SEMITRANSTM 2N
Trench IGBT Modules
SKM 100GB176DN
Preliminary Data
Features
 
  
   

    
  ! " #
Typical Applications
$  %  &'& (
'&) $
*  +" ,-
GB
Absolute Maximum Ratings .& /   %
Symbol Conditions Values Units
IGBT
 0'))
# .& +2)- / 0.& +3)- $
#45 0  0&) $
6 7 .)
8 +- 9*4$#9: ;  ( <),,,= 0&) +0.&- /
 $ 0 , <)))
Inverse diode
#> .& +2)- / 0)) +')- $
#>45 0  0&) $
#>5 0) ? ,? 8 0&) / '.) $
Characteristics .& /   %
Symbol Conditions min. typ. max. Units
IGBT
6+- 6  # @ $ & . & 2 ! <
# 6 )   8 .& +0.&- / ) 0 ) @ $
+9- 8 .& +0.&- / 0 +) 3- 0 . +0 0-
 6 0& 8 .& +0.&- / 0@ +.)- 0' A
+- # '& $ 6 0&   . +. <- . <&
 %  % ! >
 6 )  .& 0 5B ) ! >
 ) < >
C .& 
4D=D , ( .& +0.&- / ) '& +0- A
%+-  0.)) # '& $ @)) 
46 46 0& A 8 0.& / <& 
%+- 6 7 0& 2@) 
0<) 
 +- <! +.2- E
Inverse diode
>  #> '& $? 6 )?8 .& +0.&- / 0 ! +0 !- 0 3 +0 3-
+9- 8 .& +0.&- / 0 0 +) 3- 0 @ +0 0-
8 .& +0.&- / ! ' +3 @- 2 +00- A
#445 #> '& $? 8 0.& + - / 3& $
F %G% 0'!) $GH .' H
 6 ) 0' E
Thermal characteristics
4+8(-  #6I ) .< JGK
4+8(-L  # L% ) <& JGK
4+(-  % ) )& JGK
Mechanical data
5 M 5! @ & :
5  5& . & & :
0!)
SKM 100GB176DN
1 14-06-2005 SEN © by SEMIKRON
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC= f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic
SKM 100GB176DN
2 14-06-2005 SEN © by SEMIKRON
Fig. 7 Typ. switching times vs. ICFig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Zthp(j-c) = f (tp);D=tp/tc= tp*f
Fig. 10 Transient thermal impedance of FWD
Zthp(j-c) = f (tp);D=tp/tc= tp*f
Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current
SKM 100GB176DN
3 14-06-2005 SEN © by SEMIKRON
Fig. 13 Typ. CAL diode recovered charge
UL Recognized
File no. E 63 532 Dimensions in mm
 L 3@
6I  L 3@
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
SKM 100GB176DN
4 14-06-2005 SEN © by SEMIKRON