Automotive Power
Data Sheet
Rev. 1.3, 2010-03-16
Smart High-Side Power Switch
Smart High-Side Power Switch
PROFET BTS721L1
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Data Sheet 2 Rev. 1.3, 2010-03-16
Smart High-Side Power Switch
BTS721L1
S
mart Four
C
hannel Highside Power
S
witch
Features
• Overload protection
• Current limitation
• Short-circuit protection
• Thermal shutdown
• Overvoltage protection
(including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown
with auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
•Electrostatic discharge (ESD) protection
Application
•µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitive loads
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
Pin Definitions and Functions
Pin Symbol Function
1,10,
11,12,
15,16,
19,20
Vbb Positive power supply voltage. Design the
wiring for the simultaneous max. short circuit
currents from channel 1 to 4 and also for low
thermal resistance
3 IN1 Input 1 .. 4, activates channel 1 .. 4 in case of
5 IN2 logic high signal
7 IN3
9 IN4
18 OUT1 Output 1 .. 4, protected high-side power output
17 OUT2 of channel 1 .. 4. Design the wiring for the
14 OUT3 max. short circuit current
13 OUT4
4 ST1/2 Diagnostic feedback 1/2 of channel 1 and
channel 2, open drain, low on failure
8 ST3/4 Diagnostic feedback 3/4 of channel 3 and
channel 4, open drain, low on failure
2 GND1/2 Ground 1/2 of chip 1 (channel 1 and channel 2)
6 GND3/4 Ground 3/4 of chip 2 (channel 3 and channel 4)
1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Product Summary
Overvoltage Protection
V
bb(AZ)
43 V
Operating voltage
V
bb(on)
5.0 ... 34 V
active channels: one
two parallel four parallel
On-state resistance R
ON
100 50 25
mΩ
Nominal load current ,
/120
2.9 4.3 6.3 A
Current limitation ,
/6&U
8 8 8 A
Pin configuration (top view)
Vbb 1
•
20 Vbb
GND1/2 2 19 Vbb
IN1 3 18 OUT1
ST1/2 4 17 OUT2
IN2 5 16 Vbb
GND3/4 6 15 Vbb
IN3 7 14 OUT3
ST3/4 8 13 OUT4
IN4 9 12 Vbb
Vbb 10 11 Vbb
P-DSO-20
PG-DSO20
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Data Sheet 3 Rev. 1.3, 2010-03-16
Smart High-Side Power Switch
BTS721L1
Block diagram
Four Channels; Open Load detection in on state;
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Data Sheet 4 Rev. 1.3, 2010-03-16
Smart High-Side Power Switch
BTS721L1
Maximum Ratings at
T
j = 25°C unless otherwise specified
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 4)
V
bb 43 V
Supply voltage for full short circuit protection
T
j,start =-40 ...+150°C
V
bb 34 V
Load current (Short-circuit current, see page 5)
I
L self-limited A
Load dump protection2)
V
LoadDump =
U
A +
V
s,
U
A = 13.5 V
R
I3)= 2 Ω,
t
d= 200 ms; IN= low or high,
each channel loaded with
R
L= 4.7Ω,
V
Load
dump4)
60 V
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
°C
Power dissipation (DC)5
T
a = 25°C:
(all channels active)
T
a = 85°C:
P
tot 3.7
1.9
W
Inductive load switch-off energy dissipation, single pulse
Vbb =12V,
T
j,start =150°C5),
I
L= 2.9 A, ZL= 58 mH, 0Ω one channel:
I
L= 4.3 A, ZL= 58 mH, 0Ω two parallel channels:
I
L= 6.3 A, ZL= 58 mH, 0Ω four parallel channels:
see diagrams on page 9 and page 10
E
AS 0.3
0.65
1.5
J
Electrostatic discharge capability (ESD)
(Human Body Model)
V
ESD 1.0 kV
Input voltage (DC)
V
IN -10 ... +16 V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagram page 8
I
IN
I
ST
±2.0
±5.0
mA
Thermal resistance
junction - soldering point5),6) each channel:
R
thjs 15 K/W
junction - ambient5) one channel active:
all channels active:
R
thja 41
34
2) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for input
protection is integrated.
