DIM200PHM33-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10
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FEATURES
■10µs Short Circuit Withstand
■High Thermal Cycling Capability
■Non Punch Through Silicon
■Isolated MMC Base with AlN Substrates
APPLICATIONS
■High Reliability Inverters
■Motor Controllers
■Traction Drives
The Powerline range of high power modules includes half
bridge, chopper, dual and single switch configurations covering
voltages from 600V to 3300V and currents up to 2400A.
The DIM200PHM33-A000 is a half bridge 3300V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand. This device is
optimised for traction drives and other applications requiring high
thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM200PHM33-A000
Note: When ordering, please use the whole part number.
KEY PARAMETERS
VCES 3300V
VCE(sat) (typ) 3.2V
IC(max) 200A
IC(PK) (max) 400A
DIM200PHM33-A000
Half Bridge IGBT Module
Preliminary Information
Replaces August 2001, version DS5464-3.0 DS5464-4.0 October 2001
Fig. 1 Half bridge circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code: P
(See package details for further information)
3(E2)
2(C1)
1(E1/C2)
7(E
2)
6(G
2)
8(C
1)
5(E
1)
4(G
1)
DIM200PHM33-A000
2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Test Conditions
VGE = 0V
-
Tcase = 80˚C
1ms, Tcase = 115˚C
Tcase = 25˚C, Tj = 150˚C
VR = 0, tp = 10ms, Tvj = 125˚C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V1 = 2450V, V2 = 1800V, 50Hz RMS
Symbol
VCES
VGES
IC
IC(PK)
Pmax
I2t
Visol
QPD
Units
V
V
A
A
W
kA2s
V
pC
Max.
3300
±20
200
400
2315
20
6000
10
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I2t value (Diode arm)
Isolation voltage - per module
Partial discharge - per module
DIM200PHM33-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10
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THERMAL AND MECHANICAL RATINGS
Internal insulation material: AlN
Baseplate material: AlSiC
Creepage distance: 33mm
Clearance: 20mm
CTI (Critical Tracking Index): 175
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M5
Parameter
Thermal resistance - transistor (per switch)
Thermal resistance - diode (per switch)
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-h)
Tj
Tstg
-
Units
˚C/kW
˚C/kW
˚C/kW
˚C
˚C
˚C
Nm
Nm
Max.
54
108
16
150
125
125
5
4
Typ.
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
–40
-
-
DIM200PHM33-A000
4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Test Conditions
VGE = 0V, VCE = VCES
VGE = 0V, VCE = VCES, Tcase = 125˚C
VGE = ±20V, VCE = 0V
IC =20mA, VGE = VCE
VGE = 15V, IC = 200A
VGE = 15V, IC = 200A, , Tcase = 125˚C
DC
tp = 1ms
IF = 200A
IF = 200A, Tcase = 125˚C
VCE = 25V, VGE = 0V, f = 1MHz
VCE = 25V, VGE = 0V, f = 1MHz
-
-
T
j
= 125˚C, V
CC
= 2500V,
I1
t
p
≤ 10µs,
V
CE(max)
= V
CES
– L*. di/dt
I2
IEC 60747-9
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Reverse transfer capacitance
Module inductance - per switch
Internal transistor resistance - per switch
Short circuit. ISC
Symbol
ICES
IGES
VGE(TH)
VCE(sat)
IF
IFM
VF
Cies
Cres
LM
RINT
SCData
Units
mA
mA
µA
V
V
V
A
A
V
V
nF
nF
nH
mΩ
A
A
Max.
1
15
2
6.5
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
5.5
3.2
4.0
200
400
2.5
2.5
45
2.5
30
0.54
1300
1100
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
-
-
-
-
Note:
L* is the circuit inductance + LM
DIM200PHM33-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/10
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Units
ns
ns
mJ
ns
ns
mJ
µC
µC
A
mJ
Max.
