MMBTA13
MMBTA14
NPN Darlington
Amplifier Transistor
SOT-23
Suggested Solder
Pad Layout
Features
• Operating And Storage Temperatures –55OC to 150OC
• RθJA is 556OC/W (Mounted on FR-5 PCB 1.0”x0.75”x0.062”)
• Capable of 225mWatts of Power Dissipation
• Marking Code: MMBTA13 ----K2D; MMBTA14 ---- 1N
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .110 .120 2.80 3.04
B .083 .098 2.10 2.64
C .047 .055 1.20 1.40
D .035 .041 .89 1.03
E .070 .081 1.78 2.05
F .018 .024 .45 .60
G .0005 .0039 .013 .100
H .035 .044 .89 1.12
J .003 .007 .085 .180
K .015 .020 .37 .51
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage*
(IC=100uAdc, IB=0) 30 Vdc
V(BR)CBO Collector-Base Breakdown Voltage 30 Vdc
V(BR)EBO Emitter-Base Breakdown Voltage 10 Vdc
IC Collector Current-Continuous 300 mAdc
ICBO Collector Cutoff Current
(VCB=30Vdc, IE=0) 100 nAdc
IEBO Emitter Cutoff Current
(VEB=10Vdc, IC=0) 100 nAdc
ON CHARACTERISTICS
hFE
MMBTA13
MMBTA14
MMBTA13
MMBTA14
DC Current Gain*
(IC=10mAdc, VCE=5.0Vdc)
(IC=150mAdc, VCE=1.0Vdc)
5000
10000
10000
20000
VCE(sat) Collector-Emitter Saturation Voltage
(IC=100mAdc, IB=0.1mAdc) 1.5 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=100mAdc,VCE=5.0Vdc) 2.0 Vdc
SMALL-SIGNAL CHARACTERISTICS
fT Current Gain-Bandwidth Product
(IC=10mAdc, VCE=5.0Vdc, f=100MHz) 125 MHz
Cobo Output Capacitance
(VCB=10Vdc, IE=0, f=1.0MHz) 8.0 pF
Cibo Input Capacitance
(VBE=0.5Vdc, IC=0, f=1.0MHz) 15 pF
SWITCHING CHARACTERISTICS
td Delay Time (VCC=30Vdc, VBE=0.5Vdc 10 ns
tr Rise Time IC=150mAdc, IB1=15mAdc) 25 ns
ts Storage Time (VCC=30Vdc, IC=150mAdc 225 ns
tf Fall Time IB1=IB2=15mAdc) 60 ns
2.000
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omponents
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