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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FTCO3V455A1 3-Phase Inverter Automotive Power Module General Description Features The FTCO3V455A1 is a 40V low Rds(on) automotive qualified power module featuring a 3-phase MOSFET inverter optimized for 12V battery systems. It includes a precision shunt resistor for current sensing an NTC for temperature sensing and an RC snubber circuit. * 40V-150A 3-phase trench MOSFET inverter bridge * 1% precision shunt current sensing * Temperature sensing * DBC substrate The module utilizes Fairchild's trench MOSFET technology and it is designed to provide a very compact and high performance variable speed motor drive for applications like electric power steering, electro-hydraulic power steering, electric water pumps, electric oil pumps. The power module is 100% lead free, RoHS and UL compliant. * 100% lead free and RoHS compliant 2000/53/C directive. * UL94V-0 compliant * Isolation rating of 2500Vrms/min * Mounting through screws * Automotive qualified Benefits * Low junction-sink thermal resistance * Low inverter electrical resistance * High current handling * Compact motor design * Highly integrated compact design * Better EMC and electrical isolation * Easy and reliable installation * Improved overall system reliability Applications Figure 1.schematic * Electric and Electro-Hydraulic Power Steering * Electric Water Pump * Electric Oil Pump * Electric Fan Figure 2. package Absolute Maximum Ratings (TJ = 25C, Symbol Unless Otherwise Specified) Rating Unit VDS(Q1~Q6) Drain to Source Voltage Parameter 40 V VGS(Q1~Q6) Gate to Source Voltage 20 V ID(Q1~Q6) Drain Current Continuous(TC = 25C, VGS = 10V) 150 A EAS(Q1~Q6) Single Pulse Avalanche Energy (*Note 1) 947 mJ PD Power dissipation 115 W TJ Maximum Junction Temperature 175 C TSTG Storage Temperature 125 C (c)2017 Semiconductor Components Industries, LLC FTCO3V455A1 Rev. 1.1 1 www.fairchildsemi.com www.onsemi.com FTCO3V455A1 3-Phase Inverter Automotive Power Module April 2017 FTCO3V455A1 3-Phase Inverter Automotive Power Module Pin Configuration Figure 3. Pin Description Pin Number 1 Pin Name Pin Descriptions TEMP 1 NTC Thermistor Terminal 1 2 TEMP 2 NTC Thermistor Terminal 2 3 PHASE W SENSE Source of HS W and Drain of LS W 4 GATE HS W Gate of HS phase W MOSFET 5 GATE LS W Gate of LS phase W MOSFET 6 PHASE V SENSE Source of HS V and Drain of LS V 7 GATE HS V Gate of HS phase V MOSFET 8 GATE LS V Gate of LS phase V MOSFET 9 PHASE U SENSE 10 GATE HS U 11 VBAT SENSE 12 GATE LS U 13 SHUNT P Source of HS U and Drain of LS U Gate of HS phase U MOSFET Drain of HS U, V and W MOSFET Gate of LS phase U MOSFET Source of LS U, V W MOSFETS / Shunt + Negative shunt terminal (shunt -) 14 SHUNT N 15 VBAT Positive battery terminal 16 GND 17 PHASE U Negative battery terminal Motor phase U 18 PHASE V Motor phase V 19 PHASE W Motor phase W (c)2017 Semiconductor Components Industries, LLC FTCO3V455A1 Rev. 1.1 2 www.fairchildsemi.com www.onsemi.com VBAT VBAT SENSE GATE HS U GATE HS V GATE HS W PHASE U PHASE1 SENSE PHASE V PHASE2 SENSE PHASE W PHASE3 SENSE GATE L S U GATE L S V GATE LS W SHUNT P CSR SHUNT N GND TEMP 1 TEMP 2 Figure 4. (c)2017 Semiconductor Components Industries, LLC FTCO3V455A1 Rev. 1.1 3 www.fairchildsemi.com www.onsemi.com FTCO3V455A1 3-Phase Inverter Automotive Power Module Internal Equivalent Circuit FTCO3V455A1 3-Phase Inverter Automotive Power Module Flammability Information All materials present in the power module meet UL flammability rating class 94V-0 or higher. Solder Solder used is a lead free SnAgCu alloy. Compliance to RoHS The Power Module is 100% lead free and RoHS compiant with the 2000/53/C directive. (c)2017 Semiconductor Components Industries, LLC FTCO3V455A1 Rev. 1.1 4 www.fairchildsemi.com www.onsemi.com Symbol Unless Otherwise Specified) Parameter Rating Unit VDS(Q1~Q6) Drain to Source Voltage 40 V VGS(Q1~Q6) Gate to Source Voltage 20 V ID(Q1~Q6) Drain Current Continuous(TC = 25C, V GS = 10V) 150 A EAS(Q1~Q6) Single Pulse Avalanche Energy (*Note 1) 947 mJ PD Power dissipation 115 W TJ Maximum Junction Temperature 175 C TSTG Storage Temperature 125 C Thermal Resistance Symbol Min. Typ. Max. Unit Q1 Thermal Resistance J -C - 0.8 1.1 C/W Thermal ResisQ2 Thermal Resistance J -C Junction to tance case, Single Inverter Q3 Thermal Resistance J -C FET, chip center Q4 Thermal Resistance J -C - 0.8 1.1 C/W - 0.8 1.1 C/W - 0.8 1.1 C/W (*Note 2) - 0.8 1.1 C/W 0.8 Rthjc Parameter Q5 Thermal Resistance J -C Q6 Thermal Resistance J -C - 1.1 C/W TJ Maximum Junction Temperature - 175 C TS Operating Sink Temperature -40 120 C TSTG Storage Temperature -40 125 C Notes: .* Note 1 - Starting Tj=25C,Vds=20V,Ias=64A,L= 480uH. * Note 2 -These values are based on Thermal simulations and PV level measurements. These values assume a single MOSFET is on, and the test condition for referenced temperature is "Chip Center". This means that the DT is measured between the Tj of each MOSFET and the temperature of the case located immediately under the center of the chip. (c)2017 Semiconductor Components Industries, LLC FTCO3V455A1 Rev. 1.1 5 www.fairchildsemi.com www.onsemi.com FTCO3V455A1 3-Phase Inverter Automotive Power Module Absolute Maximum Ratings (TJ = 25C, Symbol VTH Parameter D-S Breakdown Voltage (Inverter MOSFETs) Gate to Source Voltage (Inverter MOSFETs) Threshold Voltage (Inverter MOSFETs) VSD MOSFET Body Diode Forward Voltage BVDSS VGS RDS(ON)Q1 RDS(ON)Q2 RDS(ON)Q3 RDS(ON)Q4 RDS(ON)Q5 RDS(ON)Q6 IDSS IGSS Inverter High Side MOSFETs Q1 (See *Note3) Inverter High Side MOSFETs Q2 (See *Note3) Inverter High Side MOSFETs Q3 (See *Note3) Inverter Low Side MOSFETs Q4 (See *Note3) Inverter Low Side MOSFETs Q5 (See *Note3) Inverter Low Side MOSFETs Q6 (See *Note3) Inverter MOSFETs (UH,UL,VH,VL,WH,WL) Inverter MOSFETs Gate to Source Leakage Current Total loop resistance VLINK(+) - V0 (-) Unless Otherwise Specified) Test Conditions VGS=0, ID=250uA VGS=VDS, ID=250uA, Tj=25C Min Typ Max Units 40 - - V -20 - 20 V 2.0 2.8 4.0 V 0.8 1.28 V VGS=0V, IS=80A, Tj=25C VGS=10V, ID=80A, Tj=25C - 1.15 1.66 m VGS=10V, ID=80A, Tj=25C - 1.22 1.73 m VGS=10V, ID=80A, Tj=25C - 1.31 1.82 m VGS=10V, ID=80A, Tj=25C - 1.36 1.87 m VGS=10V, ID=80A, Tj=25C - 1.57 2.08 m VGS=10V, ID=80A, Tj=25C - 1.86 2.32 m VGS=0V, VDS=32V, Tj=25C - - 1.0 uA VGS=20V - - 100 nA VGS=10V,ID=80A,Tj=25C - 4.69 5.5 m * Note 3 - All Mosfets have same die size and Rdson. The different Rdson values listed in the datasheet are due to the different access points available inside the module for Rdson measurement. While the high side MOSFETs (Q1, Q2, Q3) have source sense wire bonds, the low side mosfets (Q4, Q5, Q6) do not have source sense wire bonds, thus resulting in higher Rdson values. Temperature Sense (NTC Thermistor) Symbol Voltage Test Conditions Current=1mA, Temperature=25C Test Time Min 7.5 Typ - Max 12 Units V Test Time Min Typ Max Units 0.46 - 0.53 m T=0.5ms Current Sense Resistor Symbol Test Conditions Resistance Current Senset resistor current = 80A (c)2017 Semiconductor Components Industries, LLC FTCO3V455A1 Rev. 1.1 T=0.5ms 6 www.fairchildsemi.com www.onsemi.com FTCO3V455A1 3-Phase Inverter Automotive Power Module Electrical Characteristics (TJ = 25C, 4000 ID, DRAIN CURRENT (A) 1000 IAS, AVALANCHE CURRENT (A) 500 If R = 0 10us tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 100us 100 10 LIMITED BY PACKAGE 1ms 1 0.1 OPERATION IN THIS SINGLE PULSE TJ = MAX RATED AREA