DMNH10H028SK3Q Green 100V 175C N-CHANNEL ENHANCEMENT MODE MOSFET INFORMATION ADVANCED NEW PRODUCT Product Summary V(BR)DSS RDS(ON) max 100V 28m @ VGS = 10V Features ID max TC = +25C 55A Description and Applications Environments 100% Unclamped Inductive Switching - Ensures More Reliable and Robust End Application Low RDS(ON) - Minimizes Power Losses Low Qg - Minimizes Switching Losses Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Engine Management Systems Body Control Electronics DC-DC Converters Top View Rated to +175C - Ideal for High Ambient Temperature Case: TO252 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) Pin Out Top View Equivalent Circuit Ordering Information (Note 5) Part Number DMNH10H028SK3Q-13 Notes: Case TO252 Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information H1H28S YYWW DMNH10H028SK3Q Document number: DS38225 Rev. 1 - 2 = Manufacturer's Marking H1H28S = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 15 = 2015) WW = Week Code (01 to 53) 1 of 7 www.diodes.com October 2015 (c) Diodes Incorporated DMNH10H028SK3Q Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol Drain-Source Voltage Gate-Source Voltage TC = +25C TC = +100C INFORMATION ADVANCED NEW PRODUCT Continuous Drain Current, VGS = 10V VDSS Value 100 Unit V VGSS 20 V ID 55 39 A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) IDM 58 A IS 2.2 A Avalanche Current, L = 0.1mH IAS 29 A Avalanche Energy, L = 0.1mH EAS 43 mJ Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Symbol RJC Value 2.0 74 25 3.7 40 13 1.2 TJ, TSTG -55 to +175 Total Power Dissipation (Note 6) PD Steady State t<10s Thermal Resistance, Junction to Ambient (Note 6) RJA Total Power Dissipation (Note 7) PD Steady State t<10s Thermal Resistance, Junction to Ambient (Note 7) RJA Thermal Resistance, Junction to Case Operating and Storage Temperature Range Unit W C/W W C/W C Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit Test Condition BVDSS 100 -- -- V VGS = 0V, ID = 250A IDSS -- -- 1 A VDS = 100V, VGS = 0V nA VGS = 20V, VDS = 0V VDS = VGS, ID = 250A Zero Gate Voltage Drain Current, TJ = +25C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage IGSS -- -- 100 VGS(TH) 2.0 2.5 4.0 V Static Drain-Source On-Resistance RDS(ON) -- 20 28 m VGS = 10V, ID = 20A VSD -- 0.7 1.2 V VGS = 0V, IS = 1.0A pF pF Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Ciss -- 2,245 -- Coss -- -- Gate Resistance Crss Rg -- -- 173 68 Total Gate Charge (VGS = 10V) Qg -- Total Gate Charge (VGS = 6V) Gate-Source Charge Gate-Drain Charge Qg Qgs Turn-On Delay Time -- -- pF 1.9 36 -- nC -- 22 -- nC -- 7.3 -- Qgd tD(ON) -- -- -- 9.2 6.4 nC nC -- ns Turn-On Rise Time tR -- 5.8 -- ns Turn-Off Delay Time tD(OFF) -- 17.8 -- ns tF -- 4.8 -- ns tRR -- -- 35 -- -- ns nC Reverse Transfer Capacitance Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: QRR 47 VDS = 50V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 50V, ID = 20A VGS = 10V, VDS = 50V, RG = 3, ID = 20A IF = 20A, di/dt = 100A/s IF = 20A, di/dt = 100A/s 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMNH10H028SK3Q Document number: DS38225 Rev. 1 - 2 2 of 7 www.diodes.com October 2015 (c) Diodes Incorporated DMNH10H028SK3Q 30 30.0 VGS=4.