NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM033C08 EM033C08 Low Power 32Kx8 SRAM Overview Features The EM033C08 is an integrated memory device containing a low power 256 Kbit Static Random Access Memory organized as 32,768 words by 8 bits. The device is fabricated using an advanced CMOS process and NanoAmp's high-speed/lowpower circuit technology. This device is designed to be quite effective in battery powered products with it's very low operating and standby currents. It is also capable of full operation at voltages as low as 1.5 volts. The device pinout is fully compatible with NanoAmp's EM02R2XX family of Combination RAM and ROM products making it very easy to substitute an SRAM only device where the ROM is unneccessary in the application. This device is extremely stable over broad temperature and voltage ranges. * Extended Operating Voltage Range 1.5 to 3.6 V * Very Low Standby Voltage 1.2 V * Extended Temperature Range -20o to +80oC * Fast Cycle Time 100 ns (@ 2.7V) * Very Low Operating Current ICC < 1 mA typical at 3V, 1 Mhz * Very Low Standby Current ISB = 100 nA typical * Available in 32-pin STSOP package FIGURE 1: Pin Configuration TABLE 1: Pin Descriptions A11 A9 A8 A13 A14 VSS CE VCC WE VSS VSS A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 EM033C08 STSOP OE A10 VCC D7 D6 D5 D4 D3 VSS D2 D1 D0 A0 A1 A2 A3 Pin Name Pin Function A0-A14 Address Inputs D0-D7 Data Inputs/Outputs CE Chip Enable (Active Low) OE Output Enable (Active Low) WE Write Enable (Active Low) V CC Power V SS Ground FIGURE 1: Operating Envelope 8 Mhz Typical ICC (mA) 8 6 5 Mhz 4 2.5 Mhz 2 1 Mhz 0 0 1 2 3 4 VCC (V) Stock No. 23087-03 12/00 Subject to change without notice 1 NanoAmp Solutions, Inc. EM033C08 FIGURE 2: Functional Block Diagram Input/ Address Inputs A0 - A14 Address Output 32K x 8 Decode Mux RAM Array Logic Data I/O and Buffers D0 - D7 CE WE OE Control Logic FIGURE 3: Functional Description CE WE OE D0-D7 MODE POWER H L X H X H High Z High Z Standby Standby Standby Standby* L H L Data Out READ Active -> Standby* L L X Data In WRITE Active -> Standby* *The device will consume active power in this mode whenever addresses are changed TABLE 2: Absolute Maximum Ratings* Item Voltage on any pin relative to VSS Symbol Rating Unit VIN,OUT -0.3 to VCC +0.3 V Voltage on VCC Supply Relative to VSS VCC -0.3 to 4.6 V Power Dissipation PD 500 mW T STG -40 to +125 oC TA -20 to +80 oC Storage Temperature Operating Temperature - Extended Commercial *Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Stock No. 23087-03 12/00 Subject to change without notice 2 NanoAmp Solutions, Inc. EM033C08 TABLE 3: Operating Characteristics (Over specified temperature range) Item Symbol Test Conditions Min. Max. Unit 1.5 3.6 V 1.2 3.6 V Supply Voltage VCC Data Retention Voltage VDR Input High Voltage VIH 0.7V CC VCC +0.3 V Input Low Voltage VIL -0.3 0.3VCC V Output High Voltage VOH IOH = 200 A Output Low Voltage VO L I OL = -200 A 0.2 V Input Leakage Current ILI VIN = 0 to VCC 1 A Output Leakage Current ILO OE = VIH or CE = 1 1 A Operating Supply Current (Note 1) I CC VIN = V CC or 0V, CE = 0 0.3 * f * V mA Standby Current (Note 2) ISB VIN = V CC or 0V 10 A CE = VCC VCC-0.2 V Notes: Note 1. Operating current is a linear function of frequency and voltage. You may