PD-97324 RevA
IRAM136-1060BS
Series
10A, 600V
Integrated Power Hybrid IC for
App
liance Motor Drive A
pp
lications
with Internal Shunt Resistor
Description
International Rectifier's IRAM136-1060BS is a 10A, 600V Integrated Power Hybrid IC designed for advanced
Appliance Motor Drives applications. Typical applications include energy efficient Washing Machine, Fans,
Air Conditions and Refrigerator Compressor Drivers. This module offers an extremely compact, high
performance AC motor-driver in an isolated package that simplifies design. Several built-in protection
features such as over current, temperature monitoring, shoot through prevention and under voltage lockout
makes this a very robust solution. The combination of highly efficient Trench IGBT technology and the
industry benchmark 3-phase HVIC driver (3.3V/5V input compatible) and a fully isolated thermally enhanced
package makes this a highly competitive solution. The compact Single in line (SIP05) package minimizes
PCB space.
Features
x Internal Shunt Resistor and current feedback
x Integrated gate drivers and bootstrap diodes
x Temperature feedback
x Programmable over current protection pin
x High efficiency Trench IGBT technology
x Under-voltage lockout for all channels
x Matched propagation delay for all channels
x 3.3V/5V Schmitt-triggered input logic
x Cross-conduction prevention logic
x Motor Power range 0.25~0.75kW / 85~253 Vac
x Isolation 2000VRMS min and CTI> 600
Absolute Maximum Ratings
V
CES
/ V
RRM
IGBT/ FW Diode Blocking Voltage 600
V
+
Positive Bus Input Voltage 450
I
o
@ T
C
=25°C RMS Phase Current (Note 1) 10
I
o
@ T
C
=100°C RMS Phase Current (Note 1) 5
I
pk
Maximum Peak Phase Current (Note 2) 13
F
p
Maximum PWM Carrier Frequency 20 kHz
P
d
Maximum Power dissipation per IGBT @ T
C
=25°C 25 W
V
ISO
Isolation Voltage (1min) 2000 V
RMS
T
J
(IGBT & Diode & IC) Maximum Operating Junction Temperature +150
T
C
Operating Case Temperature Range -20 to +100
T
STG
Storage Temperature Range -40 to +125
T Mounting torque Range (M3 screw) 0.8 to 1.0 Nm
Note 1: Sinusoidal Modulation at V
+
=400V, T
J
=150°C, F
PWM
=16kHz, Modulation Depth=0.8, PF=0.6, See Figure 3.
Note 2: t
P
<100ms, TC=25°C, F
PWM
=16kHz.
V
A
°C
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IRAM136-1060BS
Internal Electrical Schematic – IRAM136-1060BS
V+ (13)
V- (16)
U, VS1 (10)
V, VS2 (6)
W, VS3 (2)
23 VS1
24 HO1
25 VB1
1 VCC
2 HIN1
3 HIN2
4 HIN3 LIN1
5
LIN2
6
LIN3
7
F
8
ITRIP
9
EN
10
RCIN
11
VSS
12
COM 13
LO1 16
LO3 14
LO2 15
22
VB2
21
HO2
20
VS2
19
VB3
18
HO3
17
VS3
Driver IC
VB1 (9)
VB2 (5)
VB3 (1)
HIN1 (17)
HIN2 (18)
HIN3 (19)
LIN1 (20)
LIN2 (21)
LIN3 (22)
I_FB (24)
VTH (29)
VCC (25)
VSS (26)
Q1
Q4
Q2 Q3
Q5 Q6
D1
D4
D2 D3
D5 D6
R1
R4
R2 R3
R5 R6
R13
R12
R10
D7 D8 D9
C1
C2
C3
C4
C7
FLT/EN (23)
ISD (27)
RCIN (28)
R8
R9
C6
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IRAM136-1060BS
Absolute Maximum Ratings (Continued)
Symbol Parameter Min Max Units Conditions
P
BR Peak
Bootstrap Resistor Peak Power
(Single Pulse) --- 15.0 W t
P
