= 25ºC

T

J

= 125ºC

T

J

= 25ºC

T

J

= 125ºC

Fi g. 13. Resi sti ve Tu r n-o n

Ri se Time vs. Juncti on Temper atu r e

18

20

22

24

26

28

30

32

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

r

- Nanoseconds

R

G

= 5Ω

V

GS

= 10V

V

DS

= 38V

I

D

= 10A

I

D

= 30A

Fi g . 18. R esi sti ve Tur n -o ff

Switching Times vs. Gate R esistan ce

0

10

20

30

40

50

60

70

80

4 6 8 101214161820

R

G

- Ohm s

t

f

- Nanoseconds

20

30

40

50

60

70

80

90

100

t

d(off)

- Nanoseconds

t f

td(off)

- - - -

T

J

= 125ºC, V

GS

= 10V

V

DS

= 38V

I

D

= 30A

I

D

= 10A, 30A

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA70N075T2

IXTP70N075T2

IXYS REF: T_70N075T2(V2)03-06-08-B

Fi g . 19. Maxi mu m Tr ansi en t Ther mal I mp ed ance

0.01

0.10

1.00

10.00

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W