OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A.4 02/09
Page 1 of 5
Silicon Phototransistor and Photo Darlington
in Miniature 0805 SMD Package
OP500, OP501, OP500DA, OP501DA
Description:
Each of these devices consists of a NPN silicon phototransistor mounted in a miniature SMT package with a 0805
size chip carrier that is compatible with most automated mounting and position sensing equipment.
Both OP500, OP500DA and OP501, OP501DA have a flat lens. OP501 and OP501DA has an opaque lens that
shields the device from stray light, whereas OP500 and OP500DA has a water clear lens. All devices have a
wide viewing acceptance angle and higher collector current than devices without lenses especially on the
OP500DA and OP501 which incorporate photo darlington die instead on the standard transistor.
OP500, OP501, OP500DA and OP501DA are mechanically and spectrally matched to the OP200 serie s i nfrared
LEDs.
Features:
• High photo sensitivity
• Fast response time
• 0805 package size
• Phototransistor or Photo Darlington Output
• Choice of opaque or water clear flat lens
Applications:
• Non-contact position sensing
• Datum detection
• Machine automation
• Optical encoders
OP501,DA
OP500,DA
Ordering Information
Part Number Sensor Viewing Angle Lead Length
OP500 Phototransistor 150°
N/A
OP501
OP500DA Photo Darlington 150°
OP501DA
OP500, OP501, OP500DA, OP501DA
2
1
OP500
OP501 OP500DA
OP501DA
2
1
Pin # Transistor
1 Collector
2 Emitter
Recommended Solder Pad Patterns
COLLECTOR
SENSOR
DICE
RoHS Moisture
2a
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A.4 02/09
Page 2 of 5
Silicon Phototransistor and Photo Darlington
in Miniature 0805 SMD Package
OP500, OP501, OP500DA, OP501DA
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Storage Temperature Range -40o C to +100o C
Operating Temperature Range -25o C to +85o C
Lead Soldering Temperature(1) 260° C
Collector-Emitter Voltage
OP500, OP501
OP500DA, OP501DA
30 V
35 V
Emitter-Collector Voltage 5 V
Power Dissipation(2)
OP500, OP501
OP500DA, OP501DA
75 mW
100 mW
Collector Current
OP500, OP501
OP500DA, OP501DA
20 mA
32 mA
Notes:
1. Solder time less than 5 seconds at temperature extreme.
2. Derate linearly at 2.17 mW/° C above 25° C.
3. Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less
than 10% over the entire lens surface of the phototransistor being tested.
4. To calculate typical collector dark current in µA, use the formulate ICEO = 10(0.04 t - ¾), where TA is the ambient temperature in ° C.
Electrical Characteristics (TA = 25°C unless otherwise noted)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Input Diode
IC(ON)
On-State Collector Current
OP500, OP501
OP500DA, OP501DA
0.1
10.0
-
-
-
-
mA
VCE = 5.0 V, EE = 0.15 mW/cm2 (3)
VCE = 5.0 V, EE = 0.15 mW/cm2 (3)
VCE(SAT)
Collector-Emitter Saturation Voltage
OP500, OP501
OP500DA, OP501DA
-
-
-
-
0.3
1.0
V
IC = 100 µA, EE = 1.0 mW/cm2 (3)
IC = 1 mA, EE = 0.15 mW/cm2 (3)
ICEO Collector-Emitter Dark Current - - 100 nA VCC= 5.0 V (4)