=100μs, T
C
=100°C
ESR / ERJ series
V
S1,2,3
High side floating supply offset
voltage V
B1,2,3
- 25 V
B1,2,3
+0.3 V
V
B1,2,3
High side floating supply voltage -0.3 600 V
V
CC
Low Side and logic fixed supply
voltage -0.3 20 V
V
IN
Input voltage LIN, HIN, I
Trip
-0.3
Lower of
(V
SS
+15V) or
V
CC
+0.3V
V
Inverter Section Electrical Characteristics @T
J
= 25°C
Symbol Parameter Min Typ Max Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown
Voltage 600 --- --- V V
IN
=0V, I
C
=250μA
V
(BR)CES
/ T Temperature Coeff. Of
Breakdown Voltage --- 0.3 --- V/°C V
IN
=0V, I
C
=250μA
(25°C - 150°C)
--- 1.5 1.7 I
C
=5A, T
J
=25°C
--- 1.7 --- I
C
=5A, T
J
=150°C
--- 5 80 V
IN
=0V, V
+
=600V
--- 80 --- V
IN
=0V, V
+
=600V, T
J
=150°C
-- 1.8 2.35 I
F
=5A
--- 1.45 --- I
F
=5A, T
J
=150°C
R
BR
Bootstrap Resistor Value --- 22 --- T
J
=25°C
R
BR
/R
BR
Bootstrap Resistor Tolerance --- --- ±5 % T
J
=25°C
--- 9 --- ISD=Vss. See fig. 2 and fig. 11b
--- 7 --- ISD=Open. See fig. 2 and fig. 11b
I
F
=1AV
BDFM
Bootstrap Diode Forward Voltage
Drop V
I
BUS_TRIP
Current Protection Threshold
(positive going) A
-- 1.2 ---
V
CE(ON)
Collector-to-Emitter Saturation
Voltage V
V
FM
Diode Forward Voltage Drop V
I
CES
Zero Gate Voltage Collector
Current A
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IRAM136-1060BS
Inverter Section Switching Characteristics @ T
J
= 25°C
Symbol Parameter Min Typ Max Units Conditions
EON Turn-On Switching Loss --- 240 400
EOFF Turn-Off Switching Loss --- 65 90
ETOT Total Switching Loss --- 305 490
EREC Diode Reverse Recovery energy --- 15 25
tRR Diode Reverse Recovery time --- 115 --- ns
EON Turn-on Switching Loss --- 330 ---
EOFF Turn-off Switching Loss --- 105 ---
ETOT Total Switching Loss --- 435 ---
EREC Diode Reverse Recovery energy --- 40 ---
tRR Diode Reverse Recovery time --- 150 --- ns
QGTurn-On IGBT Gate Charge --- 19 29 nC IC=8A, V+=400V, VGE=15V
RBSOA Reverse Bias Safe Operating Area
TJ=150°C, IC=5A, VP=600V
V+= 450V,
VCC=+15V to 0V See CT3
SCSOA Short Circuit Safe Operating Area 5 --- --- μs
TJ=25°C, VP=600V,
V+= 360V,
VCC=+15V to 0V See CT2
ICSC Short Circuit Collector Current --- 50 --- A TJ=25°C, V+= 400V, VCC=15V
See CT2
μJ
μJ
IC=5A, V+=400V
VCC=15V, L=1.2mH
Energy losses include "tail" and
diode reverse recovery
See CT1
IC=5A, V+=400V
VCC=15V, L=1.2mH, TJ=150°C
Energy losses include "tail" and
diode reverse recovery
See CT1
FULL SQUARE
Recommended Operating Conditions Driver Function
Symbol Definition Min Typ Max Units
V
B1,2,3
High side floating supply voltage V
S
+12 V
S
+15 V
S
+20
V
S1,2,3
High side floating supply offset voltage Note 4 --- 450
V
CC
Low side and logic fixed supply voltage 12 15 20
V
ITRIP
I
TRIP
input voltage V
SS
--- V
SS
+5
V
IN
Logic input voltage LIN, HIN V
SS
--- V
SS
+5 V
HIN High side PWM pulse width 1 --- --- μs
Deadtime External dead time between HIN and LIN 1 --- --- μs
Note 3: For more details, see IR21364 data sheet
V
Note 4: Logic operational for V
s
from COM-5V to COM+600V. Logic state held for V
s
from COM-5V to COM-V
BS
.
