BPX 43 BPX 43 fmof6019 NPN-Silizium-Fototransistor Silicon NPN Phototransistor Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Wesentliche Merkmale Features Speziell geeignet fur Anwendungen im Especially suitable for applications from Bereich von 450 nm bis 1100 nm Hohe Linearitat Hermetisch dichte Metallbauform (TO-18) mit Basisanschlu, geeignet bis 125 C Gruppiert lieferbar 450 nm to 1100 nm High linearity Hermetically sealed metal package (TO-18) with base connection suitable up to 125 C Available in groups Anwendungen Applications Lichtschranken fur Gleich- und Photointerrupters Industrial electronics For control and drive circuits Wechsellichtbetrieb Industrieelektronik "Messen/Steuern/Regeln" Typ Type Bestellnummer Ordering Code BPX43 Q62702-P16 BPX 43-2 Q62702-P16-S2 BPX 43-3 Q62702-P16-S3 BPX 43-4 Q62702-P16-S4 BPX 43-5 Q 62702-P16-S5 Semiconductor Group 223 10.95 BPX 43 Grenzwerte Maximum Ratings Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg - 55 ... + 125 C Lottemperatur bei Tauchlotung Lotstelle 2 mm vom Gehause, Lotzeit t 5 s Dip soldering temperature 2 mm distance from case bottom, soldering time t 5 s TS 260 C Lottemperatur bei Kolbenlotung Lotstelle 2 mm vom Gehause, Lotzeit t 3 s Iron soldering temperature 2 mm distance from case bottom, soldering time t 3 s TS 300 C Kollektor-Emitterspannung Collector-emitter voltage VCE 50 V Kollektorstrom Collector current IC 50 mA Kollektorspitzenstrom, < 10 s Collector surge current ICS 200 mA Emitter-Basisspannung Emitter-base voltage VEB 7 V Verlustleistung, TA = 25 C Total power dissipation Ptot 220 mW Warmewiderstand Thermal resistance RthJA 450 K/W Semiconductor Group 224 BPX 43 Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity S max 880 nm Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax 450 ... 1100 nm Bestrahlungsempfindliche Flache Radiant sensitive area A 0.675 mm2 Abmessung der Chipflache Dimensions of chip area LxB LxW 1x1 mm x mm Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface H 2.4 ... 3.0 mm Halbwinkel Half angle 15 Grad deg. IPCB IPCB 11 35 A A CCE CCB CEB 23 39 47 pF pF pF Dunkelstrom Dark current VCE = 25 V, E = 0 ICEO 20 ( 300) nA Semiconductor Group 225 Fotostrom der Kollektor-Basis-Fotodiode Photocurrent of collector-base photodiode Ee = 0.5 mW/cm2, VCB = 5 V Ev = 1000 Ix, Normlicht/standard light A, VCB = 5 V Kapazitat Capacitance VCE = 0 V, f = 1 MHz, E = 0 VCB = 0 V, f = 1 MHz, E = 0 VEB = 0 V, f = 1 MHz, E = 0 BPX 43 Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Description Symbol Symbol Wert Value -2 Fotostrom, = 950 nm Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V IPCE Ev = 1000 Ix, Normlicht/standard light A, IPCE VCE = 5 V -3 Einheit Unit -4 -5 0.8 ... 1.6 1.25 ... 2.5 2.0 ... 4.0 3.2 mA 3.8 6.0 9.5 15.0 mA Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k t r, t f 9 12 15 18 s Kollektor-Emitter-Sattigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) x 0.3 Ee = 0.5 mW/cm2 VCEsat 200 220 240 260 mV Stromverstarkung Current gain Ee = 0.5 mW/cm2, VCE = 5 V IPCE IPCB 110 170 270 430 1) 1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe IPCEmin is the min. photocurrent of the specified group Semiconductor Group 226 BPX 43 Relative spectral sensitivity Srel = f () Photocurrent IPCE = f (Ee), VCE = 5 V Total power dissipation Ptot = f (TA) Output characteristics IC = f (VCE), IB = Parameter Output characteristics IC = f (VCE), IB = Parameter Dark current ICEO = f (VCE), E = 0 Photocurrent IPCE/IPCE25o = f (TA), VCE = 5 V Dark current ICEO/ICEO25o = f (TA), VCE = 25 V, E = 0 Collector-emitter capacitance CCE = f (VCE), f = 1 MHz, E = 0 Semiconductor Group 227 BPX 43 Collector-base capacitance CCB = f (VCB), f = 1 MHz, E = 0 Emitter-base capacitance CEB = f (VEB), f = 1 MHz, E = 0 Directional characteristics Srel = f () Semiconductor Group 228