V
RRM
= 50 V - 400 V
I
F
= 6 A
Features
• High Surge Capability DO-4 Package
• Types up to 400 V V
RRM
Parameter Symbol 1N3879 (R) 1N3880 (R) 1N3881 (R) 1N3882 (R) Unit
Re
p
etitive
p
eak reverse
V
50
100
200
300
V
1N3879 thru 1N3883R
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
Silicon Fast
Recover
y
Diode
1N3883 (R)
400
pp
voltage
V
RRM
50
100
200
300
V
RMS reverse voltage V
RMS
35 70 140 210 V
DC blocking voltage V
DC
50 100 200 300 V
Continuous forward current I
F
66 66 A
Operating temperature T
j
-65 to 150 -65 to 150 -65 to 150 -65 to 150 °C
Storage temperature T
stg
-65 to 175 -65 to 175 -65 to 175 -65 to 175 °C
Parameter Symbol 1N3879 (R) 1N3880 (R) 1N3881 (R) 1N3882 (R) Unit
Diode forward voltage 1.4 1.4 1.4 1.4
15 15 15 15 μA
33 33 mA
Recovery Time
Maximum reverse recovery
time T
RR
200 200 200 200 nS
Thermal characteristics
Thermal resistance, junction
- case R
thJC
2.5 2.5 2.5 2.5 °C/W
1N3883 (R)
2.5
280
6
400
90
15
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
V
R
= 50 V, T
j
= 150 °C
V
3
200
1.4
V
R
= 50 V, T
j
= 25 °C
I
F
= 6 A, T
j
= 25 °C
T
C
≤ 100 °C
Conditions
90 90
T
C
= 25 °C, t
p
= 8.3 ms
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
A
Reverse current I
R
V
F
90 90
-65 to 150
-65 to 175
400
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1N3879 thru 1N3883R
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