(please refer to DT97-3 for more details)
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. All voltages are absolute referenced to COM. The V
S
offset is tested with all supplies biased at
15V differential (Note 3)
V
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IRAM136-1060BS
Static Electrical Characteristics Driver Function @ TJ= 25°C
Symbol Definition Min Typ Max Units
V
IN,th+
Positive going input threshold 2.5 --- --- V
V
IN,th-
Negative going input threshold --- --- 0.8 V
V
CCUV+,
V
BSUV+
V
CC
and V
BS
supply undervoltage, Positive going threshold 10.6 11.1 11.6 V
V
CCUV-,
V
BSUV-
V
CC
and V
BS
supply undervoltage, Negative going threshold 10.4 10.9 11.4 V
V
CCUVH,
V
BSUVH
V
CC
and V
BS
supply undervoltage lock-out hysteresis --- 0.2 --- V
I
QBS
Quiescent V
BS
supply current --- --- 120 μA
I
QCC
Quiescent V
CC
supply current --- --- 4 mA
I
LK
Offset Supply Leakage Current --- --- 50 μA
I
IN+
Input bias current V
IN
=3.3V --- 100 195 μA
I
IN-
Input bias current V
IN
=0V -1 -- --- μA
I
TRIP+
I
TRIP
bias current V
T/ITRIP
=3.3V --- 3.3 6 μA
I
TRIP-
I
TRIP
bias current V
T/ITRIP
=0V -1 --- --- μA
V(I
TRIP
)I
TRIP
threshold Voltage 0.44 0.49 0.54 V
V(I
Trip,
HYS) I
TRIP
Input Hysteresis --- 0.07 --- V
V
BIAS
(V
CC
, V
BS1,2,3
)=15V, unless otherwise specified. The V
IN
and I
IN
parameters are referenced to COM and are
applicable to all six channels. (Note 3)
Dynamic Electrical Characteristics @ TJ= 25°C
Symbol Parameter Min Typ Max Units Conditions
T
ON
Input to Output propagation turn-
on delay time (see fig.11) --- --- 1.15 μs
T
OFF
Input to Output propagation turn-
off delay time (see fig. 11) --- --- 1.15 μs
T
FLT
Input Filter Time (HIN, LIN) 100 200 --- ns V
IN
=0 or V
IN
=5V
T
BLT-ITRIP
I
TRIP
Blanking Time 100 150 --- ns V
IN
=0 or V
IN
=5V, V
ITRIP
=5V
D
T
Dead Time 220 290 360 ns V
IN
=0 or V
IN
=5V
M
T
Matching Propagation Delay Time
(On & Off) all channels --- 40 75 ns External dead time> 400ns
T
ITRIP
I
TRIP
to six switch turn-off
propagation delay (see fig. 2) --- --- 1.75 μs I
C
=5A, V
+
=300V
T
FLT-CLR
FAULT clear time (see fig. 2) --- 32.0 --- ms T
C
= 25°C
I
C
=5A, V
+
=300V
Driver only timing unless otherwise specified.
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IRAM136-1060BS
Thermal and Mechanical Characteristics
Symbol Parameter Min Typ Max Units Conditions
R
th(J-C)
Thermal resistance, per IGBT --- 4.6 5.0
R
th(J-C)
Thermal resistance, per Diode --- 6.9 7.6
R
th(C-S)
Thermal resistance, C-S --- 0.1 ---
C
D
Creepage Distance, from pins to
backside of module 3.2 --- --- mm See outline Drawings
CTI Comparative Tracking Index 600 --- --- -
Inverter Operating Condition
Flat, greased surface. Heatsink
compound thermal conductivity
1W/mK
°C/W
Internal NTC - Thermistor Characteristics
Parameter Definition Min Typ Max Units Conditions
R25 Resistance 97 100 103 k TC = 25°C
R125 Resistance 2.25 2.52 2.80 k TC = 125°C
B B-constant (25-50°C) 4165 4250 4335 k R2 = R1e [B(1/T2 - 1/T1)]
Temperature Range -40 --- 125 °C
Typ. Dissipation constant --- 1 --- mW/°C TC = 25°C
Internal Current Sensing Resistor - Shunt Characteristics
Symbol Parameter Min Typ Max Units Conditions
RShunt Resistance 72.5 73.3 74.1 m TC = 25°C
TCoeff Temperature Coefficient 0 --- 200 ppm/°C
PShunt Power Dissipation --- --- 2.2
W
-40°C< TC <100°C
TRange Temperature Range -40 --- 125 °C
Input-Output Logic Level Table
FLT/EN I
TRIP
HIN1,2,3 LIN1,2,3 U,V,W
1010V+
10010
1000Off
1011Off
11XXOff
0XXXOff
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IRAM136-1060BS
ITRIP
U,V,W
LIN1,2,3
HIN1,2,3
Figure 1. Input/Output Timing Diagram
ITRIP
LIN1,2,3
HIN1,2,3
TFLT-CLR
50%
50%
U,V,W
50%
TITRIP
50%
Figure 2. ITRIP Timing Waveform
Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the half-
bridge output voltage would be determined by the direction of current flow in the load.