calculate operating current using the formula shown with operating frequency (f) expressed in Mhz and operating voltage (V) in volts. Example: Operating at 2 Mhz and 2.0 volts will draw a maximum current of 0.3*2*2 = 1.2 mA. Note 2. This device assumes a standby mode whenever Chip Enable (CE) is disabled (high). It will also automatically go into a standby mode whenever all input signals are quiescent (not toggling) whenever an access or write cycle is completed regardless of the state CE. In order to achieve low standby current all input levels must be within 0.2 volts of either V CC or GND. TABLE 4: Capacitance* Item Symbol Test Condition Min Max Unit Input Capacitance CIN VIN = 0V, f = 1 Mhz, TA = 25 C 5 pF I/O Capacitance CI/O VIN = 0V, f = 1 Mhz, TA = 25oC 5 pF o Note: These parameters are verified in device characterization and are not 100% tested TABLE 5: Timing Test Conditions Item Input Pulse Level 0.1VCC to 0.9 VCC Input Rise and Fall Time Input and Output Timing Reference Levels Output Load CL = 30pF Operating Temperature (Unless otherwise stated) Stock No. 23087-03 12/00 5ns 0.5V CC Subject to change without notice -20 to +80 oC 3 NanoAmp Solutions, Inc. EM033C08 TABLE 6: Timing Item Symbol Min/Max 1.5V 1.8V 2.4V 2.7-3.6V Units Read Cycle Time tRC Min 750 250 150 100 ns Address Access Time tA A Max 750 250 150 100 ns Chip Enable Access Time tCE Max 750 250 150 100 ns Output Enable to Valid Output tOE Max 250 70 50 30 ns Chip Enable to Low-Z output tLZ Min 0 0 0 0 ns Output Enable to Low-Z Output t OLZ Min 0 0 0 0 ns Chip Enable to High-Z Output t HZ Min 0 0 0 0 Max Min 100 0 50 0 40 0 25 0 Max 100 50 40 25 ns Output Disable to High-Z Output t OHZ Output Hold from Address Change t OH Min 40 20 15 10 ns Write Cycle Time tWC Min 750 250 150 100 ns Chip Enable to End of Write tCW Min 750 250 150 100 ns Address Valid to End of Write tAW Min 750 250 150 100 ns Address Set-Up Time tA S Min 0 0 0 0 ns Write Pulse Width tWP Min 400 150 75 50 ns Write Recovery Time tWR Min 0 0 0 0 ns Write to High-Z Output tWHZ Min Max 0 150 0 70 0 50 0 30 ns Data to Write Time Overlap tDW Min 400 150 75 50 ns Data Hold from Write Time tDH Min 75 35 20 15 ns End Write to Low-Z Output t OW Min 40 20 15 10 ns ns FIGURE 4: Read Cycle Timing (WE = VIH ) tRC A0-A14 tAA CE tCS tOE OE tOLZ tLZ D0-D7 Stock No. 23087-03 12/00 tHZ tOHZ tOH Data Valid Subject to change without notice 4 NanoAmp Solutions, Inc. EM033C08 FIGURE 5: Write Cycle Timing (OE fixed) tWC A0-A14 tWR tAW tCW CE tAS tOH tWP WE tDH tDW Data Valid Data In tOW tWHZ High-Z Data Out FIGURE 6: Write Cycle Timing (OE clock) tWC A0-A14 tW R OE tA W tCW CE tW P WE tWHZ tAS tDW tDH Data Data In tOHZ tO W High-Z Data Out Stock No. 23087-03 12/00 Subject to change without notice 5 NanoAmp Solutions, Inc. EM033C08 TABLE 7: Ordering Information Part Number* Package Temperature Range Voltage Range Speed (@ 2.7V+) EM033C08N 32 pin STSOP -20 to +80 oC 1.5 to 3.6 V 100 ns * Please use this part number when ordering this product. This number will be marked on the device package. TABLE 8: Revision History Revision # Date 01 Dec 98 Initial Release 02 Oct 00 Tie pin 30 to Vcc 03 Dec 00 Tie pins 6, 10, 11 to Vss, eliminated TASC and TAHC Stock No. 23087-03 12/00 Change Description Subject to change without notice 6