VS-85EPF12 Soft Recovery Series
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Revision: 17-Jun-11 1Document Number: 93159
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Fast Soft Recovery Rectifier Diode, 85 A
FEATURES
150 °C max. operating junction temperature
Output rectification and freewheeling in
inverters, choppers and converters
Input rectifications where severe restrictions
on conducted EMI should be met
Screw mounting only
Designed and qualified according to JEDEC-JESD47
PowerTab® package
Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The VS-85EPF12 fast soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
Available in the new PowerTab® package, this new series is
suitable for a large range of applications combining
excellent die to footprint ratio and sturdeness connectivity
for use in high current environments.
PRODUCT SUMMARY
Package PowerTab®
IF(AV) 85 A
VR1200 V
VF at IF1.36 V
IFSM 110 A
trr 95 ns
TJ max. 150 °C
Diode variation Single die
Snap factor 0.5
Cathode Anode
PowerTab
®
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rect. conduction 50 % duty cycle at TC = 85 °C 85 A
IF(RMS) 160
VRRM Range 1200 V
IFSM 110 A
VF100 A, TJ = 25 °C 1.4 V
trr 1 A, - 100 A/μs 95 ns
TJRange - 40 to 150 °C
VOLTAGE RATINGS
TYPE NUMBER
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
VS-85EPF12 1200 1300 15
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV) TC = 85 °C, 180° conduction half sine wave 85
A
Maximum peak one cycle
non-repetitive surge current IFSM
10 ms sine pulse, rated VRRM applied 1100
10 ms sine pulse, no voltage reapplied 1250
Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied 5000 A2s
10 ms sine pulse, no voltage reapplied 7000
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 70 000 A2s
VS-85EPF12 Soft Recovery Series
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Revision: 17-Jun-11 2Document Number: 93159
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ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop VFM 85 A, TJ = 25 °C 1.36 V
Forward slope resistance rtTJ = 150 °C 4.03 m
Threshold voltage VF(TO) 0.87 V
Maximum reverse leakage current IRM
TJ = 25 °C VR = Rated VRRM 0.1 mA
TJ = 150 °C 15
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time trr IF at 85 Apk
25 A/μs
25 °C
480 ns
Reverse recovery current Irr 7.1 A
Reverse recovery charge Qrr 2.1 μC
Snap factor S 0.5
IFM trr
dir
dt
IRM(REC)
Qrr
t
tatb
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg - 40 to 150 °C
Maximum thermal resistance,
junction to case RthJC DC operation 0.35
°C/W
Maximum thermal resistance,
junction to ambient RthJA 40
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 0.2
Approximate weight 6g
0.21 oz.
Mounting torque minimum 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style PowerTab®85EPF12
VS-85EPF12 Soft Recovery Series
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Revision: 17-Jun-11 3Document Number: 93159
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Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
40302010 60 7050 80 90
0
110
140
130
150
70
90
100
120
80
93159_01
RthJC (DC) = 0.35 K/W
30°
60° 90°
120°
180°
Ø
Conduction angle
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
80604020 100 120 140
0
90
110
130
140
150
70
80
100
120
RthJC (DC) = 0.35 °C/W
30°
60°
90°
120°
180°
DC
93159_02
Conduction period
Ø
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
10 20 30 90
50 70
40 60 80
0
0
140
160
120
100
80
60
20
40
180°
120°
90°
60°
30°
RMS limit
TJ = 150 °C
93159_03
Ø
Conduction angle
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
20 40 60 140
100
80 120
0
0
160
200
120
180
140
100
80
60
20
40
93159_04
DC
180°
120°
90°
60°
30° RMS limit
TJ = 150 °C
Conduction period
Ø
Peak Half Sine Wave
Forward Current (A)
Number of Equal Amplitude Half
