BC858BF E6327 - Infineon Technologies

Jun-16-2004

1

BC857BF...BC860BF

1

2

3

PNP Silicon AF Transistor

• For AF input stages and driver applications

• High current gain

• Low collector-emitter saturation voltage

• Low noise between 30 Hz and 15 kHz

• Complementary types: BC847BF, BC848BF

BC849BF, BC850BF (NPN)

Type Marking Pin Configuration Package

BC857BF

BC858BF

BC859BF

BC860BF

3Fs

3Ks

4Bs

4Fs

1 = B

2 = E

3 = C

TSFP-3

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage

BC857BF, BC860BF

BC858BF, BC859BF

VCEO

45

30

V

Collector-emitter voltage

BC857BF, BC860BF

BC858BF, BC859BF

VCES

50

30

Collector-base voltage

BC857BF, BC860BF

BC858BF, BC859BF

VCBO

50

30

Emitter-base voltage

BC857BF, BC860BF

BC858BF, BC859BF

VEBO

5

Collector current IC100 mA

Peak collector current ICM 200

Peak base current IBM 200

Peak emitter current IEM 200 mA

Total power dissipation, TS ≤ 128°C Ptot 250 mW

Junction temperature Tj150 °C

Storage temperature Tstg -65 ... 150

Jun-16-2004

2

BC857BF...BC860BF

Thermal Resistance

Parameter Symbol Value Unit

Junction - soldering point1) RthJS ≤ 90 K/W

Electrical Characteristics at T

A

= 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0 mA, BC857BF, BC860BF

IC = 10 mA, IB = 0 mA, BC858BF, BC859BF

V(BR)CEO

45

30

-

V

Collector-base breakdown voltage

IC = 10 µA, IE = 0 mA, BC857BF, BC860BF

IC = 10 µA, IE = 0 mA, BC858BF, BC859BF

V(BR)CBO

50

30

-

Collector-emitter breakdown voltage

IC = 10 µA, VBE = 0 V, BC857BF, BC860BF

IC = 10 µA, VBE = 0 V, BC858BF, BC859BF

V(BR)CES

50

30

-

Emitter-base breakdown voltage

IE = 1 µA, IC = 0 µA

V(BR)EBO 5 - -

Collector-base cutoff current

VCB = 30 V, IE = 0 A

VCB = 30 V, IE = 0 A, TA = 150 °C

ICBO

-

0.015

5

µA

DC current gain2)

IC = 10 µA, VCE = 5 V

IC = 2 mA, VCE = 5 V

hFE

-

220

250

290

-

475

-

Collector-emitter saturation voltage2)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VCEsat

-

75

250

300

650

mV

Base emitter saturation voltage2)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VBEsat

-

700

850

-

Base-emitter voltage2)

IC = 2 mA, VCE = 5 V

IC = 10 mA, VCE = 5 V

VBE(ON)

600

-

650

-

750

820

1For calculation of RthJA please refer to Application Note Thermal Resistance

2Pulse test: t < 300µs; D < 2%

Jun-16-2004

3

BC857BF...BC860BF

AC Characteristics

Transition frequency

IC = 20 mA, VCE = 5 V, f = 100 MHz

fT- 250 - MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb - 3 - pF

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Ceb - 10 -

Short-circuit input impedance

IC = 2 mA, VCE = 5 V, f = 1 kHz

h11e - 4.5 - kΩ

Open-circuit reverse voltage transf. ratio

IC = 2 mA, VCE = 5 V, f = 1 kHz

h12e - 2 - 10-4

Short-circuit forward current transf. ratio

IC = 2 mA, VCE = 5 V, f = 1 kHz

h21e - 330 - -

Open-circuit output admittance

IC = 2 mA, VCE = 5 V, f = 1 kHz

h22e - 30 - µS

Noise figure

IC = 200 µA, VCE = 5 V, f = 1 kHz,

∆ f = 200 Hz, RS = 2 kΩ, BC859BF

IC = 200 µA, VCE = 5 V, f = 1 kHz,

∆ f = 200 Hz, RS = 2 kΩ, BC860BF

F

-

1

4

dB

Equivalent noise voltage

IC = 200 µA, VCE = 5 V, RS = 2 kΩ,

f = 10...50 Hz , BF860BF

Vn- - 0.11 µV

Jun-16-2004

4

BC857BF...BC860BF

DC current gain hFE = ƒ(IC)