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IRAM136-1060BS
Module Pin-Out Description
Pin Name Description
1 VB3 High Side Floating Supply Voltage 3
2 W,VS3 Output 3 - High Side Floating Supply Offset Voltage
3nanone
4nanone
5 VB2 High Side Floating Supply voltage 2
6 V,VS2 Output 2 - High Side Floating Supply Offset Voltage
7nanone
8nanone
9 VB1 High Side Floating Supply voltage 1
10 U,VS1 Output 1 - High Side Floating Supply Offset Voltage
11 na none
12 na none
13 V
+
Positive Bus Input Voltage
14 na none
15 na none
16 V- Negative Bus Input Voltage
17 HIN1 Logic Input High Side Gate Driver - Phase 1
18 HIN2 Logic Input High Side Gate Driver - Phase 2
19 HIN3 Logic Input High Side Gate Driver - Phase 3
20 LIN1 Logic Input Low Side Gate Driver - Phase 1
21 LIN2 Logic Input Low Side Gate Driver - Phase 2
22 LIN3 Logic Input Low Side Gate Driver - Phase 3
23 FLT/EN Fault Output and Enable Pins
24 I
FB
Current Feedback Output Pin
25 V
CC
+15V Main Supply
26 V
SS
Negative Main Supply
27 ISD Current Protection Level Programming Pin
28 RCIN RCIN Reset Programming Pin
29 V
TH
Temperature Feedback
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IRAM136-1060BS
Typical Application Connection IRAM136-1060BS
Application Notes
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce
ringing and EMI problems. Mounting an additional high frequency ceramic capacitor close to the module
pins is highly recommended.
2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors
shown connected between these terminals should be located very close to the module pins. Additional high
frequency capacitors, typically 0.1μF, are strongly recommended.
3. Value of the boot-strap capacitors depends upon the switching frequency and modulation techniques.
Their selection should be made based on IR design tip DN 98-2a, application note AN-1044 or Figure 9.
Bootstrap capacitor value must be selected to limit the power dissipation of the internal resistor in series
with the VCC. (See maximum ratings Table on page 3).
4. WARNING! Please note that after approx. 32ms the FAULT is automatically reset. (See Dynamic
Characteristics Table on page 5). The default Fault clear time is when RCIN pin is open. Refer to Figure
11a for Re selection and desired RCIN setting.
5. PWM generator must be disabled within automatic reset time (TFLT-CLR) to guarantee shutdown of the
system, overcurrent condition must be cleared before resuming operation.
6. ISD can be programmed by using external resistor (Rext) connected to Vss. The default current level is
when ISD pin is open (see Inverter Characteristics Table on page 3). Maximum current level can be
achieved by connecting ISD to Vss. See Figure 11b for desired current level and resistor selection.
