1. Product profile
1.1 General description
50 W LDMOS power tra n sisto r for ba se station applicat ion s at freq ue n cie s from
2500 MHz to 2700 MHz.
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz
1.2 Features and benefits
Typica l 2-carrier W -CDMA perfor mance at fr equen cies of 2500 MHz an d 2700 MHz, a
supply voltage of 28 V and an IDq of 430 mA:
Average output power = 3 W
Power gain = 16.5 dB (typical)
Efficiency = 14.5 %
ACPR = −47 dBc
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2500 MHz to 2700 MHz)
Internally matched for ease of use
Integrated current sense
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
RF power amplifiers for base stations and multi carrier applications i n the 2500 MHz to
2700 MHz frequency range
BLF6G27L-50BN;
BLF6G27LS-50BN
Power LDMOS transistor
Rev. 2 — 7 April 2011 Product data sheet
Table 1. Typical performance
RF performance at Tcase = 25
°
C in a common source class-AB production test circuit.
Mode of operation f IDq VDS PL(AV) GpηDACPR
(MHz) (mA) (V) (W) (dB) (%) (dBc)
2-carrier W-CDMA 2500 to 2700 430 28 3 16.5 14.5 −47[1]
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Product data sheet Rev. 2 — 7 April 2011 2 of 16
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2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BLF6G27L-50BN (SOT1112A)
1drain
2gate
3source [1]
4, 5 sense drain
6, 7 sense gate
BLF6G27LS-50BN (SOT 1112B)
1drain
2gate
3source [1]
4, 5 sense drain
6, 7 sense gate
3
54
1
76
2
sym12
6
1
3
2 6, 7
4, 5
5
1
3
4
7
2
6
sym12
6
1
3
2 6, 7
4, 5
Table 3. Or dering information
Type number Package
Name Description Version
BLF6G27L-50BN - flanged ceramic package; 2 mounting holes; 6 leads SOT1112A
BLF6G27LS-50BN - earless flanged ceramic package; 6 leads SOT1112B
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 65 V
VGS gate-source voltage −0.5 +13 V
VGS(sense) sense gate-source voltage −0.5 +9 V
IDdrain current - 12 A
Tstg storage temperature −65 +150 °C
Tjjunction temperature - 200 °C
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Product data sheet Rev. 2 — 7 April 2011 3 of 16
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Power LDMOS transistor
5. Thermal characteristics
6. Characteristics
7. Application information
Table 5. Thermal char acteristics
Symbol Parameter Conditions Typ Unit
Rth(j-case) thermal resistance from junction to case Tcase =80°C; PL= 12.5 W (CW) 1.3 K/W
Table 6. Characteristics
Tj = 25
°
C per section; unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown
voltage VGS =0V; I
D=0.5mA65--V
VGS(th) gate-source threshold voltage VDS =10 V; I
D=72mA 1.4 1.9 2.4 V
IDq quiescent drain current sense transistor:
IDS= 9.1 mA;
VDS =26.5V
main transistor:
VDS =28V
380 430 480 mA
IDSS drain leakage current VGS =0V; V
DS =28V--1.5μA
IDSX drain cut-off current VGS =V
GS(th) +3.75 V;
VDS =10V 10 12 - A
IGSS gate leakage current VGS =11V; V
DS = 0 V - - 150 nA
gfs forward transcondu ctance VDS =10V; I
D=3.6A - 5.0 - S
RDS(on) drain-source on-state
resistance VGS =V
GS(th) + 3.75 V;
ID=2.52A -0.25-Ω
Table 7. 2-carrier W-CDMA application in formation
All testing performed in Class-AB production test circuit; test signal 3GPP; test model 1; 64 DPCH;
PAR = 8.4 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz; f1= 2500 MHz;
f2= 260 0 MHz; f3= 2700 MHz; RF performance at VDS = 28 V; IDq = 430 mA; Tcase =25
°
C; unless
otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
PL(AV) average output power - 3 - W
Gppower gain PL(AV) = 3 W 15.3 16.5 - dB
ηDdrain efficiency PL(AV) = 3 W 12.5 14.5 - %
ACPR adjacent channel power ratio PL(AV) = 3 W - −47 −43 dBc
IDq quiescent drain current VDD = 28 V - 430 - mA
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Product data sheet Rev. 2 — 7 April 2011 4 of 16
NXP Semiconductors BLF6G27L(S)-50BN
Power LDMOS transistor
7.1 Ruggedness in Class-AB operation
The BLF6G27L-50BN and BLF6G27LS-50BN are capable o f withstanding a load
mismatch corr es po nd in g to VSWR = 10 : 1 thro ug h all ph as es und er the follo win g
conditions: VDS =28V; I
Dq =430mA; P
L = 40 W (CW); f = 2500 MHz.
