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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers

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FTCO3V455A1 Rev. 1.1

FTCO3V455A1 3-Phase Inverter Automotive Power Module

April 2017

FTCO3V455A1

3-Phase Inverter Automotive Power Module

General Description

The FTCO3V455A1 is a 40V low Rds(on) automotive qualified

Features

• 40V-150A 3-phase trench MOSFET inverter bridge

•1% precision shunt current sensing

• Temperature sensing

• DBC substrate

• 100% lead free and RoHS compliant 2000/53/C directive.

power module featuring a 3-phase MOSFET inverter optimized

for 12V battery systems. It includes a precision shunt resistor for

current sensing an NTC for temperature sensing and an RC

snubber circuit.

The module utilizes Fairchild's trench MOSFET technology and

it is designed to provide a very compact and high performance

variable speed motor drive for applications like electric power

steering, electro-hydraulic power steering, electric water pumps,

electric oil pumps. The power module is 100% lead free, RoHS

and UL compliant.

Benefits

• Low junction-sink thermal resistance

•Compact motor design

• Low inverter electrical resistance

• High current handling

• Highly integrated compact design

•Better EMC and electrical isolation

•Easy and reliable installation

• Improved overall system reliability

• UL94V-0 compliant

•Isolation rating of 2500Vrms/min

• Mounting through screws

• Automotive qualified

Applications

• Electric and Electro-Hydraulic Power Steering

•Electric Water Pump

• Electric Oil Pump

• Electric Fan

Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified)

Symbol Parameter Rating Unit

VDS(Q1~Q6) Drain to Source Voltage 40 V

VGS(Q1~Q6) Gate to Source Voltage ±20 V

ID(Q1~Q6)Drain Current Continuous(TCGS = 10V) 150 A

EAS(Q1~Q6) Single Pulse Avalanche Energy (*Note 1) 947 mJ

PDPower dissipation 115 W

TJMaximum Junction Temperature 175 °C

TSTG Storage Temperature 125 °C

Figure 1.schematic

Figure 2. package

= 25°C, V

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FTCO3V455A1 3-Phase Inverter Automotive Power Module

Pin Configuration

Pin Description

Figure 3.

Pin Number Pin Name Pin Descriptions

1TEMP 1 NTC Thermistor Terminal 1

2TEMP 2 NTC Thermistor Terminal 2

3PHASE W SENSE Source of HS W and Drain of LS W

4GATE HS W Gate of HS phase W MOSFET

5GATE LS W Gate of LS phase W MOSFET

6PHASE V SENSE Source of HS V and Drain of LS V

7GATE HS V Gate of HS phase V MOSFET

8GATE LS V Gate of LS phase V MOSFET

9PHASE U SENSE Source of HS U and Drain of LS U

10 GATE HS U Gate of HS phase U MOSFET

11 VBAT SENSE Drain of HS U, V and W MOSFET

12 GATE LS U Gate of LS phase U MOSFET

13 SHUNT P Source of LS U, V W MOSFETS / Shunt +

14 SHUNT N Negative shunt terminal (shunt -)

15 VBAT Positive battery terminal

16 GND Negative battery terminal

17 PHASE U Motor phase U

18 PHASE V Motor phase V

19 PHASE W Motor phase W

FTCO3V455A1 Rev. 1.1

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FTCO3V455A1 3-Phase Inverter Automotive Power Module

Internal Equivalent Circuit

Figure 4.

TEMP 1

TEMP 2

SHUNT N

SHUNT P

GATE HS W

GATE HS V

GATE HS U

VBAT SENSE

VBAT

PHASE U

PHASE V

PHASE W

GND

GATE L S U

GATE L

S V

GATE LS W

CSR

PHASE1 SENSE

PHASE2 SENSE

PHASE3 SENSE

FTCO3V455A1 Rev. 1.1

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FTCO3V455A1 3-Phase Inverter Automotive Power Module

Flammability Information

All materials present in the power module meet UL flammability rating class 94V-0 or higher.

Solder

Solder used is a lead free SnAgCu alloy.

Compliance to RoHS

The Power Module is 100% lead free and RoHS compiant with the 2000/53/C directive.

