VOIDLESS-HERMETICALLY-SEALED
SURFACE MOUNT STANDARD
RE
CO
VERY
G
LA
SS
RE
C
TIFIER
S
SCOTTSDALE DIVISION
1N5614US thru 1N5622US
WWW.Microsemi .COM 1N5614US – 1N5622US
DESCRIPTION APPEARANCE
This “standard recovery” surface mount rectifier diode series is military qualified to
MIL-PRF-19500/427 and is ideal for high-reliability applications where a failure
cannot be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working
peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-
glass construction using an internal “Category I” metallurgical bond. These devices
are also available in axial-leaded thru-hole package configurations (see separate
data sheet for 1N5614 thru 1N5622). Microsemi also offers numerous other rectifier
products to meet higher and lower current ratings with various recovery time speed
requirements including fast and ultrafast device types in both through-hole and
surface mount packages.
Package “A”
or D-5A
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES APPLICATIONS / BENEFITS
• Surface mount package series equivalent to the
JEDEC registered 1N5614 to 1N5622 series
• Voidless hermetically sealed glass package
• Triple-Layer Passivation
• Internal “Category I” Metallurgical bonds
• Working Peak Reverse Voltage 200 to 1000 Volts.
• JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/427
• Axial-leaded equivalents also available (see separate
data sheet for 1N5614 thru 1N5622)
• Standard recovery 1 Amp rectifiers 200 to 1000 V
• Military and other high-reliability applications
• General rectifier applications including bridges, half-
bridges, catch diodes, etc.
• High forward surge current capability
• Extremely robust construction
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS MECHANICAL AND PACKAGING
• Junction & Storage Temperature: -65oC to +200oC
• Thermal Resistance: 7oC/W junction to end cap
• Thermal Impedance: 4.5oC/W @ 10 ms heating time
• Average Rectified Forward Current (IO): 1.0 Amps @
TA = 55ºC and 0.75 Amps @ TA = 100ºC
• Forward Surge Current: 30 Amps @ 8.3 ms half-sine
• Solder Temperatures: 260ºC for 10 s (maximum)
• CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
• TERMINALS: End caps are solid Silver with
Tin/Lead (Sn/Pb) finish
• MARKING & POLARITY: Cathode band only
• TAPE & REEL option: Standard per EIA-481-B
• WEIGHT: 193 mg
• See package dimensions and recommended pad
layout on last page
ELECTRICAL CHARACTERISTICS
TYPE
WORKING
PEAK
REVERSE
VOLTAGE VRWM
MINIMUM
BREAKDOWN
VOLTAGE
VBR @ 50µA
AVERAGE
RECTIFIED
CURRENT
IO @ TA
(NOTE 1)
FORWARD
VOLTAGE
(MAX.)
VF @ 3A
REVERSE
CURRENT
(MAX.)
IR @ VRWM
MAXIMUM
SURGE
CURRENT
IFSM
(NOTE 2)
REVERSE
RECOVERY
(NOTE 3)
trr
VOLTS VOLTS AMPS VOLTS
µA AMPS µs
55oC 100oC 25oC 100oC
1N5614US
1N5616US
1N5618US
1N5620US
1N5622US
200
400
600
800
1000
220
440
660
880
1100
1.00
1.00
1.00
1.00
1.00
.750
.750
.750
.750
.750
0.8 MIN.
1.3 MAX.
0.5
0.5
0.5
0.5
0.5
25
25
25
25
25
30
30
30
30
30
2.0
2.0
2.0
2.0
2.0
NOTE 1: From 1 Amp at TA = 55oC, derate linearly at 5.56 mA/ oC to 0.75 Amp at TA = 100oC. From TA = 100oC,
derate linearly at 7.5 mA/oC to 0 Amps at TA = 200 oC. These ambient ratings are for PC boards where thermal
resistance from mounting point to ambient is sufficiently controlled where TJ(max) does not exceed 175 oC.
NOTE 2: TA = 100 oC, f = 60 Hz, IO = 750 mA for ten 8.3 ms surges @ 1 minute intervals
NOTE 3: IF = 0.5A, IRM = 1A, IR(REC) = 0.250A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright 2004
9-14-2004 REV A
VOIDLESS-HERMETICALLY-SEALED
SURFACE MOUNT STANDARD
RE
CO
VERY
G
LA
SS
RE
C
TIFIER
S
SCOTTSDALE DIVISION
1N5614US thru 1N5622US
WWW.Microsemi .COM 1N5614US – 1N5622US
SYMBOLS & DEFINITIONS
Symbol Definition
VBR Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VRWM Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
VF Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
IR Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
C Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage
trr
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified decay point after a peak reverse
current occurs.
GRAPHS
FIGURE 1 FIGURE 2
TYPICAL FORWARD VOLTAGE vs FORWARD CURRENT TYPICAL REVERSE CURRENT vs PIV
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright 2004
9-14-2004 REV A
VOIDLESS-HERMETICALLY-SEALED
SURFACE MOUNT STANDARD
RE
CO
VERY
G
LA
SS
RE
C
TIFIER
S
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
Copyright 2004
9-14-2004 REV A
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N5614US thru 1N5622US
1N5614US – 1N5622US
PACKAGE DIMENSIONS AND PAD LAYOUT
NOTE: This Package Outline has also previously PAD LAYOUT
been identified as “D-5A” INCHES mm
A 0.246 6.25
B 0.067 1.70
C 0.105 2.67
Note: If mounting requires adhesive
separate from the solder, an additional
0.060 inch diameter contact may be
placed in the center between the pads
as an optional spot for cement.
INCHES mm
MIN MAX MIN MAX
BD .097 .103 2.46 2.62
BL .185 .200 4.70 5.08
ECT .019 .028 0.48 0.71
S .003 --- 0.08 ---
