2SK2638-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS IAR *2 EAS *1 PD Tch Tstg Ratings 450 10 40 35 10 86.2 50 +150 -55 to +150 Unit V A A V A mJ W C C Drain(D) ew n for *1 L=1.58mH, Vcc=45V . de Gate(G) n sig Source(S) < *2 Tch=150C nd e mm Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current N Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge eco r ot Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Min. Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=450V VGS=0V VGS=35V VDS=0V ID=5A VGS=10V 450 3.5 Tch=25C Tch=125C ID=5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=10A VGS=10V 3 RGS=10 L=100 H Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C Typ. Max. 4.0 4.5 10 500 0.2 1.0 10 100 0.58 0.65 6 950 1450 180 270 80 120 25 40 70 110 70 110 50 80 10 1.1 400 5.0 1.65 Units V V A mA nA S pF ns A V ns C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. Units 2.5 62.5 C/W C/W 1 2SK2638-01MR FUJI POWER MOSFET Characteristics Power Dissipation PD=f(Tc) Safe operating area ID=f(VDS):D=0.01,Tc=25C 70 60 50 10 1 DC t=0.01 s 1 s 10 s ID [A] PD [W] 40 30 100 s 10 0 1ms 20 t D= 10 t T 10ms T 0 0 50 100 10 150 100ms -1 10 0 10 1 10 o 2 10 3 VDS [V] Tc [ C] Typical output characteristics Typical transfer characteristic ID=f(VDS):80s Pulse test,Tch=25C ID=f(VGS):80s Pulse test,VDS=25V,Tch=25C 30 10 1 10V 20 ID [A] ID [A] 10 nd e mm 10 n sig ew n for 8V 15 7V 10 . de VGS=20V 25 0 -1 6.5V 5 o c e r 6V 0 0 10 t No 20 5.5V 5V 10 30 -2 0 1 2 3 4 5 6 7 8 9 10 VGS [V] VDS [V] Typical forward transconductance Avalanche energy derating gfs=f(ID):80s Pulse test,VDS=25V,Tch=25C Eas=f(starting Tch):Vcc=45V,IAV=10A 100 80 10 1 10 Eas [mJ] gfs [s] 60 0 40 20 10 0 -1 10 -1 10 0 10 1 0 50 100 150 o ID [A] Starting Tch [ C] http://store.iiic.cc/ 2 2SK2638-01MR FUJI POWER MOSFET Drain-source on-state resistance RDS(on)=f(Tch):ID=5A,VGS=10V 2.0 6.0 Gate threshold voltage VGS(th)=f(Tch):ID=1mA,VDS=VGS 5.0 1.5 max. VGS(th) [V] RDS(on) [ ] 4.0 max. 1.0 typ. typ. min. 3.0 2.0 0.5 1.0 0.0 0.0 -50 0 50 100 150 -50 0 50 100 150 o Tch [ C] o Tch [ C] Typical capacitances C=f(VDS):VGS=0V,f=1MHz Typical gate charge characteristic VGS=f(Qg):ID=10A,Tch=25C 40 400 10n Vcc=360V V 90 c= V Vc 225 V 0 36 350 300 30 200 20 n sig Ciss nd e mm 15 150 100 90V Coss 100p Crss 10 50 0 0 ew n for C [F] 25 VGS [V] 20 40 ot N 60 80 o c e r 100 120 5 0 140 10p 10 -2 Qg [nC] 10 -1 10 0 10 1 10 2 VDS [V] Forward characteristic of reverse of diode IF=f(VSD):80s Pulse test,VGS=0V 10 1 o Tch=25 C typ. IF [A] VDS [V] 1n 250 225V . de 35 10 0 10 -1 10 -2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD [V] http://store.iiic.cc/ 3 2SK2638-01MR 1 FUJI POWER MOSFET Transient thermal impedande Zthch=f(t) parameter:D=t/T 10 D=0.5 0 Zthch-c [K/W] 10 0.2 0.1 0.05 -1 10 0.02 t D= 0.01 t T T 0 -2 10 -5 10 -4 -3 10 10 -2 10 -1 10 0 10 1 10 t [s] de ew n for . n sig nd e mm t No o c e r http://store.iiic.cc/ 4