3)
R
I = internal resistance of the load dump test pulse generator
4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
5) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 15
6)Soldering point: upper side of solder edge of device pin 15. See page 15
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Data Sheet 5 Rev. 1.3, 2010-03-16
Smart High-Side Power Switch
BTS721L1
Electrical Characteristics
Parameter and Conditions, each of the four channels Symbol Values Unit
at Tj = 25 °C,
V
bb = 12 V unless otherwise specified min typ max
Load Switching Capabilities and Characteristics
On-state resistance (Vbb to OUT)
IL = 2 A each channel,
T
j = 25°C:
T
j = 150°C:
two parallel channels,
T
j = 25°C:
four parallel channels,
T
j = 25°C:
R
ON -- 85
170
43
22
100
200
50
25
mΩ
Nominal load current one channel active:
two parallel channels active:
four parallel channels active:
Device on PCB5),
T
a= 85°C,
T
j≤ 150°C
I
L(NOM) 2.5
3.8
5.9
2.9
4.3
6.3
-- A
Output current while GND disconnected or pulled
up; Vbb = 30 V,
V
IN = 0, see diagram page 9
I
L(GNDhigh) -- -- 10 mA
Turn-on time to 90%
V
OUT:
Turn-off time to 10%
V
OUT:
R
L =12Ω,
T
j =-40...+150°C
t
on
t
off
80
80
200
200
400
400
µs
Slew rate on
10 to 30%
V
OUT,
R
L=12Ω,
T
j =-40...+150°C:
d
V
/dton 0.1 -- 1 V/µs
Slew rate off
70 to 40%
V
OUT,
R
L=12Ω,
T
j =-40...+150°C: -d
V
/dtoff 0.1 -- 1 V/µs
Operating Parameters
Operating voltage7)
T
j =-40...+150°C:
V
bb(on) 5.0 -- 34 V
Undervoltage shutdown
T
j =-40...+150°C:
V
bb(under) 3.5 -- 5.0 V
Undervoltage restart
T
j =-40...+25°C:
T
j =+150°C:
V
bb(u rst) -- -- 5.0
7.0
V
Undervoltage restart of charge pump
see diagram page 14
T
j =-40...+150°C:
V
bb(ucp) -- 5.6 7.0 V
Undervoltage hysteresis
∆
V
bb(under) =
V
bb(u rst) -
V
bb(under)
∆
V
bb(under) -- 0.2 -- V
Overvoltage shutdown
T
j =-40...+150°C:
V
bb(over) 34 -- 43 V
Overvoltage restart
T
j =-40...+150°C:
V
bb(o rst) 33 -- -- V
Overvoltage hysteresis
T
j =-40...+150°C: ∆
V
bb(over) -- 0.5 -- V
Overvoltage protection8)
T
j =-40...+150°C:
I
bb = 40 mA
V
bb(AZ) 42 47 -- V
Standby current, all channels off
T
j =25°C:
VIN =0
T
j =150°C:
I
bb(off) --
--
28
44
60
70
µA
7) At supply voltage increase up to
V
bb =5.6V typ without charge pump,
V
OUT ≈
V
bb - 2 V
8) see also
V
ON(CL) in circuit diagram on page 8.
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Data Sheet 6 Rev. 1.3, 2010-03-16
Smart High-Side Power Switch
BTS721L1
Parameter and Conditions,
each of the four channels
Symbol Values Unit
at Tj = 25 °C,
V
bb = 12 V unless otherwise specified
min typ max
Leakage output current (included in
I
bb(off)
)
V
IN
=0
I
L(off)
-- -- 12 µA
Operating current
9)
,
V
IN
= 5V,
T
j
=-40...+150°C
I
GND
=
I
GND1/2
+
I
GND3/4
, one channel on:
four channels on:
I
GND
--
-- 2
83
12 mA
Protection Functions
10)
Initial peak short circuit current limit,
(see timing
diagrams, page 13)
each channel,
T
j
=-40°C:
T
j
=25°C:
T
j
=+150°C:
I
L(SCp)
11
9
5
18
14
8
25
22
14
A
two parallel channels twice the current of one channel
four parallel channels four times the current of one channel
Repetitive short circuit current limit,
T
j
=
T
jt
each channel
two parallel channels
four parallel channels
(see timing diagrams, page 13)
I
L(SCr)
--
--
--
8
8
8
--
--
--
A
Initial short circuit shutdown time
T
j,start
=-40°C:
T
j,start
= 25°C:
(see page 12 and timing diagrams on page 13)
t
off(SC)
--
--
15
12
--
--
ms
Output clamp (inductive load switch off)
11)
at V
ON(CL)
= V
bb
- V
OUT
V
ON(CL)
-- 47 -- V
Thermal overload trip temperature
T
jt
150 -- -- °C
Thermal hysteresis
∆
T
jt
-- 10 -- K
Reverse Battery
Reverse battery voltage
12
) -
V
bb
-- -- 32 V
Drain-source diode voltage
(Vout > Vbb)
I
L
=-2.9 A,
T
j
=+150°C -
V
ON
-- 610 -- mV
9)Add
I
ST, if
I
ST > 0
10) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
11)If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
VON(CL)
12) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 3 and circuit page 8).