Cycle Current Pulses (N)
10 1001
300
500
700
1000
400
600
800
1100
900
1200
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
93159_05
Peak Half Sine Wave
Forward Current (A)
Pulse Train Duration (s)
0.1 10.01
300
500
700
1000
400
600
800
1200
1100
1300
900
1400
93159_06
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
VS-85EPF12 Soft Recovery Series
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Revision: 17-Jun-11 4Document Number: 93159
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Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
0 0.5 1.0 1.5 2.5 3.52.0 3.0 4.0 4.5
1
10
1000
100
TJ = 150 °C
TJ = 25 °C
93159_07
0.04
0.08
0.14
0.20
0.06
0.10
0.16
0.12
0.18
0.22
0
dI/dt - Rate of Fall of Forward Current (A/μs)
trr - Maximum Reverse
Recovery Time (μs)
2001601208040
TJ = 25 °C IFM = 1 A
IFM = 10 A
IFM = 20 A
IFM = 80 A
IFM = 125 A
IFM = 40 A
93159_08
0
0.2
0.5
0.1
0.3
0.4
0.6
0
dI/dt - Rate of Fall of Forward Current (A/μs)
trr - Maximum Reverse
Recovery Time (μs)
2001601208040
93159_09
IFM = 1 A
IFM = 10 A
IFM = 20 A
IFM = 80 A
IFM = 40 A
TJ = 150 °C
0
1.0
3.0
0.5
1.5
2.0
4.0
2.5
3.5
0
dI/dt - Rate of Fall of Forward Current (A/μs)
Qrr - Maximum Reverse
Recovery Charge (μC)
2001601208040
93159_10
TJ = 25 °C
IFM = 1 A
IFM = 10 A
IFM = 20 A
IFM = 125 A
IFM = 80 A
IFM = 40 A
0
4
12
2
6
8
14
10
0
dI/dt - Rate of Fall of Forward Current (A/μs)
Qrr - Maximum Reverse
Recovery Charge (μC)
2001601208040
93159_11
IFM = 1 A
IFM = 10 A
IFM = 20 A
IFM = 80 A
IFM = 40 A
TJ = 150 °C
0
8
18
4
12
6
2
10
14
22
16
20
0
dI/dt - Rate of Fall of Forward Current (A/μs)
Irr - Maximum Reverse
Recovery Current (A)
2001601208040
93159_12
TJ = 25 °C
IFM = 1 A
IFM = 10 A
IFM = 20 A
IFM = 125 A
IFM = 80 A
IFM = 40 A
VS-85EPF12 Soft Recovery Series
www.vishay.com Vishay Semiconductors
Revision: 17-Jun-11 5Document Number: 93159
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
Fig. 14 - Thermal Impedance ZthJC Characteristics
0
20
10
30
15
5
25
35
45
40
0
dI/dt - Rate of Fall of Forward Current (A/μs)
Irr - Maximum Reverse
Recovery Current (A)
2001601208040
93159_13
IFM = 1 A
IFM = 10 A
IFM = 20 A
IFM = 80 A
IFM = 40 A
TJ = 150 °C
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
ZthJC - Thermal Impedance (K/W)
93519_14
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
Steady state value
(DC operation)
VS-85EPF12 Soft Recovery Series
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Revision: 17-Jun-11 6Document Number: 93159
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ORDERING INFORMATION TABLE
1- Vishay Semiconductors product
2- Current rating
3- Circuit configuration:
E = Single diode
P = TO-247AC
4-Package:
5-Type of silicon:
F = Fast recovery
6- Voltage code x 100 = VRRM (12 = 1200 V)
Device code
51 32 4 6
VS- 85 E P F 12
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95240
Part marking information www.vishay.com/doc?95370
Application note www.vishay.com/doc?95179
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 03-Aug-11 1Document Number: 95240
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PowerTab®
DIMENSIONS in millimeters (inches)
15.90 (0.62)
15.60 (0.61)
4.20 (0.16)
4.00 (0.15)
4.95 (0.19)
4.75 (0.18)
5.20 (0.20)
4.95 (0.19)
18.25 (0.71)
18.00 (0.70)
27.65 (1.08)
27.25 (1.07)
39.8 (1.56)
39.6 (1.55)
12.40 (0.48)
12.10 (0.47)
8.45 (0.33)
8.20 (0.32)
15.60 (0.61)
14.80 (0.58)
5.45 REF.
(0.21 REF.)
1.30 (0.05)
1.10 (0.04)
3.09 (0.12)
3.00 (0.11)
1.35 (0.05)
1.20 (0.04)
0.60 (0.02)
0.40 (0.01) 12.20 (0.48)
12.00 (0.47)
Ø 4.20 (Ø 0.16)
Ø 4.00 (Ø 0.15)
Ø 4.20 (Ø 0.16)
Ø 4.00 (Ø 0.15)
Lead 1
Lead 2
Lead assignments
Lead 1 = Cathode
Lead 2 = Anode
Legal Disclaimer Notice
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Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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