FTCO3V455A1 Rev. 1.1

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5

FTCO3V455A1 3-Phase Inverter Automotive Power Module

Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified)

Symbol Parameter Rating Unit

VDS(Q1~Q6) Drain to Source Voltage 40 V

VGS(Q1~Q6) Gate to Source Voltage ±20 V

ID(Q1~Q6)Drain Current Continuous(TC = 25°C, VGS = 10V) 150 A

EAS(Q1~Q6) Single Pulse Avalanche Energy (*Note 1) 947 mJ

PDPower dissipation 115 W

TJMaximum Junction Temperature 175 °C

TSTG Storage Temperature 125 °C

Thermal Resistance

Symbol Parameter Min. Typ. Max. Unit

Rthjc

Thermal Resis-

tance Junction to

case, Single Inverter

FET, chip center

(*Note 2)

Q1 Thermal Resistance J -C -0.8 1.1 °C/W

Q2 Thermal Resistance J -C -0.8 1.1 °C/W

Q3 Thermal Resistance J -C -0.8 1.1 °C/W

Q4 Thermal Resistance J -C -0.8 1.1 °C/W

Q5 Thermal Resistance J -C -0.8 1.1 °C/W

Q6 Thermal Resistance J -C -0.8 1.1 °C/W

TJMaximum Junction Temperature -175 °C

TSOperating Sink Temperature -40 120 °C

TSTG Storage Temperature -40 125 °C

Notes:

.* Note 1 - Starting Tj=25°C,Vds=20V,Ias=64A,L= 480uH.

* Note 2

-These values are based on Thermal simulations and PV level measurements.

These values assume a single MOSFET is on, and the test condition for referenced temperature is “Chip Center”.

This means that the DT is measured between the Tj of each MOSFET and the temperature of the case located immediately under

the center of the chip.

FTCO3V455A1 Rev. 1.1

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6

FTCO3V455A1 3-Phase Inverter Automotive Power Module

Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified)

Symbol Parameter Test Conditions Min Typ Max Units

BVDSS

D-S Breakdown Voltage

(Inverter MOSFETs) VGS=0, ID=250uA 40 -- V

VGS

Gate to Source Voltage

(Inverter MOSFETs) --20 -20 V

VTH

Threshold Voltage

(Inverter MOSFETs) VGS=VDS, ID=250uA, Tj=25°C 2.0 2.8 4.0 V

VSD MOSFET Body Diode Forward Voltage VGS=0V, IS=80A, Tj=25°C 0.8 1.28 V

RDS(ON)Q1

Inverter High Side MOSFETs Q1

(See *Note3) VGS=10V, ID=80A, Tj=25°C -mΩ

RDS(ON)Q2

Inverter High Side MOSFETs Q2

(See *Note3) VGS=10V, ID=80A, Tj=25°C -mΩ

RDS(ON)Q3

Inverter High Side MOSFETs Q3

(See *Note3) VGS=10V, ID=80A, Tj=25°C -mΩ

RDS(ON)Q4

Inverter Low Side MOSFETs Q4

(See *Note3) VGS=10V, ID=80A, Tj=25°C -mΩ

RDS(ON)Q5

Inverter Low Side MOSFETs Q5

(See *Note3) VGS=10V, ID=80A, Tj=25°C -mΩ

RDS(ON)Q6

Inverter Low Side MOSFETs Q6

(See *Note3) VGS=10V, ID=80A, Tj=25°C -mΩ

IDSS Inverter MOSFETs

(UH,UL,VH,VL,WH,WL) VGS=0V, VDS=32V, Tj=25°C - - 1.0 uA

IGSS Inverter MOSFETs

Gate to Source Leakage Current VGS=±20V - - ±100 nA

Total loop resistance VLINK(+) - V0 (-) VGS=10V,ID=80A,Tj=25°C -mΩ

Temperature Sense (NTC Thermistor)

Symbol Test Conditions Test Time Min Typ Max Units

Voltage Current=1mA, Temperature=25°C T=0.5ms 7.5 -12 V

Current Sense Resistor

Symbol Test Conditions Test Time Min Typ Max Units

Resistance Current Senset resistor current = 80A T=0.5ms 0.46 -0.53 mΩ

1.15 1.66

1.22 1.73

1.31 1.82

1.36 1.87

1.57 2.08

1.86 2.32

4.69 5.5

* Note 3 - All Mosfets have same die size and Rdson. The different Rdson values listed in the datasheet are due to the different access points available

inside the module for Rdson measurement. While the high side MOSFETs (Q1, Q2, Q3) have source sense wire bonds, the low side mosfets (Q4, Q5,

Q6) do not have source sense wire bonds, thus resulting in higher Rdson values.

FTCO3V455A1 Rev. 1.1

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7

FTCO3V455A1 3-Phase Inverter Automotive Power Module

Typical Characteristics (Generated using MOSFETs assembled in a TO263 package, for reference purposes only)

Figure 5.

110100

0.1

1

10

100

1000

LIMITED

BY PACKAGE

10us

100us

1ms

10ms

ID, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

OPERATION IN THIS

AREA MAY BE

LIMITED BY rDS(on)

SINGLE PULSE

TJ = MAX RATED

TC = 25oCDC

4000

Forward Bias Safe Operating Area

0.01 0.1 1 10 100 1000

1

10

100

500

STARTING TJ = 150oC

STARTING TJ = 25oC

IAS, AVALANCHE CURRENT (A)

tAV, TIME IN AVALANCHE (ms)

5000

t

AV

= (L)(I

AS

)/(1.3*RATED BV

DSS

- V

DD

)

If R = 0

If R

≠

0

t

AV

= (L/R)ln[(I

AS

*R)/(1.3*RATED BV

DSS

- V

DD

) +1]

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

Figure 7.