VBR(CEO)
Collector-Emitter Breakdown Voltage
OP500, OP501
OP500DA, OP501DA
30
35 - - V IC= 100 µA, EE = 0
VBR(ECO)
Emitter-Collector Breakdown Voltage
OP500, OP501
OP500DA, OP501DA
5
5
-
-
-
-
V
IE= 100 µA, EE = 0
IC= 100 µA, EE = 0
tr, tf
Rise and Fall Times
OP500, OP501
OP500DA, OP501DA
- 15
50
-
60 µs
IC= 1 mA, RL = 1KΩ
IC= 1 mA, RL = 1KΩ
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A.4 02/09
Page 3 of 5
Silicon Phototransistor and Photo Darlington
in Miniature 0805 SMD Package
OP500, OP501, OP500DA, OP501DA
OP500, OP501
900 1100 1000
0%
20%
40%
60%
80%
100%
Relative Response
Wavelength (nm)
Relative Response vs. Wavelength
800 700 600 500 400
OP501,
OP501DA
OP500,
OP500DA
-25 0 25
Temperature—(°C)
Collector-Emitter Dark Current (nA)
10
1000
1
50 75 100
0
100
Conditions: Ee = 0 mW/cm2
VCE = 10V
IC(ON) - On-State Collector Current (mA)
0 1 2 3 4 5
Collector-Emitter Voltage (V)
0.40
0.60
0.80
1.00
1.20
0.20
1.40
1.60
1.80
2.00
3 mW/cm2
2.5 mW/cm2
2 mW/cm2
1.5 mW/cm2
1.0 mW/cm2
0.5 mW/cm2
Relative On-State Collector Current –
Ic (mA)
vs. Collector-Emitter Voltage—VCE (V)
Collector-Emitter Dark Current
vs. Temperature-TA
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A.4 02/09
Page 4 of 5
Silicon Phototransistor and Photo Darlington
in Miniature 0805 SMD Package
OP500, OP501, OP500DA, OP501DA
OP500, OP501
Relative Collector Current
Relative On-State Collector Current
vs. Irradiance—Ee (mW/cm2)
0 1.0 2.0 3.0 4.0
Ee—Irradiance (mW/cm2)
Relative Collector Current
80%
100%
120%
140%
160%
Relative On-State Collector Current-IC (mA)
vs. Temperature-TA
-25 0 25 50 75 100
Temperature—(°C)
60%
40%
5.0 6.0 7.0
90%
100%
110%
120%
130%
80%
70%
140%
8.0
20%
Normalized at Ee = 5mW/cm2
Conditions: VCE = 5V,
λ = 935nm, TA = 25 °C
Normalized at TA = 25°C .
Conditions: VCE = 5V,
λ = 935nm, TA = 25 °C
OP500DA, OP501DA
Collector-Emitter Dark Current
vs. Temperature-TA
-25 0 25
Temperature—(°C)
Collector-Emitter Dark Current (nA)
10
1000
1
50 75 100
0
100
Conditions: Ee = 0 mW/cm2
VCE = 10V
IC(ON) - On-State Collector Current (mA)
Relative On-State Collector Current –
Ic (mA)
vs. Collector-Emitter Voltage—VCE (V)
0 0.5 1.0 1.5 2.5 3
Collector-Emitter Voltage (V)
12.5
15.0
17.5
20
25
10.0
30 1.2 mW/cm2
1.0 mW/cm2
0.8 mW/cm2
0.6 mW/cm2
0.4 mW/cm2
0.2 mW/cm2
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A.4 02/09
Page 5 of 5
Silicon Phototransistor and Photo Darlington
in Miniature 0805 SMD Package
OP500, OP501, OP500DA, OP501DA
Relative Collector Current—%
0 0.50 1.0
Irradiance- Ee(mW/cm2)
Relative Collector Current—%
100%
120%
140%
160%
-25 0 25 50 75 100
Temperature—(°C)
80%
60%
1.5
90%
100%
110%
120%
130%
80%
70%
140%
2.0
40%
Normalized at Ee = 1mW/cm2
Conditions: VCE = 5V,
λ = 935nm, TA = 25 °C
Normalized at TA = 25°C .
Conditions: VCE = 5V,
OP500DA, OP501DA
Relative On-State Collector Current
vs. Irradiance—Ee (mW/cm2) Relative On-State Collector Current-IC (mA)
vs. Temperature-TA
