SOLITRON DEVICES INC 8368602 SOLITRON DEVICES INC ee 61C 60465 D Po BOWER TRANSISTORS fee ae tn a Rt inet , oe 2N3469 re 7-35-19 NPN SILICON POWER TRANSISTORS MEDIUM POWER | 5 AMPERES FEATURES GAIN LINEARITY LOW SATURATION VOLTAGE APPLICATIONS MEDIUM POWER, HIGH FREQUENCY SWITCHING AND AMPLIFYING T0-5 ABSOLUTE MAXIMUM RATINGS 2N3469 VoR0 COLLECTOR-BASE VOLTAGE 35 V VoEo COLLECTOR-EMITTER VOLTAGE 25V Vepo EMITTER-BASE VOLTAGE 5V Ig CONTINUOUS COLLECTOR CURRENT 5A ip CONTINUOUS BASE CURRENT 0.5A Ty OPERATING JUNCTION TEMPERATURE _____ - 65C to +200C Tstq STORAGE TEMPERATURE _____ - 65C to + 200C Rese THERMAL RESISTANCE, JUNCTION TO CASE 25C/W Pp POWER DISSIPATION (100C) 4wTHT rw re eRe 3368602 SOLITRON DEVICES. INC. POWER TRANSISTORS 2N3469- ELECTRICAL CHARACTERISTICS (Tc = 25C UNLESS OTHERWISE NOTED) CHARACTERISTICS ~ | SYMBOL | = MIN. UNITS COLLECTOR-EMITTER SUSTAINING VOLTAGE *-- ~~ . Veeo(sus) (Ig= 100mA) COLLECTOR-EMITTER CUTOFF CURRENT loex (VcE= 35V, Veg= 0.5V, To= 150C) (Vce= 35V, Veg= 0.5) COLLECTOR-BASE CUTOFF CURRENT (Vop= 35V) EMITTER BASE CUTOFF CURRENT (Vep= 5) COLLECTOR-EMITTER CUTOFF CURRENT (VcE= 20V) DC CURRENT GAIN * tee (ig= 500MA, Voge 1V) (Ig= 1.0A, Vog= 1V) COLLECTOR-EMITTER SATURATION VOLTAGE * Voe(sat) (i= 1.0A, Ig= 0.1A) BASE-EMITTER SATURATION VOLTAGE * VeE(sat) (ig= 1.0A, [p= 0.1A) MAGNITUDE SMALL SIGNAL GAIN (heel (Voe= 10V, I= 200mA, f= 10MHz) OUTPUT CAPACITANCE Cobo (Vop= 10V, f= 1MHz) SMALL SIGNAL GAIN Me (Vee = 10V, Io = 100mA, F = 1KHz) For typical curvas soo 2N2657, 2N2658 * PULSED 330psec; 2% DUTY CYCLE