2.02.

53.03.54.04.55.0

0

40

80

120

160

TJ = -55oC

TJ = 25oC

TJ = 175oC

PULSE DURATION = 80μs

DUTY CYCLE = 0.5% MAX

VDD = 5V

ID, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

Transfer Characteristics Figure 8.

01234

0

40

80

120

160

ID, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80μs

DUTY CYCLE = 0.5% MAX

VGS = 10V

VGS = 5V

VGS = 4.5V

VGS = 3.5V

VGS = 4V

Saturation Characteristics

Figure 9.

3456789

10

0

10

20

30

40

50

rDS(on), DRAIN TO SOURCE

ON-RESISTANCE (mΩ)

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 25oC

TJ = 175oC

PULSE DURATION = 80μs

DUTY CYCLE = 0.5% MAX

Drain to Source On-Resistance

Variation vs Gate to Source Voltage

Figure 10.

-80 -40 0 40 80 120 160 200

0.6

0.8

1.0

1.2

1.4

1.6

1.8

TJ, JUNCTION TEMPERATURE(oC)

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

ID = 80A

VGS = 10V

PULSE DURATION = 80μs

DUTY CYCLE = 0.5% MAX

Normalized Drain to Source On

Resistance vs Junction Temperature

Figure 9.

3456789

1

0

10

20

30

40

50

rDS(on), DRAIN TO SOURCE

ON-RESISTANCE (mΩ)

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 25oC

TJ = 175oC

PULSE DURATION = 80μs

DUTY CYCLE = 0.5% MAX

Drain to Source On-Resistance

Variation vs Gate to Source Voltage

Figure 5.

110100

0.1

1

10

100

1000

LIMITED

BY PACKAGE

10us

100us

1ms

10ms

ID, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

OPERATION IN THIS

AREA MAY BE

LIMITED BY rDS(on)

SINGLE PULSE

TJ = MAX RATED

TC = 25oCDC

4000

Forward Bias Safe Operating Area

0.01 0.1 1 10 100 1000

1

10

100

500

STARTING TJ = 150oC

STARTING TJ = 25oC

IAS, AVALANCHE CURRENT (A)

tAV, TIME IN AVALANCHE (ms)

5000

t

AV

= (L)(I

AS

)/(1.3*RATED BV

DSS

- V

DD

)

If R = 0

If R

≠

0

t

AV

= (L/R)ln[(I

AS

*R)/(1.3*RATED BV

DSS

- V

DD

) +1]

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

Figure 7.

2.02.

53.03.54.04.55.0

0

40

80

120

160

TJ = -55oC

TJ = 25oC

TJ = 175oC

PULSE DURATION = 80μs

DUTY CYCLE = 0.5% MAX

VDD = 5V

ID, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

Transfer Characteristics Figure 8.

01234

0

40

80

120

160

ID, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80μs

DUTY CYCLE = 0.5% MAX

VGS = 10V

VGS = 5V

VGS = 4.5V

VGS = 3.5V

VGS = 4V

Saturation Characteristics

Figure 9.

3456789

10

0

10

20

30

40

50

rDS(on), DRAIN TO SOURCE

ON-RESISTANCE (mΩ)

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 25oC

TJ = 175oC

PULSE DURATION = 80μs

DUTY CYCLE = 0.5% MAX

Drain to Source On-Resistance

Variation vs Gate to Source Voltage

Figure 10.

-80 -40 0 40 80 120 160 200

0.6

0.8

1.0

1.2

1.4

1.6

1.8

TJ, JUNCTION TEMPERATURE(oC)

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

ID = 80A

VGS = 10V

PULSE DURATION = 80μs

DUTY CYCLE = 0.5% MAX

Normalized Drain to Source On

Resistance vs Junction Temperature

FTCO3V455A1 Rev. 1.1

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FTCO3V455A1 3-Phase Inverter Automotive Power Module

Typical Characteristics (Generated using MOSFETs assembled in a TO263 package, for reference purposes only)

Figure 5.