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Data Sheet 7 Rev. 1.3, 2010-03-16
Smart High-Side Power Switch
BTS721L1
Parameter and Conditions,
each of the four channels
Symbol Values Unit
at Tj = 25 °C,
V
bb = 12 V unless otherwise specified
min typ max
Diagnostic Characteristics
Open load detection current,
(on-condition)
each channel,
T
j
= -40°C:
T
j
= 25°C:
T
j
= 150°C:
I
L (OL)1
20
20
20
--
--
--
400
300
300
mA
two parallel channels twice the current of one channel
four parallel channels four times the current of one channel
Open load detection voltage
13
)
T
j
=-40..+150°C:
V
OUT(OL)
2 3 4 V
Internal output pull down
(OUT to GND), VOUT =5V
T
j
=-40..+150°C:
R
O
41030kΩ
Input and Status Feedback
14)
Input resistance
(see circuit page 8)
T
j
=-40..+150°C:
R
I
2.5 3.5 6 kΩ
Input turn-on threshold voltage
T
j
=-40..+150°C:
V
IN(T+)
1.7 -- 3.5 V
Input turn-off threshold voltage
T
j
=-40..+150°C:
V
IN(T-)
1.5 -- -- V
Input threshold hysteresis ∆
V
IN(T)
-- 0.5 -- V
Off state input current
V
IN
= 0.4 V:
T
j
=-40..+150°C:
I
IN(off)
1 -- 50 µA
On state input current
V
IN
= 5 V:
T
j
=-40..+150°C:
I
IN(on)
20 50 90 µA
Delay time for status with open load after switch
off (other channel in off state)
(see timing diagrams, page 14
),
T
j
=-40..+150°C:
t
d(ST OL4)
100 320 800 µs
Delay time for status with open load after switch
off (other channel in on state)
(see timing diagrams, page 14
),
T
j
=-40..+150°C:
t
d(ST OL5)
-- 5 20 µs
Status invalid after positive input slope
(open load)
T
j
=-40..+150°C:
t
d(ST)
-- 200 600 µs
Status output (open drain)
Zener limit voltage
T
j
=-40...+150°C,
I
ST
= +1.6 mA:
ST low voltage
T
j
=-40...+25°C,
I
ST
= +1.6 mA:
T
j
= +150°C,
I
ST
= +1.6 mA:
V
ST(high)
V
ST(low)
5.4
--
--
6.1
--
--
--
0.4
0.6
V
13) External pull up resistor required for open load detection in off state.
14) If ground resistors RGND are used, add the voltage drop across these resistors.