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 VGS=6.0V VGS=8.0V 20.0 VGS=4.0V VGS=10.0V 15.0 10.0 15 125 85 150 10 25 175 VGS=3.5V -55 0 0.0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 0.024 0.022 0.02 2 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 20 5 5.0 VGS=10.0V 0.018 0.016 0.014 0.06 0.05 0.04 175 150 0.04 125 85 0.03 25 0.02 -55 0.01 ID=20A 0.03 0.02 0.01 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS=10V 0.05 5 0.07 5 10 15 20 25 30 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 0.06 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 0.08 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () INFORMATION ADVANCED NEW PRODUCT VDS=5V VGS=5.0V 25.0 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 20 2.6 2.4 VGS=10V, ID=20A 2.2 2 1.8 1.6 1.4 VGS=10V, ID=10A 1.2 1 0.8 0.6 0.4 0 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMNH10H028SK3Q Document number: DS38225 Rev. 1 - 2 3 of 7 www.diodes.com -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE () Figure 6. On-Resistance Variation with Temperature October 2015 (c) Diodes Incorporated 3.2 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.05 0.045 0.04 VGS=10V, ID=20A 0.035 0.03 0.025 VGS=10V, ID=10A 0.02 0.015 3 2.8 2.6 2.4 2 ID=250A 1.8 1.6 1.4 1.2 1 -50 -50 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE () Figure 8. Gate Threshold Variation vs. Junction Temperature 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE () Figure 7. On-Resistance Variation with Temperature -25 -25 10000 CT, JUNCTION CAPACITANCE (pF) 30 25 IS, SOURCE CURRENT (A) ID=1mA 2.2 0.01 VGS=0V, TA=85 20 VGS=0V, TA=125 15 VGS=0V, TA=150 10 VGS=0V, TA=25 VGS=0V, TA=175 5 f=1MHz Ciss 1000 Coss Crss 100 VGS=0V, TA=-55 10 0 0 0.3 0.6 0.9 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 0 1.2 10 20 30 40 50 60 70 80 90 100 VDS, DRAIN-SOURCE VOLTAGE(V) Figure 10. Typical Junction Capacitance 100 10 RDS(ON) Limited PW =1ms 10 ID, DRAIN CURRENT (A) 8 VGS (V) INFORMATION ADVANCED NEW PRODUCT DMNH10H028SK3Q 6 4 VDS=50V, ID=20A 2 PW =10ms 1 PW =100ms PW =1s 0.1 0.01 PW =10s TJ(Max)=175 TC=25 DC Single Pulse DUT on 1*MRP board VGS=20V 0.001 0 0 5 10 15 20 25 30 Qg (nC) Figure 11. Gate Charge DMNH10H028SK3Q Document number: DS38225 Rev. 1 - 2 35 40 4 of 7 www.diodes.com 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 1000 October 2015 (c) Diodes Incorporated DMNH10H028SK3Q r(t), TRANSIENT THERMAL RESISTANCE INFORMATION ADVANCED NEW PRODUCT 1 D=0.5 D=0.9 D=0.3 0.1 D=0.7 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RJA(t)=r(t) * RJA RJA=78C/W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 0.001 DMNH10H028SK3Q Document number: DS38225 Rev. 1 - 2 0.01 0.1 1 10 100 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance 5 of 7 www.diodes.com 1000 10000 October 2015 (c) Diodes Incorporated DMNH10H028SK3Q Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. E A b3 c L3 D A2 L4 e H b(3x) b2(2x) Gauge Plane 0.508 D1 E1 Seating Plane a INFORMATION ADVANCED NEW PRODUCT 7 1 L A1 TO252 (DPAK) Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 e 2.286 E 6.45 6.70 6.58 E1 4.32 H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0 10 All Dimensions in mm 2.74REF Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Dimensions C X X1 Y Y1 Y2 Y1 Y2 Value (in mm) 4.572 1.060 5.632 2.600 5.700 10.700 C Y X DMNH10H028SK3Q Document number: DS38225 Rev. 1 - 2 6 of 7 www.diodes.com October 2015 (c) Diodes Incorporated DMNH10H028SK3Q IMPORTANT NOTICE INFORMATION ADVANCED NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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