110100

0.1

1

10

100

1000

LIMITED

BY PACKAGE

10us

100us

1ms

10ms

ID, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

OPERATION IN THIS

AREA MAY BE

LIMITED BY rDS(on)

SINGLE PULSE

TJ = MAX RATED

TC = 25oCDC

4000

Forward Bias Safe Operating Area

0.01 0.1 1 10 100 1000

1

10

100

500

STARTING TJ = 150oC

STARTING TJ = 25oC

IAS, AVALANCHE CURRENT (A)

tAV, TIME IN AVALANCHE (ms)

5000

t

AV

= (L)(I

AS

)/(1.3*RATED BV

DSS

- V

DD

)

If R = 0

If R

≠

0

t

AV

= (L/R)ln[(I

AS

*R)/(1.3*RATED BV

DSS

- V

DD

) +1]

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

Figure 7.

2.02

.53.03.54.04.55.0

0

40

80

120

160

TJ = -55oC

TJ = 25oC

TJ = 175oC

PULSE DURATION = 80μs

DUTY CYCLE = 0.5% MAX

VDD = 5V

ID, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

Transfer Characteristics Figure 8.

01234

0

40

80

120

160

ID, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80μs

DUTY CYCLE = 0.5% MAX

VGS = 10V

VGS = 5V

VGS = 4.5V

VGS = 3.5V

VGS = 4V

Saturation Characteristics

Figure 9.

345678910

0

10

20

30

40

50

rDS(on), DRAIN TO SOURCE

ON-RESISTANCE (mΩ)

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 25oC

TJ = 175oC

PULSE DURATION = 80μs

DUTY CYCLE = 0.5% MAX

Drain to Source On-Resistance

Variation vs Gate to Source Voltage

Figure 10.

-80 -40 0 40 80 120 160 200

0.6

0.8

1.0

1.2

1.4

1.6

1.8

TJ, JUNCTION TEMPERATURE(oC)

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

ID = 80A

VGS = 10V

PULSE DURATION = 80μs

DUTY CYCLE = 0.5% MAX

Normalized Drain to Source On

Resistance vs Junction Temperature

Figure 9.

3456789

1

0

10

20

30

40

50

rDS(on), DRAIN TO SOURCE

ON-RESISTANCE (mΩ)

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 25oC

TJ = 175oC

PULSE DURATION = 80μs

DUTY CYCLE = 0.5% MAX

Drain to Source On-Resistance

Variation vs Gate to Source Voltage

Figure 11.

-80 -40 0 40 80 120 160 200

0.4

0.6

0.8

1.0

1.2

NORMALIZED GATE

THRESHOLD VOLTAGE

TJ, JUNCTION TEMPERATURE(oC)

VGS = VDS

ID = 250μA

Normalized Gate Threshold Voltage vs

Junction Temperature

Figure 12. Normalized Drain to Source

Breakdown Voltage vs Junction Temperature

-80 -40 0 40 80 120 160 200

0.90

0.95

1.00

1.05

1.10

1.15

TJ, JUNCTION TEMPERATURE (oC)

NORMALIZED DRAIN TO SOURCE

BREAKDOWN VOLTAGE

ID = 250μA

Figure 13.

0.1 1 10

100

1000

10000

f = 1MHz

VGS = 0V

Crss

Coss

Ciss

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

50

40000

Capacitance vs Drain to Source

Voltage

Figure 14.

0 50 100 150 200 250

0

2

4

6

8

10

ID = 80A

VDD = 20V

VDD = 15V

VDD = 25V

VGS, GATE TO SOURCE VOLTAGE(V)

Qg, GATE CHARGE(nC)

Gate Charge vs Gate to Source Voltage

FTCO3V455A1 Rev. 1.1

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FTCO3V455A1 3-Phase Inverter Automotive Power Module

Mechanical Characteristics and Ratings

Fig. 15. Flatness Measurement Position

Package Marking and Ordering Information

Parameter ConditionLimits Unit

Min. Typ. Max.

Device Flatness Note Fig.15 0 - +200 um

Weight

Devi

FTC Tube 11

1

- - g

20

Mounting Torque Mounting Screw: - M3, Recommended 0.7N.m 0.6 0.7 0.8 N.m

QuantityPacking Type

ce Marking MOSFET

PCF33478O3V455A1

FTCO3V455A1 Rev. 1.1

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FTCO3V455A1 3-Phase Inverter Automotive Power Module

Detailed Package Outline Drawings

Figure 16.

VBAT SENSE

GATE LS U

GATE HS U

PHASE U SENSE

GATE HS V

PHASE V SENSE

GATE LS V

TEMP 2

TEMP 1

GATE LS W

GATE HS W

PHASE W SENSE

SHUNT N

SHUNT P

VBAT GNDPHASE U PHASE V PHASE W

FTCO3V455A1 Rev. 1.1 www.fairchildsemi.com

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FTCO3V455A1 3-Phase Inverter Automotive Power Module

Detailed Package Outline Drawings

Figure 17.

FTCO3V455A1 Rev. 1.1

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FTCO3V455A1 Rev. 1.1

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FTCO3V455A1 3-Phase Inverter Automotive Power Module

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1

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ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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