BSP321P
SIPMOS® Small-Signal-Transistor
Features
• P-Channel
• Enhancement mode
• Normal level
• Avalanche rated
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTC=25 °C A
TC=70 °C
Pulsed drain current ID,pulse TC=25 °C
Avalanche energy, single pulse EAS ID=-0.98 A, RGS=25 ΩmJ
Gate source voltage VGS V
Power dissipation Ptot TC=25 °C W
Operating and storage temperature Tj, Tstg °C
ESD Class JESD22-A114-HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
-0.98
-0.79
1.8
Value
57
-3.9
55/150/56
-55 ... 150
±20
260 °C
1A (250V to 500V)
VDS -100 V
RDS(on),max 900 mΩ
ID-0.98 A
Product Summary
Type Package Tape and Reel Information Marking Lead free Packing
BSP321P PG-SOT-223 L6327: 1000 pcs/reel BSP321P Yes Non dry
PG-SOT-223
Rev 1.04 page 1 2011-04-05
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BSP321P
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - ambient RthJA
minimal footprint,
steady state - - 115
6 cm2 cooling area1),
steady state --70
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=-250 µA -100 - - V
Gate threshold voltage VGS(th) VDS=VGS,ID=-380 µA -2.1 -3.0 -4
Zero gate voltage drain current IDSS VDS=-100 V, VGS=0 V,
Tj=25 °C - -0.1 -1 µA
VDS=-100 V, VGS=0 V,
Tj=150 °C - -10 -100
Gate-source leakage current IGSS VGS=-20 V, VDS=0 V - -10 -100 nA
Drain-source on-state resistance RDS(on) VGS=-10 V, ID=-0.98 A - 689 900 mΩ
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=-0.79 A 0.6 1.2 - S
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Values
Rev 1.04 page 2 2011-04-05
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BSP321P
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss - 240 319 pF
Output capacitance Coss -6282
Reverse transfer capacitance Crss -2842
Turn-on delay time td(on) - 5.9 8.8 ns
Rise time tr- 4.4 6.6
Turn-off delay time td(off) - 16.5 24.7
Fall time tf- 8.5 12.7
Gate Char
g
e Characteristics2)
Gate to source charge Qgs - 1.1 1.4 nC
Gate to drain charge Qgd -46
Gate charge total Qg-912
Gate plateau voltage Vplateau - 4.5 - V
Reverse Diode
Diode continuous forward current IS- - -0.98 A
Diode pulse current IS,pulse - - -3.9
Diode forward voltage VSD VGS=0 V, IF=0.98 A,
Tj=25 °C - 0.84 1.2 V
Reverse recovery time trr -47-ns
Reverse recovery charge Qrr -96-nC
2) See figure 16 for gate charge parameter definition
TC=25 °C
Values
VGS=0 V, VDS=-25 V,
f=1 MHz
VDD=-50 V, VGS=-
10 V, ID=-0.98 A,
RG=6 Ω
VDD=-80 V, ID=-
0.98 A, VGS=0 to -10 V
VR=50 V, IF=|IS|,
diF/dt=100 A/µs
Rev 1.04 page 3 2011-04-05
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BSP321P
1 Power dissipation 2 Drain current
Ptot=f(TC)ID=f(TC); |VGS|≥10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25 °C; D=0 ZthJC=f(tp)
parameter: tpparameter: D=tp/T
100 µs
1 ms
10 ms
100 ms
DC
103
102
101
100
101
100
10-1
10-2
-VDS [V]
-ID [A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
102
101
100
10-1
10-2
10-3
10-4
10-5
102
101
100
10-1
tp [s]
ZthJS [K/W]
0
0.5
1
1.5
2
0 40 80 120 160
TA [°C]
Ptot [W]
0
0.2
0.4
0.6
0.8
1
0 40 80 120 160
TA [°C]
-ID [A]
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BSP321P
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
-4 V
-4.5 V
-5 V
-6 V
-7 V
-8 V
-10 V
0.4
0.8
1.2
1.6
2
01234
-ID [A]
RDS(on) [Ω]
25 °C
125 °C
0
1
2
3
4
02468
-VGS [V]
-ID [A]
0
1
2
3
01234
-ID [A]
gfs [S]
-4 V
-4.5 V
-5 V
-6 V
-7 V
-10 V
0
1
2
3
4
0246810
-VDS [V]
-ID [A]
Rev 1.04 page 5 2011-04-05
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BSP321P
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=-0.98 A; VGS=-10 V VGS(th)=f(Tj); VGS=VDS; ID=-380 µA
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ.
98 %
0
0.5
1
1.5
2
2.5
-60 -20 20 60 100 140
Tj [°C]
RDS(on) [Ω]
Ciss
Coss
Crss
103
102
101
0 20406080100
-VDS [V]
C [pF]
typ.
min.
max.
1
2
3
4
5
-60 -20 20 60 100 140
Tj [°C]
-VGS(th) [V]
25 °C, typ
150 °C, typ
25 °C, 98%
150 °C, 98%
101
100
10-1
10-2
0 0.5 1 1.5
-VSD [V]
IF [A]
Rev 1.04 page 6 2011-04-05
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BSP321P
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 ΩVGS=f(Qgate); ID=-0.98 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=-250 µA
90
95
100
105
110
115
120
-60 -20 20 60 100 140
Tj [°C]
-VBR(DSS) [V]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
25 °C
100 °C
125 °C
103
102
101
100
100
10-1
tAV [µs]
-IAV [A]
20 V
50 V
80 V
0
2
4
6
8
10
12
0246810
-Qgate [nC]
-VGS [V]
Rev 1.04 page 7 2011-04-05
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BSP321P
Package Outline: PG-SOT-223
Footprint: Packaging:
Dimensions in mm
Rev 1.04 page 8 2011-04-05
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BSP321P
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
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