TSM060N03PQ33
Taiwan Semiconductor
1 Version: C1608
N-Channel Power MOSFET
30V, 62A, 6mΩ
FEATURES
● Low RDS(ON) to minimize conductive Loss
● Low gate charge for fast power switching
● 100% UIS and Rg tested
● Compliant to RoHS Directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
● DC-DC Converters
● Battery Power Management
● Oring FET/Load Switch
PRODUCT SUMMARY
PARAMETER
VALUE
UNIT
VDS
30
V
RDS(on) (max)
VGS = 10V
6
mΩ
VGS = 4.5V
9
Qg
12.9
nC
Notes: MSL 1 (Moisture Sensitivity Level) per J-STD-020
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current (Note 1)
TC = 25°C
ID
62
A
TA = 25°C
15
Pulsed Drain Current (Note 1)
IDM
248
A
Single Pulse Avalanche Current (Note 2)
IAS
29
A
Single Pulse Avalanche Energy (Note 2)
EAS
42
mJ
Total Power Dissipation
TC = 25°C
PD
40
W
TC = 125°C
8
Total Power Dissipation
TA = 25°C
PD
2.3
W
TA = 125°C
0.5
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +150
°C
PARAMETER
SYMBOL
LIMIT
UNIT
Thermal Resistance – Junction to Case
RӨJC
3.1
°C/W
Thermal Resistance – Junction to Ambient
RӨJA
53
°C/W
Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-thermal reference is defined
at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board
design.
PDFN33
TSM060N03PQ33
Taiwan Semiconductor
2 Version: C1608
PARAMETER
CONDITIONS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
30
--
--
V
Gate Threshold Voltage
VGS = VDS, ID = 250µA
VGS(TH)
1.2
1.6
2.5
V
Gate-Source Leakage Current
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
Drain-Source Leakage Current
VGS = 0V, VDS = 30V
IDSS
--
--
1
µA
Drain-Source On-State Resistance
(Note 3)
VGS = 10V, ID = 15A
RDS(on)
--
4.8
6
mΩ
VGS = 4.5V, ID = 15A
--
6.7
9
Forward Transconductance (Note 3)
VDS = 5V, ID = 15A
gfs
--
38
--
S
Total Gate Charge
VGS = 10V, VDS = 15V,
ID = 15A
Qg
--
25.4
--
nC
Total Gate Charge
VGS = 4.5V, VDS = 15V,
ID = 15A
Qg
12.9
Gate-Source Charge
Qgs
--
3.8
--
Gate-Drain Charge
Qgd
--
5.7
--
Input Capacitance
VGS = 0V, VDS = 15V,
f = 1.0MHz
Ciss
--
1342
--
pF
Output Capacitance
Coss
--
227
--
Reverse Transfer Capacitance
Crss
--
169
--
Gate Resistance
f = 1.0MHz, open drain
Rg
0.8
2.7
5.4
Ω
Turn-On Delay Time
VGS = 10V, VDS = 15V,
ID = 15A, RG = 3.3Ω,
td(on)
--
7.5
--
ns
Rise Time
tr
--
14.5
--
Turn-Off Delay Time
td(off)
--
35.2
--
Fall Time
tf
--
9.6
--
Diode Forward Voltage (Note 3)
VGS = 0V, IS = 15A
VSD
--
--
1
V
Reverse Recovery Time
IS = 15A,
di/dt = 100A/μs
trr
--
8.8
--
ns
Reverse Recovery Charge
Qrr
--
26
--
nC
Notes:
1. Current limited by package.
2. L = 0.1mH, VGS = 10V, VDS = 25V, RG = 25Ω, IAS = 29A, Starting TJ = 25°C
3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.
4. Switching time is essentially independent of operating temperature.
ORDERING INFORMATION
PART NO.
PACKAGE
PACKING
TSM060N03PQ33 RGG
PDFN33
5,000pcs / 13” Reel
TSM060N03PQ33
Taiwan Semiconductor
3 Version: C1608
Normalized Gate Threshold
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Normalized Vth vs. TJ
On-Resistance vs. Junction Temperature
Capacitance vs. Drain-Source Voltage
Gate-Source Voltage vs. Gate Charge
Normalized Thermal Transient Impedance, Junction-
to-Case
Maximum Safe Operating Area, Junction-to-Case
RDS(on), Drain-Source On-Resistance
(Normalized)
TJ, Junction Temperature (°C)
TJ, Junction Temperature (℃)
C, Capacitance (pF)
VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Qg, Gate Charge (nC)
Normalized Effective Transient
Thermal Impedance
t, Square Wave Pulse Duration (sec)
1
10
100
1000
0.1 1 10 100
ID, Drain Current (A)
VDS, Drain to Source Voltage (V)
RDS(ON)
SINGLE PULSE
RӨJC=3.1°C/W
TC=25°C
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
SINGLE PULSE
RӨJC=3.1°C/W
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0 5 10 15 20 25 30
CISS
COSS
CRSS
0
2
4
6
8
10
0 5 10 15 20 25 30
VDS=15V
ID=15A
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-75 -50 -25 025 50 75 100 125 150
VGS=10V
ID=15A
0.4
0.6
0.8
1
1.2
-75 -50 -25 025 50 75 100 125 150
TSM060N03PQ33
Taiwan Semiconductor
4 Version: C1608
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
PDFN33
SUGGESTED PAD LAYOUT (Unit: Millimeters)
MARKING DIAGRAM
Y
= Year Code
M
= Month Code for Halogen Free Product
O
=Jan
P
=Feb
Q
=Mar
R
=Apr
S
=May
T
=Jun
U
=Jul
V
=Aug
W
=Sep
X
=Oct
Y
=Nov
Z
=Dec
L
= Lot Code (1~9, A~Z)
TSM060N03PQ33
Taiwan Semiconductor
5 Version: C1608
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
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