7. Fault/En pin (23) must be pulled-up to +5V.
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IRAM136-1060BS
0
1
2
3
4
5
6
7
8
9
10
11
12
0 2 4 6 8 10121416182
PWM Sw itching Fre quency - k Hz
Maximum Output Phase RMS Current - A
0
T
C
= 80º
C
T
C
= 90º
C
T
C
= 100º
C
Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=100Hz
0
1
2
3
4
5
6
1 10 100
Modulation Frequency - Hz
Maximum Output Phase RMS Current - A
F
PWM
= 12kHz
F
PWM
= 16kHz
F
PWM
= 20kHz
Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency
Sinusoidal Modulation, V+=400V, TJ=150°C, TC=100°C, MI=0.8, PF=0.6
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IRAM136-1060BS
0
20
40
60
80
100
0 2 4 6 8 10121416182
PWM Sw itching Frequency - kHz
Total Power Loss- W
0
I
OUT
= 6A
I
OUT
= 5A
I
OUT
= 4A
Figure 5. Total Power Losses vs. PWM Switching Frequency
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=100Hz
0
20
40
60
80
100
120
01234567
Output Phase Current - A
RM
8
S
Total Power Loss - W
F
PWM
= 20kHz
F
PWM
= 16kHz
F
PWM
= 12kHz
Figure 6. Total Power Losses vs. Output Phase Current
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=100Hz
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IRAM136-1060BS
40
60
80
100
120
140
160
01234567
Output Phase Current - ARM
8
S
Max Allowable Case Temperature - ºC
FPWM = 12kHz
FPWM
= 16kHz
FPWM
= 20kHz
Figure 7. Maximum Allowable Case Temperature vs. Output RMS Current per Phase
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz
111
90
100
110
120
130
140
150
160
65 70 75 80 85 90 95 100 105 110 115
Internal Therm istor Tem perature Equivalent Read Out - °C
IGBT Junction Temperature - °C
T
J avg
= 1.2 x T
Therm
+ 17
Figure 8. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature
Sinusoidal Modulation, V+=400V, Iphase=5Arms, fsw=16kHz, fmod=50Hz, MI=0.8, PF=0.6
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IRAM136-1060BS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
Thermistor Temperature - °C
Thermistor Pin Read-Out Voltage - V
Max
Avg.
Min
Figure 9. Thermistor Readout vs. Temperature (47kohm pull-up resistor, 5V) and
Normal Thermistor Resistance values vs. Temperature Table.
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
0 5 10 15 20
PWM Frequency - kHz
Recommended Bootstrap Capacitor -F
10
F
3.3
F
2.2
F
6.8F
1.5
F
4.7
F
Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency
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IRAM136-1060BS
0
4
8
12
16
20
24
12345678910
External Pull Up Resistor Selection - M
Typical Fault Clear Time - ms
Figure 11a. External Pull Up resistor selection for Fault clear time
(Recommended minimum Pull up Resistor is 1M)
0
2
4
6
8
10
12
0 5 10 15 20 25 30 35 40 45 50
ISD Program m able Pull-Dow n Resistor - k
Typical ITRIP Threshold - A
Figure 11b. Itrip Level External Pull down Resistor Selection
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IRAM136-1060BS
Figure 12. Switching Parameter Definitions
Figure 11a. Input to Output propagation turn-on
delay time.
Figure 11b. Input to Output propagation turn-off
delay time.
Figure 11c. Diode Reverse Recovery.
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IRAM136-1060BS
Ho
Lo
U,V,W
IC
Driver
Lin1,2,3
Hin1,2,3
V+
IN
IO
Figure CT1. Switching Loss Circuit
Ho
Lo
U,V,W
IC
Driver
Lin1,2,3
Hin1,2,3
Io
V+
IN
IO
Figure CT2. S.C.SOA Circuit
Ho
Lo
U,V,W
IC
Driver
Hin1,2,3
Io
Lin1,2,3
V+
IN
IO
Figure CT3. R.B.SOA Circuit
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IRAM136-1060BS
Package Outline IRAM136-1060BS
missing pin : 3,4,7,8,11,12,14,15
note2
note4
note3
IRAM136-1060BS
P
note5
note1: Unit Tolerance is +0.5mm,
䇭䇭䇭 Unless Otherwise Specified.
note2: Mirror Surface Mark indicates Pin1 Identification.
note3: Part Number Marking.
Characters Font in this drawing differs from
䇭䇭䇭䇭 Font shown on Module.
note4: Lot Code Marking.
Characters Font in this drawing differs from
䇭䇭䇭䇭 Font shown on Module.
note5: “P” Character denotes Lead Free.
Characters Font in this drawing differs from
Font shown on Module.
Dimensions in mm
For mounting instruction see AN-1049
Data and Specifications are subject to change without notice
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
2008-05-23
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Mouser Electronics
Authorized Distributor
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IRAM136-1060BS