7.2 Single carrier IS-95
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13).
PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
Table 8. 1-carrier W-CDMA application in formation
All testing performed in Class-AB production test circuit; test signal 3GPP; test model 1; 64 DPCH;
PAR = 7.2 dB at 0.01 % probability on CCDF per carrier; f = 2700 MHz; RF performance at
VDS =28V; I
Dq = 430 mA; Tcase =25
°
C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
PAROoutput peak-to-average ratio PL(AV) = 16 W 4.1 4.7 5.3 dB
VDS = 28 V; IDq = 430 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
VDS = 28 V; IDq = 430 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 1. Single carrier IS-95 power gain as a function of
load power; typical values Fig 2. Single carrier IS-95 drain efficiency as a
function of load power; typical values
PL (W)
0252010 155
001aan474
15.5
16.0
15.0
16.5
17.0
Gp
(dB)
14.5
(1)
(2)
(3)
PL (W)
0252010 155
001aan478
20
30
10
40
50
ηD
(%)
0
(1)
(2)
(3)
BLF6G27L-50BN_6G27LS-50BN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 7 April 2011 5 of 16
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Power LDMOS transistor
7.3 Pulsed CW
VDS = 28 V; IDq = 430 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
VDS = 28 V; IDq = 430 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 3. Single carrier IS-95 ACPR at 885 kHz as a
function of load power; typical values Fig 4. Single carrier IS-95 ACPR at 1980 kHz as a
function of load power; typical values
PL (W)
0252010 155
001aan481
−50
−40
−60
−30
−20
ACPR885
(dBc)
−70
(1)
(2)
(3)
PL (W)
0252010 155
001aan484
−60
−45
−75
−30
−15
ACPR1980
(dBc)
−90
(1)
(2)
(3)
VDS = 28 V; IDq = 430 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
VDS = 28 V; IDq = 430 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 5. Single carrier IS-95 peak-to-average power
ratio as a function of load power;
typical values
Fig 6. Single carrier IS-95 peak power as a function
of load power; typical values
PL (W)
0252010 155
001aan485
4
6
2
8
10
PA R
0
(1)
(2)
(3)
PL (W)
0252010 155
001aan486
20
40
60
PL(M)
(W)
0
(1)
(2)
(3)
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Product data sheet Rev. 2 — 7 April 2011 6 of 16
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Power LDMOS transistor
VDS = 28 V; IDq = 430 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
VDS = 28 V; IDq = 430 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 7. Pulsed CW power gain as a function of load
power; typical values Fig 8. Pulsed CW drain efficiency as a function of
load power; typical values
PL (W)
0504020 3010
001aan487
14
15
13
16
17
Gp
(dB)
12
(1)
(2)
(3)
PL (W)
0504020 3010
001aan488
20
30
10
40
50
ηD
(%)
0
(1)
(2)
(3)
BLF6G27L-50BN_6G27LS-50BN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 7 April 2011 7 of 16
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Power LDMOS transistor
7.4 2-carrier W-CDMA
All testing performed in Class-AB production test circuit; test signal 3 GPP; test model 1;
64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF pe r carrier; carrier sp acing 5 MHz;
f1 = 2500 MHz; f2 = 2600 MHz; f3 = 2700 MHz; Tcase = 25 °C; unless otherwise specified.
