DMNH10H028SK3Q
Document number: DS38225 Rev. 1 - 2
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October 2015
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DMNH10H028SK3Q
NEW PRODUCT
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
RDS(ON) max
ID max
TC = +25°C
100V
28mΩ @ VGS = 10V
55A
Description and Applications
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Engine Management Systems
Body Control Electronics
DC-DC Converters
Features
Rated to +175°C – Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switching – Ensures More Reliable
and Robust End Application
Low RDS(ON) – Minimizes Power Losses
Low Qg – Minimizes Switching Losses
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: TO252
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin Annealed over Copper Leadframe
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
Ordering Information (Note 5)
Part Number
Case
Packaging
DMNH10H028SK3Q-13
TO252
2,500/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Equivalent Circuit
Pin Out Top View
= Manufacturer’s Marking
H1H28S = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 15 = 2015)
WW = Week Code (01 to 53)
Top View
Green
YYWW
H1H28S
DMNH10H028SK3Q
Document number: DS38225 Rev. 1 - 2
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DMNH10H028SK3Q
NE W PRODUCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current, VGS = 10V
TC = +25°C
TC = +100°C
ID
55
39
A
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%)
IDM
58
A
Maximum Continuous Body Diode Forward Current (Note 6)
IS
2.2
A
Avalanche Current, L = 0.1mH
IAS
29
A
Avalanche Energy, L = 0.1mH
EAS
43
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 6)
PD
2.0
W
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
RJA
74
°C/W
t<10s
25
Total Power Dissipation (Note 7)
PD
3.7
W
Thermal Resistance, Junction to Ambient (Note 7)
Steady State
RJA
40
°C/W
t<10s
13
Thermal Resistance, Junction to Case
RJC
1.2
Operating and Storage Temperature Range
TJ, TSTG
-55 to +175
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
100
—
—
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current, TJ = +25°C
IDSS
—
—
1
µA
VDS = 100V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(TH)
2.0
2.5
4.0
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS(ON)
—
20
28
mΩ
VGS = 10V, ID = 20A
Diode Forward Voltage
VSD
—
0.7
1.2
V
VGS = 0V, IS = 1.0A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
—
2,245
—
pF
VDS = 50V, VGS = 0V,
f = 1MHz
Output Capacitance
Coss
—
173
—
pF
Reverse Transfer Capacitance
Crss
—
68
—
pF
Gate Resistance
Rg
—
1.9
—
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = 10V)
Qg
—
36
—
nC
VDS = 50V, ID = 20A
Total Gate Charge (VGS = 6V)
Qg
—
22
—
nC
Gate-Source Charge
Qgs
—
7.3
—
nC
Gate-Drain Charge
Qgd
—
9.2
—
nC
Turn-On Delay Time
tD(ON)
—
6.4
—
ns
VGS = 10V, VDS = 50V,
RG = 3Ω, ID = 20A
Turn-On Rise Time
tR
—
5.8
—
ns
Turn-Off Delay Time
tD(OFF)
—
17.8
—
ns
Turn-Off Fall Time
tF
—
4.8
—
ns
Body Diode Reverse Recovery Time
tRR
—
35
—
ns
IF = 20A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge
QRR
—
47
—
nC
IF = 20A, di/dt = 100A/μs
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMNH10H028SK3Q
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DMNH10H028SK3Q
NE W PRODUCT
0.0
5.0
10.0
15.0
20.0
25.0
30.0
0 1 2 3 4 5
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
VGS=3.5V
VGS=4.0V
VGS=4.5V
VGS=5.0V
VGS=6.0V
VGS=8.0V
VGS=10.0V
0
5
10
15
20
25
30
2 2.5 3 3.5 4 4.5 5
ID, DRAIN CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
VDS=5V
-55℃
25℃
85℃
175℃
150℃
125℃
0.014
0.016
0.018
0.02
0.022
0.024
0 5 10 15 20 25 30
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
VGS=10.0V
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
2 4 6 8 10 12 14 16 18 20
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
ID=20A
0
0.01
0.02
0.03
0.04
0.05
0.06
0 5 10 15 20 25 30
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
VGS=10V
-55℃
25℃
85℃
125℃
150℃
175℃
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
-50 -25 025 50 75 100 125 150 175
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
VGS=10V, ID=10A
VGS=10V, ID=20A
DMNH10H028SK3Q
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DMNH10H028SK3Q
NE W PRODUCT
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0.045
0.05
-50 -25 025 50 75 100 125 150 175
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
VGS=10V, ID=10A
VGS=10V, ID=20A
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
-50 -25 025 50 75 100 125 150 175
VGS(TH), GATE THRESHOLD VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
ID=250µA
ID=1mA
0
5
10
15
20
25
30
0 0.3 0.6 0.9 1.2
IS, SOURCE CURRENT (A)
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
VGS=0V,
TA=-55℃
VGS=0V,
TA=25℃
VGS=0V,
TA=85℃
VGS=0V,
TA=125℃
VGS=0V,
TA=150℃
VGS=0V,
TA=175℃
10
100
1000
10000
010 20 30 40 50 60 70 80 90 100
CT, JUNCTION CAPACITANCE (pF)
VDS, DRAIN-SOURCE VOLTAGE(V)
Figure 10. Typical Junction Capacitance
f=1MHz
Ciss
Coss
Crss
0
2
4
6
8
10
0 5 10 15 20 25 30 35 40
VGS (V)
Qg (nC)
Figure 11. Gate Charge
VDS=50V, ID=20A
0.001
0.01
0.1
1
10
100
0.1 1 10 100 1000
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
TJ(Max)=175℃
TC=25℃
Single Pulse
DUT on 1*MRP board
VGS=20V
RDS(ON) Limited
PW=10s
DC
PW=1s
PW=100ms
PW=10ms
PW=1ms
DMNH10H028SK3Q
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DMNH10H028SK3Q
NE W PRODUCT
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10 100 1000 10000
r(t), TRANSIENT THERMAL RESISTANCE
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
RθJA(t)=r(t) * RθJA
RθJA=78°C/W
Duty Cycle, D=t1 / t2
D=0.9
D=0.7
D=0.5
RθJA(t)=r(t) * RθJA
RθJA=78°C/W
Duty Cycle, D=t1 / t2
D=0.9
D=0.7
D=0.3
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
D=Single Pulse
DMNH10H028SK3Q
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
TO252 (DPAK)
Dim
Min
Max
Typ
A
2.19
2.39
2.29
A1
0.00
0.13
0.08
A2
0.97
1.17
1.07
b
0.64
0.88
0.783
b2
0.76
1.14
0.95
b3
5.21
5.46
5.33
c
0.45
0.58
0.531
D
6.00
6.20
6.10
D1
5.21
-
-
e
-
-
2.286
E
6.45
6.70
6.58
E1
4.32
-
-
H
9.40
10.41
9.91
L
1.40
1.78
1.59
L3
0.88
1.27
1.08
L4
0.64
1.02
0.83
a
0°
10°
-
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Dimensions
Value (in mm)
C
4.572
X
1.060
X1
5.632
Y
2.600
Y1
5.700
Y2
10.700
b3
E
L3
D
L4
b2(2x)
b(3x)
e
c
A
7°± 1°
H
Seating Plane
A1
Gauge Plane
a
0.508
L
2.74REF
D1
A2
E1
X1
X
Y2
Y1
Y
C
DMNH10H028SK3Q
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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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