ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1230-03 Aug 07 page 2 of 13
GCT Data
On-state (see Fig. 3 to 6, 23)
Maximum rated values Note 1
Parameter Symbol
Conditions min typ max Unit
Max. average on-state
current IT(AV)M Half sine wave, TC = 85 °C,
Double side cooled 1010 A
Max. RMS on-state current I
T(RMS) 1590 A
Max. peak non-repetitive
surge on-state current ITSM 17×103 A
Limiting load integral I2t
tp = 10 ms, Tj = 125 °C, sine wave
after surge: VD = VR = 0 V 1.45×106 A2s
Max. peak non-repetitive
surge on-state current ITSM 25×103 A
Limiting load integral I2t
tp = 3 ms, Tj = 125 °C, sine wave
after surge: VD = VR = 0 V 938×103 A2s
Critical rate of rise of on-
state current diT/dtcr For higher diT/dt and current lower
than 100 A an external retrigger
pulse is required.
100 A/µs
Characteristic values
Parameter Symbol
Conditions min typ max Unit
On-state voltage VT IT = 2200 A, Tj = 125 °C 2.3 2.6 2.95 V
Threshold voltage V(T0) 1.8 V
Slope resistance rT Tj = 125 °C
IT = 400...3000 A 0.533 mΩ
Turn-on switching (see Fig. 23, 25)
Maximum rated values Note 1
Parameter Symbol
Conditions min typ max Unit
Critical rate of rise of on-
state current diT/dtcr f = 0..500 Hz, Tj = 125 °C,
IT = 2200 A, VD = 2800 V 650 A/µs
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Turn-on delay time tdon 3.5 µs
Turn-on delay time status
feedback tdon SF 7 µs
Rise time tr 1 µs
Turn-on energy per pulse Eon
VD = 2800 V, Tj = 125 °C
IT = 2200 A, di/dt = VD / Li
Li = 5 µH
CCL = 10 µF, LCL = 0.3 µH
0.85 J
Turn-off switching (see Fig. 7, 8, 23, 25)
Maximum rated values Note 1
Parameter Symbol
Conditions min typ max Unit
Max. controllable turn-off
current ITGQM VDM ≤ VDRM, Tj = 125 °C,
VD = 2800 V, RS = 0.65 Ω,
CCL = 10 µF, LCL ≤ 0.3 µH
2200 A
Max. controllable turn-off
current ITGQM VDM ≤ VDRM, Tj = 125 °C,
VD = 3200 V, RS = 0.65 Ω,
CCL = 10 µF, LCL ≤ 0.3 µH
1100 A
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Turn-off delay time tdoff 7 µs
Turn-off delay time status
feedback tdoff SF 7 µs
Turn-off energy per pulse Eoff
VD = 2800 V, Tj = 125 °C
VDM ≤ VDRM, RS = 0.65 Ω
ITGQ = 2200 A, Li = 5 µH
CCL = 10 µF, LCL = 0.3 µH,
7.8 12 J