MAY BE LIMITED BY rDS(on) T = 25oC C 1 10ms DC 10 VDS, DRAIN TO SOURCE VOLTAGE (V) o STARTING TJ = 25 C 10 o STARTING TJ = 150 C 1 0.01 100 10 100 0.1 1 tAV, TIME IN AVALANCHE (ms) 1000 5000 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching Capability Figure 5. Forward Bias Safe Operating Area 160 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDD = 5V 120 TJ = 175oC 80 TJ = 25oC TJ = -55oC 40 0 2.0 2.5 3.0 3.5 VGS = 10V VGS = 5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 160 4.0 4.5 120 VGS = 4.5V 80 VGS = 4V 40 VGS = 3.5V 0 5.0 0 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 40 TJ = 25oC TJ = 175oC 20 10 0 3 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage (c)2017 Semiconductor Components Industries, LLC FTCO3V455A1 Rev. 1.1 2 3 4 Figure 8. Saturation Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 7. Transfer Characteristics 30 1 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) 50 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 1.8 1.6 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 1.4 1.2 1.0 0.8 0.6 -80 ID = 80A VGS = 10V -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 7 www.fairchildsemi.com www.onsemi.com FTCO3V455A1 3-Phase Inverter Automotive Power Module Typical Characteristics (Generated using MOSFETs assembled in a TO263 package, for reference purposes only) 1.15 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.2 NORMALIZED GATE THRESHOLD VOLTAGE VGS = VDS ID = 250A 1.0 0.8 0.6 0.4 -80 0 40 80 120 160 -40 TJ, JUNCTION TEMPERATURE(oC) 200 VGS, GATE TO SOURCE VOLTAGE(V) CAPACITANCE (pF) Ciss 10000 Coss Crss f = 1MHz VGS = 0V 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 (c)2017 Semiconductor Components Industries, LLC 1.00 0.95 0.90 -80 -40 0 40 80 120 160 200 10 ID = 80A VDD = 15V 8 VDD = 25V 6 VDD = 20V 4 2 0 0 50 100 150 200 250 Qg, GATE CHARGE(nC) Figure 13. Capacitance vs Drain to Source Voltage FTCO3V455A1 Rev. 1.1 1.05 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 40000 100 0.1 1.10 TJ, JUNCTION TEMPERATURE (oC) Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 1000 ID = 250A Figure 14. Gate Charge vs Gate to Source Voltage 8 www.fairchildsemi.com www.onsemi.com FTCO3V455A1 3-Phase Inverter Automotive Power Module Typical Characteristics (Generated using MOSFETs assembled in a TO263 package, for reference purposes only) Parameter Limits Condition Device Flatness Note Fig.15 Mounting Screw: - M3, Recommended 0.7N.m Mounting Torque Unit Min. 0 Typ. - Max. +200 0.6 0.7 0.8 N.m - 20 - g Weight um 1 Fig. 15. Flatness Measurement Position Package Marking and Ordering Information Device Marking FTCO3V455A1 (c)2017 Semiconductor Components Industries, LLC FTCO3V455A1 Rev. 1.1 MOSFET PCF33478 9 Packing Type Quantity Tube 11 www.fairchildsemi.com www.onsemi.com FTCO3V455A1 3-Phase Inverter Automotive Power Module Mechanical Characteristics and Ratings FTCO3V455A1 3-Phase Inverter Automotive Power Module VBAT TEMP 1 TEMP 2 PHASE W SENSE GATE HS W GATE LS W PHASE V SENSE GATE HS V GATE LS V PHASE U SENSE VBAT SENSE GATE HS U GATE LS U SHUNT P SHUNT N Detailed Package Outline Drawings GND PHASE U PHASE V PHASE W Figure 16. (c)2017 Semiconductor Components Industries, LLC FTCO3V455A1 Rev. 1.1 10 www.fairchildsemi.com www.onsemi.com FTCO3V455A1 3-Phase Inverter Automotive Power Module Detailed Package Outline Drawings Figure 17. (c)2017 Semiconductor Components Industries, LLC FTCO3V455A1 Rev. 1.1 11 www.fairchildsemi.com www.onsemi.com FTCO3V455A1 3-Phase Inverter Automotive Power Module (c)2017 Semiconductor Components Industries, LLC FTCO3V455A1 Rev. 1.1 12 www.fairchildsemi.com www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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