VDS = 28 V; IDq = 430 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
VDS = 28 V; IDq = 430 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 9. 2-carrier W-CDMA power gain as a function of
load power; typical values Fig 10. 2-carrier W-CDMA drain efficiency as a
function of load power; typical values
PL (W)
0252010 155
001aan489
15.5
16.0
15.0
16.5
17.0
Gp
(dB)
14.5
(1)
(2)
(3)
PL (W)
0252010 155
001aan490
20
30
10
40
50
ηD
(%)
0
(1)
(2)
(3)
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Product data sheet Rev. 2 — 7 April 2011 8 of 16
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Power LDMOS transistor
VDS = 28 V; IDq = 430 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
VDS = 28 V; IDq = 430 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 11. 2-carrier W-CDMA ACPR at 5 MHz as a
function of load power; typical values Fig 12. 2-carrier W-CDMA ACPR at 10 MHz as a
function of load power; typical values
PL (W)
0252010 155
001aan491
−30
−20
−40
−10
0
ACPR5M
(dBc)
−50
(1)
(2)
(3)
PL (W)
0252010 155
001aan492
−40
−30
−50
−20
−10
ACPR10M
(dBc)
−60
(1)
(2)
(3)
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Product data sheet Rev. 2 — 7 April 2011 9 of 16
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Power LDMOS transistor
7.5 Single carrier W - CDMA
All testing performed in Class-AB production test circuit; test signal 3GPP; test model 1;
64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF per carrier; f = 2700 MHz;
Tcase =25°C; unless otherwise specified.
VDS = 28 V; IDq = 430 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
VDS = 28 V; IDq = 430 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 13. Single car rier W -CDMA p eak-to-ave rage power
ratio as a function of load power;
typical values
Fig 14. Single carrier W-CDMA peak output power as a
function of load power; typical values
PL (W)
0252010 155
001aan493
4.5
6.0
3.0
7.5
9.0
PA R
1.5
(1)
(2)
(3)
PL (W)
0252010 155
001aan494
40
60
20
80
100
PL(M)
(W)
0
(1)
(2)
(3)
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Power LDMOS transistor
8. Package outline
Fig 15. Package outline SOT1112A
References
Outline
version
European
projection Issue date
IEC JEDEC JEITA
SOT1112A
sot1112a_po
09-10-12
10-02-02
Unit(1)
mm
max
nom
min
4.65
3.76
1.14
0.89
0.18
0.10
9.65
9.40
9.65
9.40
9.65
9.40
1.14
0.89
17.12
16.10
3.30
2.92
9.91
9.65
0.25
A
Dimensions
F
langed ceramic package; 2 mounting holes; 6 leads SOT1112
A
bb
1
5.26
5.00
cDD
1E
5.97
5.72
64°
62°
ZαE1
9.65
9.40
FHL
3.00
2.69
pQ
(2)
1.70
1.45
q
15.24
U1
20.45
20.19
U2w1
0.51
inches
max
nom
min
0.183
0.148
0.045
0.035
0.007
0.004
0.38
0.37
0.38
0.37
0.38
0.37
0.045
0.035
0.674
0.634
0.130
0.115
0.39
0.38
0.01
0.207
0.197
0.235
0.225
64°
62°
0.38
0.37
0.118
0.106
0.067
0.057
0.6
0.805
0.795
0.02
w2
0 5 10 mm
scale
A
D
F
D1
L
E
Q
E1
c
B
C
A
q
U1
p
ZH
bb1
U2
AB
w1
Cw2
α
54 1
76 2
3
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
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Power LDMOS transistor
Fig 16. Package outline SOT1112B
References
Outline
version
European
projection Issue date
IEC JEDEC JEITA
SOT1112B
sot1112b_po
09-10-12
10-02-02
Unit(1)
mm
max
nom
min
4.65
3.76
1.14
0.89
0.18
0.10
9.65
9.40
9.65
9.40
9.65
9.40
1.14
0.89
17.12
16.10
9.91
9.65
0.51
A
Dimensions
E
arless flanged ceramic package; 6 leads SOT1112
B
bb
1
5.26
5.00
cDD
1E
11.20
10.95
64°
62°
Z1αE1
9.65
9.40
FHL
3.00
2.69
Q(2)
1.70
1.45
U1
9.91
9.65
U2w2
5.97
5.72
inches
max
nom
min
0.183
0.148
0.045
0.035
0.007
0.004
0.38
0.37
0.38
0.37
0.38
0.37
0.045
0.035
0.674
0.634
0.39
0.38
0.02
0.207
0.197
0.441
0.431
64°
62°
0.38
0.37
0.118
0.106
0.067
0.057
0.39
0.38
0.235
0.225
Z
0 5 10 mm
scale
A
D
F
D1
LD
E
Q
E1
c
U2
3
U1
Z1
ZH
bb1Dw2
α
54 1
76 2
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
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Product data sheet Rev. 2 — 7 April 2011 12 of 16
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Power LDMOS transistor
9. Handling information
10. Abbreviations
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 9. Abbreviatio ns
Acronym Description
3GPP 3rd Generation Partnership Project
CCDF Complementary Cumulative Distribution Function
CW Continuous Wave
DPCH Dedicated Physical CHannel
ESD ElectroStatic Discharge
LDMOS Laterally Diffused Metal-Oxide Semiconductor
PAR Peak-to-Average power Ratio