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Data Sheet 8 Rev. 1.3, 2010-03-16
Smart High-Side Power Switch
BTS721L1
Truth Table
Channel 1 and 2 Chip 1 IN1 IN2 OUT1 OUT2 ST1/2
Channel 3 and 4
(equivalent to channel 1 and 2)
Chip 2 IN3 IN4 OUT3 OUT4 ST3/4
BTS 721L1
Normal operation L
L
H
H
L
H
L
H
L
L
H
H
L
H
L
H
H
H
H
H
Open load Channel 1 (3) L
L
H
L
H
X
Z
Z
H
L
H
X
H(L15))
H
L
Channel 2 (4) L
H
X
L
L
H
L
H
X
Z
Z
H
H(L15))
H
L
Short circuit to Vbb Channel 1 (3) L
L
H
L
H
X
H
H
H
L
H
X
L16)
H
H(L17))
Channel 2 (4) L
H
X
L
L
H
L
H
X
H
H
H
L16)
H
H(L17))
Overtemperature both channel L
X
H
L
H
X
L
L
L
L
L
L
H
L
L
Channel 1 (3) L
H
X
X
L
L
X
X
H
L
Channel 2 (4) X
X
L
H
X
X
L
L
H
L
Undervoltage/ Overvoltage X X L L H
L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal valid after the time delay shown in the timing diagrams
Parallel switching of channel 1 and 2 (also channel 3 and 4) is easily possible by connecting the inputs and
outputs in parallel (see truth table). If switching channel 1 to 4 in parallel, the status outputs ST1/2 and ST3/4
have to be configured as a 'Wired OR' function with a single pull-up resistor.
Terms
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Leadframe (Vbb) is connected to pin 1,10,11,12,15,16,19,20
External RGND optional; two resistors RGND1/2 ,RGND3/4 = 150 Ω or a single resistor RGND =75Ω for
reverse battery protection up to the max. operating voltage.
15) With additional external pull up resistor
16) An external short of output to Vbb in the off state causes an internal current from output to ground. If RGND is
used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious.
17) Low resistance to
V
bb may be detected by no-load-detection
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Data Sheet 9 Rev. 1.3, 2010-03-16
Smart High-Side Power Switch
BTS721L1
Input circuit (ESD protection),
IN1...4
,1
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,
5
(6'='
,
,
,
ESD zener diodes are not to be used as voltage clamp at
DC conditions. Operation in this mode may result in a drift of
the zener voltage (increase of up to 1 V).
Status output,
ST1/2 or ST3/4
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5
6721
ESD-Zener diode: 6.1 V typ., max 5.0 mA; RST(ON) < 380 Ω
at 1.6 mA, ESD zener diodes are not to be used as voltage
clamp at DC conditions. Operation in this mode may resultin
a drift of the zener voltage (increase of up to 1 V).
Inductive and overvoltage output clamp,
OUT1...4
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ON clamped to
V
ON(CL) = 47 V typ.
Overvoltage protection of logic part
GND1/2 or GND3/4
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RGND = 150 Ω
Reverse battery protection
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GND = 150 Ω,
R
I= 3.5 kΩ typ,
Temperature protection is not active during inverse current
operation.
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Data Sheet 10 Rev. 1.3, 2010-03-16
Smart High-Side Power Switch
BTS721L1
Se
mi
co
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ducto
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2
003
-
Oct
-
0
1
Open-load detection,
OUT1...4
ON-state diagnostic condition:
V
ON < RON
·
IL(OL); IN high
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Any kind of load. In case of IN= high is
V
OUT
≈
V
IN
-
V
IN(T+)
.
Due to V
GND
> 0, no V
ST
= low signal available.
GND disconnect with GND pull up
(channel 1/2 or 3/4)
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GND
>
V
IN
-
V
IN(T+)
device stays off
Due to V
GND
> 0, no V
ST
= low signal available.
Vbb disconnect with energized inductive
load
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For an inductive load current up to the limit defined by EAS
(max. ratings see page 3 and diagram on page 10) each
switch is protected against loss of Vbb.
Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load the whole load
current flows through the GND connection.
