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Surface Mount Barrier Diodes: BAS40W/-04/-05/-06
Features:
tLow turn-on voltage
tFast switching
tUltra-small surface mount package
tPN Junction guard ring for transient and ESD protection
Applications:
tGeneral purpose switching applications
Characteristic: Symbol: Limits: Unit:
Peak repetitive reverse voltage
Working peak reverse voltage
Diode reverse voltage
VRRM
VRWM
VR
40 V
Forward continuous current IF200 mA
Non-repetitive peak forward surge current @ t=1μs IFS 600 mA
Power dissipation PD200 mW
Junction temperature TJ150 oC
Storage temperature range Tstg -65 to +150 oC
Characteristic: Symbol: Min Max Unit: Test Condition:
Reverse Breakdown Voltage V(BR)R 40 - V IR = 10 A
Forward voltage VF- 380
- 1000
mV IF=1.0mA ,tp<300μs
IF=40mA,tp<300μs
Reverse leakage current IR- 200 nA tP<300μs, VR=30V
Diode capacitance CD- 5 pF VR=0V,f=1.0MHz
Reverse recovery time trr - 5 ns IF=IR=10mA
RL=100 Ohms
Maximum Rating @ Ta=25oC
Electrical Characteristics @ Ta=25oC
BAS40W BAS40-04
BAS40W-05 BAS40W-06
SOT-323
BAS40W
BAS40W-05
BAS40W-04
BAS40W-06