-
-
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
-
-
-
-
-
Test Conditions
IC = 200A
VGE = ±15V
VCE = 1800V
RG(ON) = RG(OFF) =10Ω
Cge = 33nF
L ~ 100nH
IF = 200A, VR = 1800V,
dIF/dt = 1100A/µs
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Symbol
td(off)
tf
EOFF
td(on)
tr
EON
Qg
Qrr
Irr
EREC
Tcase = 125˚C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
µC
A
mJ
Max.
-
-
-
-
-
-
-
-
-
Typ.
1600
250
240
640
300
420
190
185
220
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
IC = 200A
VGE = ±15V
VCE = 1800V
RG(ON) = RG(OFF) =10Ω
Cge = 33nF
L ~ 100nH
IF = 200A, VR = 1800V,
dIF/dt = 1000A/µs
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
td(off)
tf
EOFF
td(on)
tr
EON
Qrr
Irr
EREC
Typ.
1300
200
170
640
250
290
6
115
165
130
DIM200PHM33-A000
6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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TYPICAL CHARACTERISTICS
Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current Fig. 6 Typical switching energy vs gate resistance
0
100
200
300
400
0123456
Collector-emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
Common emitter.
T
case
= 25˚C
V
GE
= 20V
15V
12V
10V
0
100
200
300
400
12345678
Collector-emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
Common emitter.
T
case
= 125˚C
V
GE
= 20V
15V
12V
10V
0
100
200
300
400
500
0 50 100 150 200
Collector current, I
C
- (A)
Switching energy, E
sw
- (mJ)
E
on
E
off
E
rec
Conditions:
T
c
= 125°C,
R
g
= 10 Ohms,
V
cc
= 1800V,
C
ge
= 33nF
0
100
200
300
400
500
600
700
5 1015202530
Gate resistance, R
g
- (Ohms)
Switching energy, Esw - (mJ)
E
on
E
off
E
rec
Conditions:
T
c
= 125°C
I
C
= 200A
V
cc
= 1800V
C
ge
= 33nF
DIM200PHM33-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/10
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Fig. 7 Diode typical forward characteristics Fig. 8 Reverse bias safe operating area
Fig. 9 Diode reverse bias safe operating area Fig. 10 Forward bias safe operating area
0
50
100
150
200
250
300
350
400
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Forward voltage, V
F
- (V)
Forward current, I
F
- (A)
T
j
= 25˚C
T
j
= 125˚C
0.1
1
10
100
1000
1 10 100 1000 10000
Collector emitter voltage, V
ce
(V)
Collector current, I
C
- (A)
T
vj
= 125˚C, T
c
= 80˚C
I
C(max)
DC
t
p
= 1 ms
t
p
= 100µs
t
p
= 50µs
0
100
200
300
400
500
0 500 1000 1500 2000 2500 3000 3500
Collector emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
T
case
= 125˚C
V
ge
= ±15V
R
g(min)
= 10Ω
Module
Chip
0
50
100
150
200
250
300
350
400
0 500 1000 1500 2000 2500 3000 3500
Reverse voltage, V
R
- (V)
Reverse recovery current, I
rr
- (A)
T
j
= 125˚C
DIM200PHM33-A000
8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Fig. 11 Transient thermal impedance Fig. 12 DC current rating vs case temperature
1
10
100
1000
0.001 0.01 10.1 10
Pulse width, t
p
- (s)
Transient thermal impedance, Z
th (j-c)
- (°C/kW )
IGBT R
i
(˚C/KW)
τ
i
(ms)
Diode R
i
(˚C/KW)
τ
i
(ms)
1
1.4989
0.0876
2.9545
0.0843
2
7.8608
3.7713
15.6459
3.7205
3
11.1109
33.5693
22.2515
33.2138
4
33.6178
236.8023
67.3233
236.5275
Diode
Transistor
0
50
100
150
200
250
300
350
020406080100120140160
Case temperature, T
case
- (˚C)
DC collector current, I
C
- (A)
DIM200PHM33-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 9/10
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PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.
Nominal weight: 750g
Module outline type code: P
DIM200PHM33-A000
10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 502901 / 502753. Fax: +44 (0)1522 500020
SALES OFFICES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 502901 / 502753. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS5464-4 Issue No. 4.0 August 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