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Data Sheet 11 Rev. 1.3, 2010-03-16
Smart High-Side Power Switch
BTS721L1
Inductive load switch-off energy
dissipation
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Energy stored in load inductance:
E
L = 1/2
·
L
·
I2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
E
AS= Ebb + EL - ER= VON(CL)
·
iL(t) dt,
with an approximate solution for RL> 0Ω:
E
AS=IL·L
2·RL
(
Vbb +|V
OUT(CL)|)
OQ
(1+ IL·RL
|VOUT(CL)| )
Maximum allowable load inductance for
a single switch off
(one channel)5)
/ I,/Tj,start = 150°C, Vbb = 12 V, RL=0Ω
L [mH]
I
L [A]
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Data Sheet 12 Rev. 1.3, 2010-03-16
Smart High-Side Power Switch
BTS721L1
Typ. on-state resistance
; IL= 2 A, IN = high
RON [mOhm]
Vbb [V]
Typ. open load detection current
IN = high
IL(OL) ]Am[
Vbb [V]
Typ. standby current
;Vbb = 9...34 V, IN1...4 = low
Ibb(off) [µA]
Tj [°C]
Typ. initial short circuit shutdown time
; Vbb =12 V
t
off(SC)
[msec]
0
2
4
6
8
10
12
14
16
-40 -25 0 25 50 75 100 125 15
T
j, start
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Data Sheet 13 Rev. 1.3, 2010-03-16
Smart High-Side Power Switch
BTS721L1
Figure 1a: Vbb turn on:
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Figure 2a: Switching a lamp:
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The initial peak current should be limited by the lamp and not by
the initial short circuit current IL(SCp) = 14 A typ. of the device.
Figure 2b: Switching an inductive load
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occur
Figure 3a: Turn on into short circuit:
shut down by overtemperature, restart by cooling
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Heating up of the chip may require several milliseconds, depending
on external conditions (toff(SC) vs. Tj,start see page 12)
Timing diagrams
Timing diagrams are shown for chip 1 (channel 1/2). For chip 2 (channel 3/4) the diagrams
are valid too. The channels 1 and 2, respectively 3 and 4, are symmetric and consequently
the diagrams are valid for each channel as well as for permuted channels
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Data Sheet 14 Rev. 1.3, 2010-03-16
Smart High-Side Power Switch
BTS721L1
Figure 3b: Turn on into short circuit:
shut down by overtemperature, restart by cooling
(two parallel switched channels 1 and 2)
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Figure 4a: Overtemperature:
Reset if
T
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T
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Figure 5a: Open load: detection in ON-state, open
load occurs in on-state
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td(ST OL1) = 30 µs typ., td(ST OL2) = 20 µs typ
Figure 5b: Open load: detection in ON-state, turn
on/off to open load
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IN2 channel 2: normal operation
channel 1: open load
The status delay time td(STOL4) allows to distinguish between the
failure modes "open load in ON-state" and "overtemperature".
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Data Sheet 15 Rev. 1.3, 2010-03-16
Smart High-Side Power Switch
BTS721L1
Figure 5c: Open load: detection in ON- and OFF-state
(with REXT), turn on/off to open load
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td(ST OL5) depends on external circuitry because of high
impedance
Figure 6a: Undervoltage:
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bb(under) bb(u rst)
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Figure 6b: Undervoltage restart of charge pump
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IN = high, normal load conditions.
Charge pump starts at Vbb(ucp) = 5.6V typ.
Figure 7a: Overvoltage:
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VVbb(over) Vbb(o rst)
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Data Sheet 16 Rev. 1.3, 2010-03-16
Smart High-Side Power Switch
BTS721L1
Package Outlines
Figure 1 PG-DSO-20 (Plastic Dual Small Outline Package) (RoHS-compliant)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-
free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Please specify the package needed (e.g. green package) when placing an order
110
1120
Index Marking
1) Does not include plastic or metal protrusions of 0.15 max per side
2) Does not include dambar protrusion of 0.05 max per side
GPS05094
2.65 max
0.1
0.2
-0.1
2.45
-0.2
+0.15
0.35
1.27
2)
0.2 24x
-0.2
7.6
1)
0.35 x 45˚
0.23
8˚ max
+0.09
+0.8
±0.3
10.3
0.4
12.8
-0.2 1)
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.Dimensions in mm
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Data Sheet 17 Rev. 1.3, 2010-03-16
Smart High-Side Power Switch
BTS721L1
Revision History
Version Date Changes
Rev. 1.3 2010-03-16 page 6: changed reference to the timing diagram
Rev. 1.2 2009-07-21 page 1: added new coverpage
page 6: Initial short circuit shutdown time changed:
toff(SC) -40 °C to 15 ms
toff(SC) 25 °C to 12 ms
page 12: changed graphic
V1.1 2007-08-30 Creation of the green datasheet.
First page :
Adding the green logo and the AEC qualified
Adding the bullet AEC qualified and the RoHS compliant features
Package page
Modification of the package to be green.
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Edition 2010-03-16
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 3/16/10.
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
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