VCE = 5 V

10 10 10 10

EHP00382

h

mA

-2 -1 12

FE

3

10

2

0

10

5

10

1

0

10

5

555

100

25

-50

C

Ι

C

Collector-emitter saturation voltage

IC = ƒ(VCEsat), hFE = 20

10 0

EHP00380

V

CEsat

10

mA

10

2

1

0

-1

5

V

0.3 0.5

100

25

-50

0.1 0.2 0.4

C

Ι

C

Base-emitter saturation voltage

IC = ƒ(VBEsat), hFE = 20

0

10

EHP00379

BEsat

V

0.6 V 1.2

-1

100

101

2

10

5

Ι

C

mA

0.2 0.4 0.8

C

25

C

100

C

-50

C

Collector cutoff current ICBO = ƒ(TA)

VCB = 30 V

10 0 50 100 150

EHP00381

TA

5

10

nA

10

Ι

CB0

5

10

4

3

2

1

0

-1

max

typ

C

Jun-16-2004

5

BC857BF...BC860BF

Transition frequency fT = ƒ(IC)

VCE = 5 V

10 10 10 10

EHP00378

f

mA

MHz

-1 0 1 2

5

T

3

10

2

1

10

5

C

Ι

Collector-base capacitance CCB= ƒ (VCB0)

Emitter-base capacitance CEB= ƒ (VEB0)

0

4

10 510 10

EHP00376

VCB0

C

EB0

V

6

2

EB0

V

EBO

C

8

10

pF

12

CB0

C

-1 0 1

CCBO

(

)

BC 856...860

)

Total power dissipation Ptot = ƒ(TS)

0 20 40 60 80 100 120 °C 150

TS

0

50

100

150

200

mW

300

Ptot

Permissible Pulse Load RthJS = ƒ(tp)

10 -6 10 -5 10 -4 10 -3 10 -2 10 0

s

tp

-1

10

0

10

1

10

2

10

K/W

RthJS

D=0.5

0.2

0.1

0.05

0.02

0.01

0.005

0

Jun-16-2004

6

BC857BF...BC860BF

Permissible Pulse Load

Ptotmax/PtotDC = ƒ(tp)

10 -6 10 -5 10 -4 10 -3 10 -2 10 0

s

tp

0

10

1

10

2

10

3

10

Ptotmax/PtotDC

D=0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

h parameter he = ƒ(IC) normalized

VCE = 5V

10 10 10

BC 856...860 EHP00383

mA

-1 0 1

5

e

h

2

10

-1

10

1

10

10 0

5

h

11e

h

12e

h

21e

h

22e

V

CE

= 5 V

C

Ι

h parameter he = ƒ(VCE) normalized

IC = 2mA

00102030

BC 856...860 EHP00384

V

CE

he

V

1.0

0.5

1.5

2.0

= 2 mA h11

12

h

h22

C

Ι

Noise figure F = ƒ(VCE)

IC = 0.2mA, RS = 2kΩ , f = 1kHz

0

10 10 10 10

BC 856...860 EHP00385

VCE

F

V

10

5

15

dB

20

-1012

5 5

Jun-16-2004

7

BC857BF...BC860BF

Noise figure F = ƒ(f)

IC = 0.2mA, VCE = 5V, RS = 2 kΩ

10 10 10 10

BC 856...860 EHP00386

F

kHz

dB

-2 -1 1 2

20

10

0

5

15

f

0

10

Noise figure F = ƒ(IC)

VCE = 5V, f = 120Hz

10 10 10 10

BC 856...860 EHP00387

F

mA

-3 -2 0 1

20

10

0

5

15

-1

10

= 1 M 100 k 10 k

dB

500

1 k

ΩΩΩ

S

R

Ω

C

Ι

Noise figure F = ƒ(IC)

VCE = 5V, f = 1kHz

10 10 10 10

BC 856...860 EHP00388

F

mA

-3 -2 0 1

20

10

0

5

15

-1

10

= 1 M

100 k

10 k

dB

500

1 k

ΩΩΩ

S

R

Ω

C

Ι

Noise figure F = ƒ(IC)

VCE = 5V, f = 10kHz

10 10 10 10

BC 856...860 EHP00389

mA

-3 -2 0 1

20

10

0

5

15

-1

10

dB

F

Ι

C

= 1 MRSΩ

Ω

100 k

Ω

10 k

500 Ω

Ω

1 k

Published by Infineon Technologies AG,

St.-Martin-Strasse 53,

81669 München

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characteristics.

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circuits, descriptions and charts stated herein.

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