RF Radio Frequency
VSWR Voltage Standing-Wave Ratio
W-CDMA Wideband Code Division Multipl e Access
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Power LDMOS transistor
11. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLF6G27L-50BN_6G27LS-50BN v.2 20110407 Product data sheet - BLF6G27L-50BN_
6G27LS-50BN v.1
Modifications: •Section 1.1 on page 1: 45 W has been changed to 50 W.
•Table 1 on page 1: several changes have been made.
•The ESD warning has been moved to Section 9 on page 12.
•Section 1.2 on page 1: the value of efficiency has been changed.
•Section 1.3 on page 1: the term W-CDMA has been removed from the
sentence.
•Table 4 on page 2: the limiting values for ID have be en added.
•Table 5 on page 3: The value for Rth(j-case) has been changed.
•Table 6 on page 3: several changes have been made.
•Table 7 on page 3: several changes have been made.
•Table 8 on page 4: several changes have been made.
•Section 7.1 on page 4: several changes have been made.
•Section 7.2 on page 4: section has been added.
•Section 7.3 on page 5: section has been added.
•Section 7.4 on page 7: section has been added.
•Section 7.5 on page 9: section has been added.
•Section 9 on page 12: section has been added.
BLF6G27L-50BN_6G27LS-50BN v.1 20100916 Objective data sheet - -
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Product data sheet Rev. 2 — 7 April 2011 14 of 16
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Power LDMOS transistor
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semicond uctors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre va il.
Product specificat io n — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconduct ors does not give any
representations or warrant ies, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequ ential damages (including - wit hout limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Product specificat io n — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet .
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Custo mers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party custo m er(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the ter m s and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing i n this document may be interpreted or
construed as an of fer t o sell product s that is open for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or inte llectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulatio ns. Export might require a prior
authorization from national authorities.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contain s data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contain s the product specification.
BLF6G27L-50BN_6G27LS-50BN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 7 April 2011 15 of 16
NXP Semiconductors BLF6G27L(S)-50BN
Power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is auto motive qualified,
the product is not suitable for automotive use. It i s neither qua lified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automot ive specifications and standards, custome r
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such au tomotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconduct ors for an y
liability, damages or f ailed produ ct claims result ing from customer design an d
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
12.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respective ow ners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BLF6G27L(S)-50BN
Power LDMOS transistor
© NXP B.V. 2011. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 7 April 2011
Document identifier: BLF6G27L-50BN_6G27LS-50BN
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in Class-AB operation . . . . . . . . . 4
7.2 Single carrier IS-95. . . . . . . . . . . . . . . . . . . . . . 4
7.3 Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7.4 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 7
7.5 Single carrier W-CDMA . . . . . . . . . . . . . . . . . . 9
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
9 Handling information. . . . . . . . . . . . . . . . . . . . 12
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 12
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
13 Contact information. . . . . . . . . . . . . . . . . . . . . 15
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16