wa -THOMSON Sl SS-THOMSON BD157/8/9 LOW POWER FAST SWITCHING DESCRIPTION The BD157, BD158 and BD159 are silicon epitaxial planar NPN transistors in TO-126 plastic package, intended for applications in low power linear and switching. ABSOLUTE MAXIMUM RATINGS TO-126 (SOT-32) INTERNAL SCHEMATIC DIAGRAM Value _d . Symbol Parameter BD157]Bp158|BD159 Unit Vcso Collector-base Voltage (l_ = 0) 275 325 375 Vv VcEO Collector-emitter Voltage (Ip = 0) 250 300 350 v Vepo Emitter-base Voltage (Ic = 0) 5 Vv le Collector Current 05 A lom Collector Peak Current 1 A Ip Base Current 0.25 A Prot Total Power Dissipation at Tcase < 25 C 20 Ww Tstg Storage Temperature 65 to 150 C Tj Junction Temperature 150 C December 1988 1/2 144BD157-BD158-BD159 THERMAL DATA Rin j-case | Thermal Resistance Junction-case Max | 6.25 | C/W ELECTRICAL CHARACTERISTICS (Tease = 25 C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit | tcBo Collector Cutoff Current Vor = fated Vero 400 WA (le = 0) lepo Emitter Cutoff Current Vea <5 V 400 A (lc = 9) Vcoeo* | Collector-emitter Voltage lo =1mMA for BD157 250 V for BD158 300 Vv for BD159 350 Vv Nre* DC Current Gain Io =50 mA Voce =10V 30 240 * Pulsed : pulse duration = 300 ps, duty cycle = 1.5 %. 2fe 142 GS- Ayf SiSchacnoae: